Abstract: A display unit capable of inhibiting moisture and gas from penetrating into a liquid crystal layer and an alignment layer also after formation of a display electrode and suppressing decomposition of a material forming the display electrode is obtained. In this display unit, an impurity-introduced layer containing an impurity element having high electronegativity is formed on the surface of an insulator film and the surface of the display electrode after formation of the display electrode. Thus, the insulator film and the display electrode are improved in effects of preventing transmission of moisture and gas also after formation of the display electrode. The impurity-introduced layer formed on the surface of the display electrode stabilizes the surface of an ITO film forming the display electrode, thereby suppressing decomposition of the ITO film.

Abstract: A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.

Abstract: A polycrystalline silicon TFT of a top-gate type having a polycrystalline silicon film functioning as an active layer on a transparent insulating substrate. A gate electrode is provided on a channel region of the polycrystalline silicon film via a gate insulating film. On both sides of the channel region, source-drain regions of LDD structure consisting of low impurity concentration regions and high impurity concentration regions are provided. In the channel region of the polycrystalline silicon film, multiple monocrystal regions connecting source-drain regions are provided perpendicular to the transparent insulating substrate. Though electrons cannot smoothly pass through the channel region of the polycrystalline silicon film because of crystal grain boundaries and crystal defects therein, electric field effect mobility can be heightened by providing monocrystal regions, since electrons can smoothly pass through the monocrystal regions.

Abstract: A display apparatus using electroluminescence elements has a substrate, a plurality of anodes arranged generally parallel to each other on a surface of the substrate, and the EL element disposed on the substrate and the anodes. In addition, a material layer is located on the substrate and between the anodes. The material layer may be either a black matrix layer constructed of a light shielding film or a highly reflective multilayer film which suppresses optical crosstalk caused by light scattering originated in the EL element. The material layer covers the anodes such that only a part of each anode corresponding to a display area is exposed. The display apparatus may be used in either a simple matrix display system or an active matrix display system.

Abstract: A display apparatus having electroluminescense (EL) elements includes a light emitting layer for generating light. A high energy laser beam is irradiated on the luminous elemenent layer to define a plurality of regions of the light emitting layer. A plurality of first electrodes are arranged generally parallel to each other over a first surface of the light emitting layer and a plurality of second electrodes are arranged generally parallel to one another and perpendicular to the first electrodes on a second, opposite surface of the light emitting. The EL elements are formed at the intersections of the first and second electrodes.

Abstract: An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that is surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

Abstract: An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that its surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

Abstract: A sugar derivative wherein a hydroxy-carboxylic acid is combined to a position 1 of a sugar via ether linkage, and other hydroxyl groups are protected with a protective groups. A method of producing the sugar derivative, comprises allowing glycolic ester to react with a compound so as to combine said glycolic ester at the position 1 of the sugar skeleton, and then saponifying, said compound has on the position 1 any of hydroxyl group, halogen atom and sulfur atom with a substitutent group, and has other hydroxyl groups being protected with a protective groups.

Abstract: A taxoid derivative wherein sugar is combined with any one of paclitaxel, docetaxel and 10-deacetyl-bacatin III via a spacer. A method of producing the taxoid derivative comprises protecting hydroxyl groups at specific position of paclitaxel or docetaxel by protective compound followed by reacting with tetrabenzyl acetyloxyglucoside, and then carrying out debenzyl and detriethylsilyl reactions. A method of producing the taxoid derivative comprises reacting paclitaxel or docetaxel with tetrabenzyl acetyloxyglucoside, and then carrying out debenzyl reaction.

Abstract: A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Abstract: There is provided an unbranched cyclodextrin or a branched cyclodextrin inclusion complex of taxol. The complex is produced by adding an unbranched cyclodextrin of a branched cyclodextrin to taxol at a molar ratio of 1-20 times with respect to taxol. A method is provided for the improvement of the solubility of taxol in water by adding an unbranched cyclodextrin or a branched cyclodextrin thereto at a molar ratio of 1-20 times with respect to taxol. The solubility of taxol in water is improved by the present invention. A cyclodextrin inclusion complex of taxol according to the present invention serves to make taxol more easily absorbed when administered to a cancer patient, which is beneficial to cancer patients and the physiological effects of taxol may therefore be more effectively induced.

Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

Abstract: A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.