Abstract: The cable includes a plurality of first cables provided in parallel each having a core wire made of conductive metal and an insulation sheath covering the outer circumference of the core wire, and the core wires exposed from the respective insulation sheaths of the plurality of first cables are connected to the bus bar. The bus bar has a bolt insertion hole. Further, each first cable has an allowable voltage of less than 12 V.

Abstract: An electrical connection box includes a block that houses a plurality of electronic components, a housing body in which an internal space for housing the block is formed, and engagement portions that are provided between the block and the housing body and fits the block to the housing body. The engagement portions include a first engagement portion corresponding to the one direction end of the block in a specific direction and a second engagement portion corresponding to the other direction end of the block in the specific direction. In the first engagement portion, an inclined surface of the guide receiving portion is formed. When the block is inserted into the housing body in the insertion direction, the inclined surface is formed by cutting out an end where the guide receiving portion faces a guide piece in the insertion direction.

Abstract: An electric wire includes a core wire made of a conductive metal, and an insulating covering that covers an outer circumference of the core wire. A part of at least one of the core wire and the insulating covering is formed with a flat part flatter than a rest of the at least one of the core wire and the insulating covering.

Abstract: A machine tool includes a machining unit for feeding cutting oil to a work surface of a workpiece and machining the work surface, an optical sensor body unit dividing light outputted from a frequency sweep light source for outputting light whose frequency varies periodically into irradiation light with which the workpiece is to be irradiated and reference light, irradiating the workpiece with the irradiation light, detecting a peak frequency of interference light between reflected light which is irradiation light reflected by the workpiece, and the reference light, and measuring the distance from the machine tool to the work surface on the basis of the peak frequency, and a shape calculation unit calculating the shape of the workpiece on the basis of the distance measured by the optical sensor body unit.

Abstract: Provided is a method for manufacturing a group III nitride semiconductor substrate includes a substrate preparation step S10 of preparing a sapphire substrate, a heat treatment step S20 of performing a heat treatment on the sapphire substrate, a pre-flow step S30 of supplying a metal-containing gas over the sapphire substrate, a buffer layer forming step S40 of forming a buffer layer over the sapphire substrate under growth conditions of a growth temperature of 800° C. or higher and 950° C. or lower and a pressure of 30 torr or more and 200 torr or less, and a growth step S50 of forming a group III nitride semiconductor layer over the buffer layer under growth conditions of a growth temperature of 800° C. or higher and 1025° C. or lower, a pressure of 30 torr or more and 200 torr or less, and a growth speed of 10 ?m/h or more.

Abstract: Provided are: a polyurethane resin having a high degree of biomass, the polyurethane resin useful as a binder for a printing exhibiting excellent adhesion performance particularly to biomass plastic base materials and having excellent dispersibility of a pigment contained at a high concentration; and a printing ink using the polyurethane resin.

Abstract: There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 ?m or more and 1000 ?m or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

Abstract: An optical distance measurement device includes: a photodetector including PDs for receiving interference light output from an optical interference unit and outputting detection signals of the interference light; and a switch for selecting one of the detection signals output from the PDs, in which a distance calculation unit calculates a distance to a measurement object on the basis of the detection signal selected by the switch.

Abstract: A terminal base includes a straight, strip plate-shaped bus bar having a first end and a second end, the first end having a bolt insertion hole, a bolt configured to be inserted into the bolt insertion hole for electrical connection, the bolt having a head, a housing into which the bus bar is inserted from the second end of the bus bar such that the second end extends out of the housing, an O-ring configured to be mounted on the bus bar at a middle of the bus bar to seal a gap between the bus bar and the housing and a holder configured to regulate a movement of the O-ring. The holder is provided on the bus bar. The holder includes a bolt holding portion configured to hold an outer periphery of the head of the bolt over an entire circumference of the outer periphery of the head.

Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

Abstract: The optical distance measurement device is configured in such a manner that the frequency-swept light output unit outputs frequency-swept light during a time period from when frequency sweeping of frequency-swept light being output is completed to when the next frequency sweeping becomes possible, the frequency-swept light output during the time period being frequency swept at a different frequency from the frequency-swept light being output.

Abstract: The optical distance measurement device is configured to include an optical interference unit for separating the reflected light into a reflected light of a first polarized wave and a reflected light of a second polarized wave, extracting first and second components orthogonal to each other from an interference light of the reflected light of the first polarized wave and the reference light, and extracting third and fourth components orthogonal to each other from an interference light of the reflected light of the second polarized wave and the reference light, and a polarization rotation unit for acquiring one or more components of horizontal and vertical components of a polarized wave by rotating a polarization angle of a first complex signal having the first and second components and a polarization angle of a second complex signal having the third and fourth components, so that a distance calculation unit calculates, on the basis of the components acquired by the polarization rotation unit, a difference bet

Abstract: An optical transmission system includes a multicore optical fiber including a first core and a second core, and a plurality of optical transmission devices that output modulated signals of different types with the same wavelength at different optical powers from each other to the first core and the second core. According to the optical transmission system, degradation of signals due to inter-core crosstalk in the multicore optical fiber is suppressed and available bands are effectively used.

