Abstract: A thin film phosphor for an electroluminescent device, the phosphor being selected from the group consisting of thioaluminates, thiogallates and thioindates having at least one cation selected from elements of Groups IIA and IIB of the Periodic Table of Elements. The phosphor being activated by a rare earth metal and containing oxygen as a partial substitute for a portion of the sulphur in the crystal lattice of the thiogallate, thioindate or thioaluminate. The phosphor is a single phase homogeneous compound and provides improved luminance stability. An electroluminescent device comprising the thin film phosphor is also described and methods of making the phosphor of the invention.

Abstract: A display apparatus having electroluminescense (EL) elements includes a light emitting layer for generating light. A high energy laser beam is irradiated on the luminous element layer to define a plurality of regions of the light emitting layer. A plurality of first electrodes are arranged generally parallel to each other over a first surface of the light emitting layer and a plurality of second electrodes are arranged generally parallel to one another and perpendicular to the first electrodes on a second, opposite surface of the light emitting. The EL elements are formed at the intersections of the first and second electrodes.

Abstract: An antenna device includes a dielectric chip fitted to an aperture formed in an exterior casing of a terminal unit and having an outer surface thereof cooperating with an outer surface to form part of an outer surface of the terminal unit, and an antenna conductor embedded into the dielectric chip and disposed at a vertical position sufficiently far from a grounding conductor of a printed circuit board in the exterior casing.

Abstract: A small antenna comprises a planar antenna element, and a resin molded body integrally molded with the antenna element, and the resin molded body has a thin part and a thick part on both sides of the antenna element, and a gate portion at a resin molding is provided to the thin part.

Abstract: A compact antenna comprises a core which is a hard linear member having a predetermined shape corresponding to resonance characteristic, a conductor film which covers at least a portion of an outer surface of the core and which has higher electric conductivity than that of the core, and a substrate which closely surrounds and holds the outer surface of the core covered with the connection film. A film thickness of the conductor film is equal to a skin depth and thus, it is possible to inexpensively maintain reliability, and to prevent radiation efficiency from being lowered.

Abstract: A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Abstract: A first molybdenum layer made of a molybdenum film, an aluminum conductive layer made of an aluminum-neodymium alloy film, a second molybdenum layer made of a molybdenum film and an insulating film layer made of a silicon dioxide film are stacked, in this order from the bottom to the top, on an insulating substrate made of glass.

Abstract: A chip antenna is fabricated by forming a conductor plate having main and auxiliary antenna elements with a spacing therebetween which are connected through coupling portions to a frame surrounding the antenna elements, the conductor plate being embedded in or stacked on a dielectric chip and being cut along side faces of the dielectric chip. The main and auxiliary antenna elements have inner end edge portions that are opposed to each other over the entire width of the dielectric chip to provide a constant opposed area, suppressing a variation in antenna performance.

Abstract: Of margins of a resin molding with an antenna element buried therein which lie around the antenna element, a margin on that side of the resin molding where a gate mark remains is made larger than margins on other sides where there is no gate mark. Particularly, when the antenna element has a line antenna portion and a capacitance-adding portion provided at a distal end of the line antenna portion, the resin molding is injection-molded in such a way that a gate mark can be formed on that side where the capacitance-adding portion is located. Those portions of the resin molding where the terminal portions are led out are dented from levels of portions around those portions. This provides a chip antenna which has a simple structure with a high mechanical strength and does not prevent separation or cracking from occurring in the resin molding in which the antenna element is buried and a method of manufacturing the chip antenna.

Abstract: A line-shaped comprises an antenna element in which a strip-shaped conductor is bent in a width direction of a strip, and a chamfered portion is provided on an outer edge of a bent portion of the strip-shaped conductor.

Abstract: A small antenna comprises an antenna conductor, and a dielectric chip formed at surroundings of the antenna conductor by a plurality of resin moldings.

Abstract: A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing an oxide film which is formed on the surface of the semiconductor film.

Abstract: An antenna device includes a dielectric chip fitted to an aperture formed in an exterior casing of a terminal unit and having an outer surface thereof cooperating with an outer surface to form part of an outer surface of the terminal unit, and an antenna conductor embedded into the dielectric chip and disposed at a vertical position sufficiently far from a grounding conductor of a printed circuit board in the exterior casing.

Abstract: A chip antenna is fabricated by forming a conductor plate having main and auxiliary antenna elements with a spacing therebetween which are connected through coupling portions to a frame surrounding the antenna elements, the conductor plate being embedded in or stacked on a dielectric chip and being cut along side faces of the dielectric chip. The main and auxiliary antenna elements have inner end edge portions that are opposed to each other over the entire width of the dielectric chip to provide a constant opposed area, suppressing a variation in antenna performance.

Abstract: A compact antenna comprises a core which is a hard linear member having a predetermined shape corresponding to resonance characteristic, a conductor film which covers at least a portion of an outer surface of the core and which has higher electric conductivity than that of the core, and a substrate which closely surrounds and holds the outer surface of the core covered with the connection film. A film thickness of the conductor film is equal to a skin depth and thus, it is possible to inexpensively maintain reliability, and to prevent radiation efficiency from being lowered.

Abstract: A small antenna comprises a planar antenna element, and a resin molded body integrally molded with the antenna element, and the resin molded body has a thin part and a thick part on both sides of the antenna element, and a gate portion at a resin molding is provided to the thin part.

Abstract: A chip antenna comprises an antenna element, and a dielectric chip having the antenna element buried therein or stacked on a surface thereof. Particularly, the dielectric chip has a space area, for example, a flute for forming an air layer on an underside (in a surface not in contact with the antenna element). By varying the size of the flute, the antenna characteristic is tuned while consistently maintaining the outer dimensions of the chip antenna and a mounting height for the antenna element.

Abstract: A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.

Abstract: A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Abstract: A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.