Abstract: More flexible contactless communication is made possible. There is provided an information processing apparatus including a detection unit that detects a position of a device to be detected relative to a detection surface, a first communication unit that performs contactless communication with the device on the basis of the position, and a second communication unit that performs predetermined communication with an information processing terminal on the basis of acquisition of identification information of the device based on the contactless communication.

Abstract: A method for manufacturing a conductive wire includes conducting a continuous casting of a conductive alloy material at a casting rate of not less than 40 mm/min and not more than 200 mm/min to form a conductive wire with a primary diameter, the conductive alloy material containing not more than 1.0 mass % of an added metal element, reducing a diameter of the conductive wire with the primary diameter to form a conductive wire with a secondary diameter, heat treating the conductive wire with the secondary diameter so that tensile strength thereof is reduced to not less than 90% and less than 100% of tensile strength before the heat treating, and reducing a diameter of the conductive wire with the secondary diameter and the reduced tensile strength to generate a logarithmic strain of 7.8 to 12.0 therein to form a conductive wire with a tertiary diameter.

Abstract: A method for manufacturing a conductive wire includes conducting a continuous casting of a conductive alloy material at a casting rate of not less than 40 mm/min and not more than 200 mm/min to form a conductive wire with a primary diameter, the conductive alloy material containing not more than 1.0 mass % of an added metal element, reducing a diameter of the conductive wire with the primary diameter to form a conductive wire with a secondary diameter, heat treating the conductive wire with the secondary diameter so that tensile strength thereof is reduced to not less than 90% and less than 100% of tensile strength before the heat treating, and reducing a diameter of the conductive wire with the secondary diameter and the reduced tensile strength to generate a logarithmic strain of 7.8 to 12.0 therein to form a conductive wire with a tertiary diameter.

Abstract: More flexible contactless communication is made possible. There is provided an information processing apparatus including a detection unit that detects a position of a device to be detected relative to a detection surface, a first communication unit that performs contactless communication with the device on the basis of the position, and a second communication unit that performs predetermined communication with an information processing terminal on the basis of acquisition of identification information of the device based on the contactless communication.

Abstract: A method for manufacturing a conductive wire includes conducting a continuous casting of a conductive alloy material at a casting rate of not less than 40 mm/min and not more than 200 mm/min to form a conductive wire with a primary diameter, the conductive alloy material containing not more than 1.0 mass % of an added metal element, reducing a diameter of the conductive wire with the primary diameter to form a conductive wire with a secondary diameter, heat treating the conductive wire with the secondary diameter so that tensile strength thereof is reduced to not less than 90% and less than 100% of tensile strength before the heat treating, and reducing a diameter of the conductive wire with the secondary diameter and the reduced tensile strength to generate a logarithmic strain of 7.8 to 12.0 therein to form a conductive wire with a tertiary diameter.

Abstract: An antenna circuit which includes, a resonant circuit which is configured by at least first and second capacitors, and antenna coils; a transmitter-receiver circuit which has a transmission terminal and a reception terminal; and an adjustment circuit which adjusts an impedance between the resonant circuit and the transmitter-receiver circuit, in which a combination of capacitances of the first and second capacitors is set in a predetermined range of a composite capacitance of the first and second capacitors, and a signal from a terminal which is provided between the first and second capacitors is input to the reception terminal.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: A solar cell lead wire includes a molten solder plated layer on a strip-shaped conductive material. The thickness of the oxide film on a surface to the molten solder plate layer is suppressed to be not more than 7 nm.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: A solar cell lead wire includes a molten solder plated layer on a strip-shaped conductive material formed rectangular in a cross section thereof so as to be bonded by soldering to an electrode of a solar cell, using a flux. A thickness of an oxide film on a surface of the molten solder plated layer, which is a sum of a thickness of an SnO layer and a thickness of an SnO2 layer on the surface of the molten solder plated layer, is not more than 7 nm.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: An antenna circuit which includes, a resonant circuit which is configured by at least first and second capacitors, and antenna coils; a transmitter-receiver circuit which has a transmission terminal and a reception terminal; and an adjustment circuit which adjusts an impedance between the resonant circuit and the transmitter-receiver circuit, in which a combination of capacitances of the first and second capacitors is set in a predetermined range of a composite capacitance of the first and second capacitors, and a signal from a terminal which is provided between the first and second capacitors is input to the reception terminal.

Abstract: A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06<x?0.3, 0?y?1, 0?z?0.3, 0?(y+z)?1, 0<u?1, 0?v?0.75, 0?w?0.2, 0<(u+v)?1 and ?0.06?m?0.06. This solid solution composition preferably forms the same rhombohedral-tetragonal morphotropic phase boundary as in PZT, is environmentally friendly, and displays an excellent piezoelectric constant d33.

Abstract: A solar cell lead wire includes a conductive material, and a solder plated layer on a periphery of the conductive material. The solder plated layer is formed flat by rolling. A method of manufacturing a solar cell lead wire includes feeding an elongate conductive material from a feed reel, the elongate conductive material including a rectangular conductor or a round conductor, soaking the conductive material in a molten solder in a molten solder plating bath, cooling the conductive material to have a plated wire with a solder plated layer formed on the conductive material, and winding the plated wire on a winding reel. The plated wire is formed flat by rolling after the solder plated layer of the plated wire is solidified by the cooling.

Abstract: A solar cell lead wire includes a strip-shaped conductive material formed by rolling a wire, and upper and lower melt solder-plated layers formed to be flat on upper and lower surfaces, respectively, of the strip-shaped conductive material by supplying melt solder thereto.

Abstract: Disclosed is a lead wire for a solar cell having excellent bondability with a solar cell. The solar cell lead wire (10) has a band plate-shaped electroconductive material (12) that is formed with straight-angled cross-sectional shape and is covered by a molten solder plating layer (13), with the thickness of the oxide film on the surface of the molten solder plating layer (13) being 7 nm or less.

Abstract: A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06<x?0.3, 0?y?1, 0?z?0.3, 0?(y+z)?1, 0?u?1, 0?v?0.75, 0?w?0.2, 0<(u+v)?1 and ?0.06?m?0.06. This solid solution composition is a novel solid solution composition composed mainly of (Na,K)NbO3, which preferably forms the same rhombohedral-tetragonal morphotropic phase boundary as in PZT and is environmentally friendly.