Abstract: An electrical connection box includes a block that houses a plurality of electronic components, a housing body in which an internal space for housing the block is formed, and engagement portions that are provided between the block and the housing body and fits the block to the housing body. The engagement portions include a first engagement portion corresponding to the one direction end of the block in a specific direction and a second engagement portion corresponding to the other direction end of the block in the specific direction. In the first engagement portion, an inclined surface of the guide receiving portion is formed. When the block is inserted into the housing body in the insertion direction, the inclined surface is formed by cutting out an end where the guide receiving portion faces a guide piece in the insertion direction.

Abstract: This high-strength free-cutting copper alloy comprises 75.4-78.0% Cu, 3.05-3.55% Si, 0.05-0.13% P and 0.005-0.070% Pb, with the remainder comprising Zn and inevitable impurities, wherein the amount of Sn existing as inevitable impurities is at most 0.05%, the amount of Al is at most 0.05%, and the total amount of Sn and Al is at most 0.06%. The composition satisfies the following relations: 78.0?f1=Cu+0.8×Si+P+Pb?80.8; and 60.2?f2=Cu?4.7×Si?P+0.5×Pb?61.5. The area percentage (%) of respective constituent phases satisfies the following relations: 29???60; 0???0.3; ?=0; 0???1.0; 98.6?f3=?+?; 99.7?f4=?+?+?+?; 0?f5=?+??1.2; and 30?f6=?+6×?1/2+0.5×??62. The long side of the ? phase is at most 25 ?m, the long side of the ? phase is at most 20 ?m, and the ? phase is present within the ? phase.

Abstract: This free-cutting copper alloy comprises 76.0-78.7% Cu, 3.1-3.6% Si, 0.40-0.85% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 75.0?f1=Cu+0.8×Si?7.5×Sn+0.5×Pb?78.2; 60.0?f2=Cu?4.8×Si—0.8×Sn?P+0.5×Pb?61.5; and 0.09?f3=P/Sn?0.30. The area percentage (%) of respective constituent phases satisfies the following relations: 30???65; 0???2.0; 0???0.3; 0???2.0; 96.5?f4=?+?; 99.4?f5=?+?+?+?; 0?f6=?+??3.0; and 35?f7=1.05×?+6×?1/2+0.5×??70. ? phase is present in ? phase, the long side of the ? phase is at most 50 ?m, and the long side of the ? phase is at most 25 ?m.

Abstract: According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.

Abstract: A terminal base includes a straight, strip plate-shaped bus bar having a first end and a second end, the first end having a bolt insertion hole, a bolt configured to be inserted into the bolt insertion hole for electrical connection, the bolt having a head, a housing into which the bus bar is inserted from the second end of the bus bar such that the second end extends out of the housing, an O-ring configured to be mounted on the bus bar at a middle of the bus bar to seal a gap between the bus bar and the housing and a holder configured to regulate a movement of the O-ring. The holder is provided on the bus bar. The holder includes a bolt holding portion configured to hold an outer periphery of the head of the bolt over an entire circumference of the outer periphery of the head.

Abstract: A mold includes: a first molding surface configured to form a lens surface of a scanning lens being elongated in a main-scanning direction; and a first coolant passage, which is disposed within the mold and through which a coolant to control the temperature of the first molding surface flows, wherein the first coolant passage includes: a first passage portion corresponding to a first lens portion which is a portion protruding most in an optical axis direction in the lens surface; and a second passage portion corresponding to a second lens portion which is a portion retreated most in the optical axis direction in the lens surface, and the second passage portion is located to be closer to the second lens portion than a virtual plane, which passes through the first passage portion and is orthogonal to the optical axis direction.

Abstract: This high-strength free-cutting copper alloy comprises 75.4-78.0% Cu, 3.05-3.55% Si, 0.05-0.13% P and 0.005-0.070% Pb, with the remainder comprising Zn and inevitable impurities, wherein the amount of Sn existing as inevitable impurities is at most 0.05%, the amount of Al is at most 0.05%, and the total amount of Sn and Al is at most 0.06%. The composition satisfies the following relations: 78.0?f1=Cu+0.8×Si+P+Pb?80.8; and 60.2?f2=Cu?4.7×Si?P+0.5×Pb?61.5. The area percentage (%) of respective constituent phases satisfies the following relations: 29???60; 0???0.3; ?=0; 0???1.0; 98.6?f3=?+?; 99.7?f4=?+?+?+?; 0?f5=?+??1.2; and 30?f6=?+6×?1/2+0.5×??62. The long side of the ? phase is at most 25 ?m, the long side of the ? phase is at most 20 ?m, and the ? phase is present within the ? phase.