Abstract: A multilayer film including a first substrate and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid crystal molecules, wherein the first substrate has an orientation regulating force, and the first substrate has a tensile elastic modulus at 23° C. of 2,500 MPa or more.

Abstract: A multilayer film including: a first long-length substrate; and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid-crystal molecules, wherein the first substrate has an orientation-controlling force caused by stretching, and a slow axis of the first substrate is different from a lengthwise direction of the first substrate; an optically anisotropic laminate, a circular polarizing plate, and an organic EL display device having the anisotropic layer; as well as manufacturing method thereof.

Abstract: A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of

Abstract: A method of producing a polishing head including: a backing pad, for holding a workpiece back surface, stuck on a lower portion of a rigid body; and a ring template, for holding a workpiece edge, disposed on a lower surface of the backing pad. This polishing head brings a front surface of the workpiece into sliding contact with a polishing pad attached on a turn table while holding the workpiece back surface on the lower surface of the backing pad. The method includes sticking the backing pad on the lower portion of the rigid body with a double-sided tape under a reduced pressure without heating; and sticking the template on the backing pad with a double-sided tape or a liquid or paste reaction curable adhesive containing no solvent under a reduced pressure without heating. This method can polish the workpiece into a very flat workpiece.

Abstract: A method for selecting a template assembly includes: preparing a template assembly in which a template is concentrically attached on a base ring or a base plate having a larger outer diameter than the template, the template having a back pad to hold a workpiece back surface and a retainer ring positioned on the back pad and to hold an edge portion of the workpiece; non-destructively measuring a height position distribution of the retainer ring and the back pad on the template side of the template assembly, where an outer peripheral edge surface of the base ring or the base plate serves as a reference surface; calculating a flatness of the retainer ring and an average amount of step differences between the retainer ring and the back pad from the measured height position distribution; and selecting the template assembly based on the flatness and the average amount of step differences.

Abstract: A multilayer film including: a first long-length substrate; and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid crystal molecules, wherein the first substrate has an Nz factor of 1.1 to 3.0, variation of orientation angle of 1.0° or less, and an orientation-regulating force caused by stretching, and an angle formed between a slow axis of the first substrate and a widthwise direction of the first substrate is 0° or more and less than 90°; and manufacturing method and use thereof.

Abstract: A workpiece polishing apparatus including a polishing pad to polish a workpiece, a polishing agent supplying mechanism to supply a polishing agent, and a polishing head to hold the workpiece such that a back surface of the workpiece is held by a backing pad and an edge of the workpiece is held by an annular template. This apparatus polishes the workpiece by pressing the workpiece and the template against the polishing pad and thereby bringing the workpiece into sliding contact with the polishing pad. The template is made of a resin containing filler or woven fabric and has fine depressions created by filler or woven fabric exposed on the surface on the side that presses the polishing pad. This apparatus can stabilize the polishing rate of the outer circumferential portion of the workpiece and thereby polish the workpiece into a very flat workpiece.

Abstract: A multilayer film for an organic electroluminescent display device, the multilayer film including: a phase difference film; and a barrier layer directly disposed on a surface of the phase difference film, wherein the phase difference film includes one or more layers of a resin A as a layer in direct contact with the barrier layer, the resin A includes a crystallizable polymer A having a melting point of 250° C. or higher, and the layer of the resin A has a specific value of in-plane retardation Re measured with light having a wavelength of 590 nm at 23° C., and an absolute value of a photoelastic coefficient of 2.0×10?11 Pa?1 or less; a production method therefor; and use thereof.

Abstract: In the present invention, a first regeneration process is executed as a process for oxidizing and removing PM accumulated on the particulate filter if a measured value of a differential pressure sensor is not more than a predetermined upper limit value, assuming that the measured value of the differential pressure sensor is a value to be provided in a state in which only PM is accumulated on the particulate filter, when a difference between an estimated PM accumulation amount estimated from an operation history of an internal combustion engine and a PM accumulation amount calculated from the measured value of the differential pressure sensor is not less than a predetermined threshold value, while a second regeneration process is executed without executing the first regeneration process if the measured value is larger than the predetermined upper limit value.

