Patents by Inventor Hironori Banba
Hironori Banba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11162191Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.Type: GrantFiled: March 23, 2017Date of Patent: November 2, 2021Assignee: GLOBALWAFERS JAPAN CO., LTD.Inventors: Susumu Maeda, Hironori Banba, Haruo Sudo, Hideyuki Okamura, Koji Araki, Koji Sueoka, Kozo Nakamura
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Publication number: 20200181802Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.Type: ApplicationFiled: March 23, 2017Publication date: June 11, 2020Inventors: Susumu MAEDA, Hironori BANBA, Haruo SUDO, Hideyuki OKAMURA, Koji ARAKI, Koji SUEOKA, Kozo NAKAMURA
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Patent number: 10648101Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.Type: GrantFiled: February 24, 2017Date of Patent: May 12, 2020Assignee: GLOBALWAFERS JAPAN CO., LTD.Inventors: Susumu Maeda, Hironori Banba, Haruo Sudo, Hideyuki Okamura, Koji Araki, Koji Sueoka, Kozo Nakamura
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Publication number: 20190119828Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.Type: ApplicationFiled: February 24, 2017Publication date: April 25, 2019Inventors: Susumu MAEDA, Hironori BANBA, Haruo SUDO, Hideyuki OKAMURA, Koji ARAKI, Koji SUEOKA, Kozo NAKAMURA
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Patent number: 8936679Abstract: According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.Type: GrantFiled: September 14, 2011Date of Patent: January 20, 2015Assignee: Globalwafers Japan Co., LtdInventors: Hironori Banba, Hiromichi Isogai, Yoshiaki Abe, Takashi Ishikawa, Shingo Narimatsu, Jun Nakao, Hiroyuki Abiko, Michihiro Ohwa
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Publication number: 20120067272Abstract: According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed crystals based on a difference between a measured value of the diameter of the neck portion and a target value of the neck portion diameter previously stored; a second compensation portion which outputs a second pulling-up speed while limiting an upper limit of the first pulling-up speed to a first limit value; and a crucible rotation number compensation portion which lowers the number of a rotation of a crucible at least in a period where the upper limit of the first pulling-up speed is limited to the first limit value.Type: ApplicationFiled: September 14, 2011Publication date: March 22, 2012Applicant: Covalent Materials CorporationInventors: Hironori Banba, Hiromichi Isogai, Yoshiaki Abe, Takashi Ishikawa, Shingo Narimatsu, Jun Nakao, Hiroyuki Abiko, Michihiro Ohwa
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Patent number: 7120053Abstract: A semiconductor integrated circuit device includes a main cell array, a fuse cell array, main cell word lines arranged at the main cell array, and fuse cell word lines arranged at the fuse cell array. The fuse cell word lines are formed in a same direction as a direction of the main cell word lines.Type: GrantFiled: January 12, 2005Date of Patent: October 10, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Publication number: 20050117406Abstract: A semiconductor integrated circuit device includes a main cell array, a fuse cell array, main cell word lines arranged at the main cell array, and fuse cell word lines arranged at the fuse cell array. The fuse cell word lines are formed in a same direction as a direction of the main cell word lines.Type: ApplicationFiled: January 12, 2005Publication date: June 2, 2005Applicant: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Patent number: 6856543Abstract: A semiconductor integrated circuit device includes fuse cells arranged at a fuse cell array, a fuse cell data program and erase circuit, a fuse cell data control circuit, and fuse data latch circuits. The fuse cells include erasable and programmable nonvolatile memory cells. The fuse cell data program and erase circuit programs fuse data to the memory cells and erases the fuse data from the memory cells. The fuse cell data control circuit controls read out timing of the fuse data stored in the memory cells based on a signal generated upon detection of power-on. The fuse data latch circuits latch the fuse data read out from the memory cells.Type: GrantFiled: December 23, 2003Date of Patent: February 15, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Publication number: 20040136239Abstract: A semiconductor integrated circuit device includes nonvolatile memory cell, a source of the cell receiving a ground potential, and a gate of the cell receiving a first control signal; a transistor, a source of the transistor receiving a drain potential of the cell, and a gate of the transistor receiving a second control signal; and a controller. The controller receives a third control signal generated upon detection of power-on and outputs the first and second control signals. A potential of the first control signal changes from the ground potential to a potential different from the ground potential, which is maintained during a first period of time, and a potential of the second control signal changes from the ground potential to a potential different from the ground potential, which is maintained during a second period of time.Type: ApplicationFiled: December 23, 2003Publication date: July 15, 2004Applicant: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Patent number: 6700817Abstract: A semiconductor integrated circuit device includes a nonvolatile memory cell, a source of the cell receiving a ground potential, and a gate of the cell receiving a first control signal; a transistor, a source of the transistor receiving a drain potential of the cell, and a gate of the transistor receiving a second control signal; and a controller. The controller receives a third control signal generated upon detection of power-on and outputs the first and second control signals. A potential of the first control signal changes from the ground potential to a potential different from the ground potential, which is maintained during a first period of time, and a potential of the second control signal changes from the ground potential to a potential different from the ground potential, which is maintained during a second period of time.Type: GrantFiled: October 8, 2002Date of Patent: March 2, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Patent number: 6601199Abstract: A plurality of memory macros are laid out in a semiconductor chip. Macro ID generation circuits generate macro IDs for identifying the memory macros, and have different layouts. These macro ID generation circuits are arranged outside the memory macros in the semiconductor chip, so that test control blocks in the memory macros can use the same layouts between all the memory macros to reduce the design load.Type: GrantFiled: September 24, 1999Date of Patent: July 29, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Ryo Fukuda, Hironori Banba, Toshimasa Namekawa, Shinji Miyano
