Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth.

Abstract: In a process for the fabrication of a semiconductor integrated circuit using a double-side mirror-polished wafer or the like, at the portion of a notch 10 of a notched wafer 1, a chamfered angle &thgr;11 of the first chamfered portion 11 formed at the inner periphery of the first primary surface 3 is set smaller than the chamfered angle &thgr;12 of the second notch chamfered portion 12 of the second primary surface 4 and the chamfered width L11 is set larger than the chamfered width L12, whereby the obverse and reverse of the wafer are discriminated by optically discriminating the first notch chamfered portion and the second notch chamfered portion using reflected light, thereby making it certain to fabricate IC on the surface of the wafer and to use the reverse for its handling.

Abstract: A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp<Tr.ltoreq.

Abstract: A lockup control apparatus for use with an automotive vehicle having an engine, an automatic transmission and a torque converter operable in a coast lockup mode having a lockup capacity to provide a controlled degree of mechanical connection between the engine and the automatic transmission when the vehicle is coasting. The apparatus employs a memory having a desired value for the lockup capacity stored therein. A first signal is produced when a slip rotation occurs in the torque converter and a second signal is produced when the coast lockup mode is released. The desired lockup capacity value is updated with a greater value in response to the first signal. A frequency at which either of the first and second signals occurs is measured. The desired lockup capacity value is updated with a smaller value when the measured frequency exceeds a reference value.

Abstract: A printing apparatus including: a screen having a printing plate portion and reinforcing strips formed on both sides of the printing plate portion; a stretching device for stretching the screen by applying a predetermined tension thereto in a longitudinal direction of the strips; a squeegee for sliding on the screen in the same direction as the longitudinal direction of the strips, thereby transferring ink onto a surface subjected to printing; and a support table for supporting a material subjected to printing. The squeegee has a width larger than the minimum spacing of the strips on both sides of the printing plate portion. When the squeegee slides on the screen, it presses the printing plate portion and the strips on both sides simultaneously. In printing, the portion of the screen in contact with the surface subjected to printing is maintained flat in the transverse direction. A stretching amount of the screen in the moving direction of the squeegee is equal to a stretching amount of each strip.

Abstract: A screen process printing plate includes a screen holding plate provided with an opening and having flexibility and restoring capability. A screen is fixed to the screen holding plate and covers at least a part of the opening. A fixed member is provided for fixedly holding one end of the screen holding plate and a movable member is provided for holding an opposite end of the screen holding plate. The movable member is movable in a direction parallel to a plane defined by the screen. A biasing device is provided for biasing the movable member in a predetermined first direction away from the fixed member and in the direction of movement of the movable member. When a squeegee presses the screen holding plate and the screen, the screen holding plate and the screen are flexibly curved easily into contact with an object to be printed. Since the tension is supported by the screen holding plate, excessive tension does not occur in the screen.

Abstract: A solid silicone defoaming agent which includes a mixture of silicone oil having a viscosity of at least 20 centistokes at 25 degrees Centigrade and microparticulate silica, a copolymer selected from the group consisting of polyoxyalkylene and polyoxyalkylene/polysiloxane copolymers, and a wax selected from the group consisting of a water-insoluble wax which is insoluble in water at room temperature and which has a melting point of at least 35 degrees Centigrade, and a water-soluble wax which dissolves and disperses in water at room temeprature and which has a melting point of at least 30 degrees Centigrade.

Abstract: In a method of making a semiconductor device, a semiconductor wafer having a stacking fault originally contained in the wafer or produced in the wafer through the thermal oxidation of the wafer surface is subjected to an annealing treatment in a non-oxidative atmosphere to eliminate the stacking fault. A PN junction is thereafter formed in an area of the wafer from which the stacking fault is eliminated.