Abstract: The present invention provides a method for polishing a wafer including, after unloading and before loading to hold, a next wafer to be polished: measurement to measure a depth PDt of a concave portion of a template after taking out a polished wafer; calculation to calculate a difference ?PD between the measured depth PDt of the concave portion and a depth PD0 of the concave portion of the template before being used for polishing; and adjustment to adjust polishing conditions for a next wafer to be polished in accordance with the calculated difference ?PD. Consequently, there are provided the method for polishing a wafer and a polishing apparatus which enable adjusting a fluctuation in flatness of each wafer caused due to a fluctuation in numerical value of a pocket depth of a template.

Abstract: In the present invention, a first regeneration process is executed as a process for oxidizing and removing PM accumulated on the particulate filter if a measured value of a differential pressure sensor is not more than a predetermined upper limit value, assuming that the measured value of the differential pressure sensor is a value to be provided in a state in which only PM is accumulated on the particulate filter, when a difference between an estimated PM accumulation amount estimated from an operation history of an internal combustion engine and a PM accumulation amount calculated from the measured value of the differential pressure sensor is not less than a predetermined threshold value, while a second regeneration process is executed without executing the first regeneration process if the measured value is larger than the predetermined upper limit value.

Abstract: A multilayer film including a first substrate and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid crystal molecules, wherein the first substrate has an orientation regulating force, and the first substrate has a tensile elastic modulus at 23° C. of 2,500 MPa or more.

Abstract: A multilayer film including: a first long-length substrate; and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid crystal molecules, wherein the first substrate has an Nz factor of 1.1 to 3.0, variation of orientation angle of 1.0° or less, and an orientation-regulating force caused by stretching, and an angle formed between a slow axis of the first substrate and a widthwise direction of the first substrate is 0° or more and less than 90°; and manufacturing method and use thereof.

Abstract: The present invention is method for polishing silicon wafer, the method including recovering used slurry containing polishing abrasive grains that have been supplied to the silicon wafer and used for polishing, and circulating and supplying the recovered used slurry to the silicon wafer to polish the silicon wafer, wherein mixed alkali solution containing chelating agent and either or both of a pH adjuster and a polishing rate accelerator is added to the recovered used slurry without adding unused polishing abrasive grains, and the recovered used slurry is circulated and supplied to the silicon wafer to polish the silicon wafer. As a result, there is provided a method for polishing a silicon wafer that can suppress the occurrence of metal impurity contamination and stabilize the composition (e.g., the concentration of the chelating agent) of the used slurry when the used slurry is circulated and supplied to the silicon wafer for polishing.

Abstract: A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

Abstract: An abnormality in an exhaust system component disposed at the downstream side of a particulate filter is determined by using a differential pressure sensor for measuring a differential pressure between a pressure of exhaust gas at the upstream side of the particulate filter and an atmospheric pressure.

Abstract: A multilayer film including: a first long-length substrate; and an optically anisotropic layer that is formed directly on the first substrate and contains cured liquid-crystal molecules, wherein the first substrate has an orientation-controlling force caused by stretching, and a slow axis of the first substrate is different from a lengthwise direction of the first substrate; an optically anisotropic laminate, a circular polarizing plate, and an organic EL display device having the anisotropic layer; as well as manufacturing method thereof.

Abstract: The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface.

Abstract: A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

Abstract: A method of producing a polishing head including: a backing pad, for holding a workpiece back surface, stuck on a lower portion of a rigid body; and a ring template, for holding a workpiece edge, disposed on a lower surface of the backing pad. This polishing head brings a front surface of the workpiece into sliding contact with a polishing pad attached on a turn table while holding the workpiece back surface on the lower surface of the backing pad. The method includes sticking the backing pad on the lower portion of the rigid body with a double-sided tape under a reduced pressure without heating; and sticking the template on the backing pad with a double-sided tape or a liquid or paste reaction curable adhesive containing no solvent under a reduced pressure without heating. This method can polish the workpiece into a very flat workpiece.