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Patent number: 6560144Abstract: A nonvolatile semiconductor memory device includes a row decoder circuit having first and second N-channel MOS transistors and first and second P-channel MOS transistors which correspond to each of word lines. One end of a source-to-drain current path of the first N-channel MOS transistor is connected to the word line, and the other end thereof is connected to a corresponding one of output terminals of a predecoder circuit. One end of a source-to-drain current path of the second N-channel MOS transistor is connected to the word line, and the other end thereof is supplied with a voltage of OV or more in a data erase mode and is supplied with a low logical level signal in modes other than the data erase mode.Type: GrantFiled: March 4, 2002Date of Patent: May 6, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Hironori Banba
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Publication number: 20030026160Abstract: A semiconductor integrated circuit device comprises an integrated circuit provided in a semiconductor chip and setting information memory. The setting information memory stores operation/function setting information of the integrated circuit and receives a signal generated based on power-on in reading out the operation/function setting information.Type: ApplicationFiled: October 8, 2002Publication date: February 6, 2003Applicant: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Patent number: 6498761Abstract: A number of booster circuits to be operated out of a plurality of booster circuits are selected in accordance with a level of the boosted voltage to be provided at a common voltage output terminal of the plurality of booster circuits. With such an arrangement, fluctuations in the output voltage that can appear when a light load is applied to the voltage output terminal of the booster circuits can be effectively reduced to make the semiconductor memory device driven by the power supply circuit operate reliably. Further, one of the output terminals of intermediate voltage booster circuits is connected to the output terminal of a high voltage booster circuit. Then, a desired voltage can be obtained from the booster circuits that are implemented without using costly transistors to reduce the chip cost.Type: GrantFiled: October 23, 2001Date of Patent: December 24, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hironori Banba, Shigeru Atsumi
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Patent number: 6480426Abstract: A semiconductor integrated circuit device includes an integrated circuit provided in a semiconductor chip and setting information memory. The setting information memory stores operation/function setting information of the integrated circuit and receives a signal generated based on power-on in reading out the operation/function setting information.Type: GrantFiled: October 16, 2001Date of Patent: November 12, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Masao Kuriyama, Akira Umezawa, Hironori Banba, Tadayuki Taura, Hidetoshi Saito
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Patent number: 6433619Abstract: First transistors for charging respective one side nodes of a plurality of capacitors are connected to these nodes of the capacitors, respectively. Second transistors for outputting electric charge of each capacitor are connected between respective one side nodes of the capacitors and an output terminal, respectively. A plurality of third transistors for transferring the electric charge of the other side nodes of the capacitors to the other nodes are connected to the respective other nodes. The electric charge of each capacitor is serially transferred from nodes of a high electric potential to nodes of a lower electric potential through one path by sequentially controlling the third transistors, or the electric charge of each capacitor is parallel transferred between arbitrary nodes of a high electric potential and low nodes through a plurality of paths. By these operations, electric charge of each capacitor is recycled.Type: GrantFiled: October 10, 2001Date of Patent: August 13, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hironobu Akita, Masaharu Wada, Kenji Tsuchida, Hironori Banba
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Publication number: 20020097596Abstract: A nonvolatile semiconductor memory device comprises a row decoder circuit having first and second N-channel MOS transistors and first and second P-channel MOS transistors which correspond to each of word lines. One end of a source-to-drain current path of the first N-channel MOS transistor is connected to the word line, and the other end thereof is connected to a corresponding one of output terminals of a predecoder circuit. One end of a source-to-drain current path of the second N-channel MOS transistor is connected to the word line, and the other end thereof is supplied with a voltage of 0V or more in a data erase mode and is supplied with a low logical level signal in modes other than the data erase mode.Type: ApplicationFiled: March 4, 2002Publication date: July 25, 2002Applicant: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Hironori Banba
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Patent number: 6385087Abstract: A nonvolatile semiconductor memory device includes a row decoder circuit having first and second N-channel MOS transistors and first and second P-channel MOS transistors which correspond to each of word lines. One end of a source-to-drain current path of the first N-channel MOS transistor is connected to the word line, and the other end thereof is connected to a corresponding one of output terminals of a predecoder circuit. One end of a source-to-drain current path of the second N-channel MOS transistor is connected to the word line, and the other end thereof is supplied with a voltage of 0V or more in a data erase mode and is supplied with a low logical level signal in modes other than the data erase mode.Type: GrantFiled: May 9, 2001Date of Patent: May 7, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Shigeru Atsumi, Hironori Banba
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Patent number: 6356499Abstract: A number of booster circuits to be operated out of a plurality of booster circuits are selected in accordance with a level of the boosted voltage to be provided at a common voltage output terminal of the plurality of booster circuits. With such an arrangement, fluctuations in the output voltage that can appear when a light load is applied to the voltage output terminal of the booster circuits can be effectively reduced to make the semiconductor memory device driven by the power supply circuit operate reliably. Further, one of the output terminals of intermediate voltage booster circuits is connected to the output terminal of a high voltage booster circuit. Then, a desired voltage can be obtained from the booster circuits that are implemented without using costly transistors to reduce the chip cost.Type: GrantFiled: August 17, 2000Date of Patent: March 12, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Hironori Banba, Shigeru Atsumi