Abstract: A solar cell lead wire includes a conductive material, and a solder plated layer on a periphery of the conductive material. The solder plated layer is formed flat by rolling. A method of manufacturing a solar cell lead wire includes feeding an elongate conductive material from a feed reel, the elongate conductive material including a rectangular conductor or a round conductor, soaking the conductive material in a molten solder in a molten solder plating bath, cooling the conductive material to have a plated wire with a solder plated layer formed on the conductive material, and winding the plated wire on a winding reel. The plated wire is formed flat by rolling after the solder plated layer of the plated wire is solidified by the cooling.

Abstract: A solar cell lead wire includes a strip-shaped conductive material formed by rolling a wire, and upper and lower melt solder-plated layers formed to be flat on upper and lower surfaces, respectively, of the strip-shaped conductive material by supplying melt solder thereto.

Abstract: A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 ??·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.

Abstract: This invention relates to a process for the production of an oxide of a metal A by heating precursors of the oxide of a metal A, in the presence of an oxygen partial pressure control agent comprising an oxide of a metal B that is capable of assuming multiple valence numbers. The process is carried out under a condition that an ionization tendency relationship of Ai+<Bj+<A0 is satisfied, where i is a valence number of the metal A in the oxide to be produced and j is a valence number of the metal B in the oxygen partial pressure control agent.

Abstract: A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.

Abstract: A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900° C. to 1300° C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000° C. to 1500° C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Abstract: An electrically conductive high-melting-point oxide light source that can be used in an oxygen-containing atmosphere includes a sintered oxide having as an essential constituent an oxide of an element selected from the group consisting of ruthenium, iridium, rhodium and rhenium. It is used an oxygen-containing atmosphere at a temperature of not less than 1700° C. A high-melting-point conductive paste includes particles of a sintered oxide having as an essential constituent an oxide of an element selected from the group consisting of ruthenium, iridium, rhodium and rhenium, and a binder and solvent. An exhaust gas filter includes a powdered sintered oxide having as an essential constituent an oxide of an element selected from the group consisting of ruthenium, iridium, rhodium and rhenium, the powdered sintered oxide being applied to and baked on, or formed into a heating element and attached to, a surface of a diesel engine exhaust gas filter of ceramic to form a heating element.

Abstract: A method of synthesizing metallic oxides, when synthesizing an oxide of a metal A, controls oxygen partial pressure by using an oxygen partial pressure control agent containing an oxide of a metal B capable of assuming multiple valence numbers. The method satisfies an ionization tendency relationship of A1+<Bj+<A0, where i is the valence number of the metal A in the oxide to be synthesized and j is the valence number of the metal B in the oxygen partial pressure control agent.

Abstract: A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.

Abstract: A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound or Ru metal. The mixture is sintered at a primary temperature of 900° C. to 1300° C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape and is again sintered, this time at a secondary temperature of 1000° C. to 1500° C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Abstract: A scanning tunneling microscope according to the present invention comprises a tip for emitting spin-polarized electrons and a magnet for applying a magnetic field to this tip. This tip is constituted of a metal needle made of a tungsten and an EuS layer about 400 .ANG. which is coated on the surface of the metal needle. This tip is brought to such a close distance to the surface of the specimen that tunnel current flows. A magnetic field is applied to the axial direction of the tip a bias voltage is applied between the tip and the specimen and the tip is made to scan the surface of the specimen. The tip having a magnetic field applied to the axial direction thereof emits only spin-polarized electrons with the electron spins oriented in the axial direction. The spin-polarized electrons flows only in the area at the surface of the specimen where empty states for the electrons having spins in the parallel direction are distributed.

Abstract: The amount of deformations such as expansions or contractions of a substance caused in accordance with irradiation of cyclically interrupted monochromatic light is detected by either the changes in a tunnel current sensitive to the changing distance between a sample surface and a detection probe or the amount of changes in a probe fine feed mechanism keeping the tunnel current constant between a sample surface and a detection probe at all times, so that the absorption spectrum intrinsic to the substance relative to the irradiating optical energy according to its wavelength is measured to examine the optical properties of the substance.

Abstract: A probe is shifted at a distance where the probe and a material to be obsed are sufficiently far away from each other relative to the roughness of the material's surface. This method prevents the probe from colliding with the material's surface during the shift of the probe thereby enabling high speed shift of the probe. Further, a micro-drive mechanism for controlling tunnel currents may be stopped during the shift in order to minimize the drift which may be caused by heat generated inside the micro-drive mechanism. Therefore, it is particularly advantageous to apply this STM measuring method for high-speed and stable measurement of a very large surface area and a very rough surface.

Abstract: A relative displacement control apparatus provides both coarse and extremely fine precise control over displacements between a sample and a detecting probe as required, e.g. in operations of optical instruments, analyzing instruments and scanning tunneling microscopes. This precise fine displacement is produced through a double-lever-action which is created substantially by means of an arm assembly preferably with a piezoelectric drive for precise displacement control, a support pivotally holding the arm assembly, a rigid arm fixed solidly atop the support and a pointed stop or "foot" fixed in the proximity of the free end of the rigid arm.