Patents by Inventor Hiroaki Nakaoka
Hiroaki Nakaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030040132Abstract: A method for evaluating an insulating film includes: a first step of forming an insulating film on a semiconductor substrate including a p-n junction therein; a second step of selectively forming an electrode pattern on the insulating film; a third step of forming a measurement electrode on the insulating film so as to be electrically insulated from the electrode pattern; and a fourth step of applying a measurement voltage between the measurement electrode and the semiconductor substrate via the insulating film and measuring a leakage current leaking through the p-n junction so as to evaluate a damage to the insulating film or the semiconductor substrate.Type: ApplicationFiled: August 15, 2002Publication date: February 27, 2003Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Michinari Yamanaka, Takayuki Yamada, Hiroaki Nakaoka, Takeshi Yamashita
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Publication number: 20020058361Abstract: In a silicon layer formed on an insulator layer, a lattice defect region is formed to be adjacent to a channel region and source/drain regions, and the lower part of the channel region functions as a high-concentration channel region. The holes of hole-electron pairs generated in the channel region are eliminated by recombination in the lattice defect region, thereby suppressing the bipolar operation resulting from the accumulation of holes and increasing the source/drain breakdown voltage. The threshold value of a parasitic transistor is increased by the high-concentration channel region so as to reduce the leakage current in the OFF state. Alternatively, the holes may be moved to the source region to disappear therein by providing, instead of the lattice defect region, a high-concentration diffusion layer constituting and operating as a pn diode between the channel and source regions.Type: ApplicationFiled: December 28, 2001Publication date: May 16, 2002Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroaki Nakaoka, Hiromasa Fujimoto, Atsushi Hori, Takashi Uehara, Takehiro Hirai
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Patent number: 6337500Abstract: In a silicon layer formed on an insulator layer, a lattice defect region is formed to be adjacent to a channel region and source/drain regions, and the lower part of the channel region functions as a high-concentration channel region. The holes of hole-electron pairs generated in the channel region are eliminated by recombination in the lattice defect region, thereby suppressing the bipolar operation resulting from the accumulation of holes and increasing the source/drain breakdown voltage. The threshold value of a parasitic transistor is increased by the high-concentration channel region so as to reduce the leakage current in the OFF state. Alternatively, the holes may be moved to the source region to disappear therein by providing, instead of the lattice defect region, a high-concentration diffusion layer constituting and operating as a pn diode between the channel and source regions.Type: GrantFiled: June 18, 1998Date of Patent: January 8, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroaki Nakaoka, Hiromasa Fujimoto, Atsushi Hori, Takashi Uehara, Takehiro Hirai
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Publication number: 20010037939Abstract: A sample table for holding a silicon substrate into which an impurity is introduced is provided in the lower portion of a vacuum chamber. A high frequency power source is connected to the sample table through a coupling capacitor. The high frequency power source has a self-bias of 500 V, for example. Gas introducing means for introducing a sputtering gas such as an argon gas is provided on the bottom of the vacuum chamber. A solid target which contains an impurity which should be introduced, for example, boron is provided in the upper portion of the vacuum chamber.Type: ApplicationFiled: August 7, 1996Publication date: November 8, 2001Applicant: Hiroaki NakaokaInventors: HIROAKI NAKAOKA, BUNJI MIZUNO, MICHIHIKO TAKASE, ICHIROU NAKAYAMA
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Patent number: 6217951Abstract: An impurity solid including boron as impurity and a solid sample to which boron is introduced are held in a vacuum chamber. Ar gas is introduced into the vacuum chamber to generate plasma composed of the Ar gas. A voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the impurity solid and the impurity solid is sputtered by ions in the plasma, thereby mixing boron included in the impurity solid into the plasma composed of Ar gas. A voltage allowing the solid sample to serve as a cathode for the plasma is applied to the solid sample, and boron mixed into the plasma is introduced to the surface portion of the solid sample.Type: GrantFiled: October 21, 1996Date of Patent: April 17, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Bunji Mizuno, Hiroaki Nakaoka, Michihiko Takase, Ichiro Nakayama
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Patent number: 5851906Abstract: In order to dope impurities selectively at low temperature where the resist can be used, the invention presents an impurity doping method capable of performing not only cleaning process but also doping process at low temperature where the resist can be used. First, the active sample surface of a solid sample is exposed by irradiation with plasma, and without active irradiation with plasma, the gas or vapor containing object impurities is contacted with the active sample surface of the solid sample to dope the impurities. As a result, the impurity doping process at the time of formation of C-MOS structure or the like can be executed at low temperature so as not to spoil the function of the resist.Type: GrantFiled: August 7, 1996Date of Patent: December 22, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Bunji Mizuno, Hiroaki Nakaoka, Michihiko Takase, Ichiro Nakayama
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Patent number: 5780898Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.Type: GrantFiled: May 15, 1997Date of Patent: July 14, 1998Assignee: Matsushita Electric Industrial Co. Ltd.Inventors: Tokuhiko Tamaki, Tatsuo Sugiyama, Hiroaki Nakaoka
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Patent number: 5756382Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: January 23, 1997Date of Patent: May 26, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira
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Patent number: 5726071Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment. P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: January 23, 1997Date of Patent: March 10, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira
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Patent number: 5696008Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.Type: GrantFiled: June 21, 1996Date of Patent: December 9, 1997Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tokuhiko Tamaki, Tatsuo Sugiyama, Hiroaki Nakaoka
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Patent number: 5686340Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment. P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: September 30, 1996Date of Patent: November 11, 1997Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira
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Patent number: 5670810Abstract: On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET.Type: GrantFiled: August 24, 1995Date of Patent: September 23, 1997Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Tokuhiko Tamaki, Tatsuo Sugiyama, Hiroaki Nakaoka
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Patent number: 5618748Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: May 17, 1995Date of Patent: April 8, 1997Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira
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Patent number: 5447872Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: November 14, 1994Date of Patent: September 5, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira
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Patent number: 5428244Abstract: The adhesion between a metallic silicide film and a dielectric layer of a semiconductor device is improved. Formed on a silicon substrate is a gate dielectric layer formed on which is a metallic silicide film. A silicon dielectric layer of a rich-in-silicon-content type, which have a silicon content higher than a silicon content according to the stoichiometric composition formula, is deposited on the metallic silicide film. Because of this arrangement, a semiconductor device which is free from film peeling and which has an electrode wire with a low electrical resistance is achievable without decreasing the concentration of impurity at an electrode. If a passivation silicon oxide layer whose composition is close to a composition according to the stoichiometric composition formula is formed on the silicon oxide layer of a rich-in-silicon-content type, the degradation of the inside of an electrode, and the degradation of a gate oxide layer both caused by unwanted impurities from the outside can be prevented.Type: GrantFiled: June 28, 1993Date of Patent: June 27, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka
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Patent number: 5409847Abstract: Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.Type: GrantFiled: October 27, 1993Date of Patent: April 25, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mizuki Segawa, Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda, Ichiro Matsuo, Akihira Shinohara, Takashi Uehara, Mitsuo Yasuhira