Abstract: A stacked capacitor having a fin structure, and a method of fabrication. A first electrode with a fin structure is formed on a semiconductor substrate and a second electrode is formed over the first electrode and spaced therefrom by a dielectric film. The first electrode comprises an electrically conductive material, different from polycrystalline silicon, and a polycrystalline silicon film containing an impurity and covering the electrically conductive material. Thereby, the film thickness of the storage electrode of the fin capacitor is reduced and the corrugation of the surface of a memory device by the capacitor structure is mitigated.

Abstract: A heterojunction bipolar transistor includes a tungsten layer formed on a base layer. An insulating sidewall is formed on the base layer and along a vertical wall of an emitter layer formed on the base layer. An end of the tungsten layer faces a base-emitter heterojunction through the sidewall.

Abstract: A semiconductor growth process wherein a plurality of layers, each consisting of a different king of semiconductor material, are grown, includes the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of the substrate to cause a growth of the first semiconductor layer, lowering the temperature of the substrate to below first growth starting temperature, and at the same time, stopping the supply of the first material gas, to stop the growth of the first semiconductor layer, heating the substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of the substrate to cause a growth of the semiconductor layer.

Abstract: A complementary metal oxide semiconductor device comprises a substrate made of a first semiconductor material doped to a first conductivity type, a first field effect transistor including a first channel region defined in the substrate, a first source region provided on the substrate, a first drain region provided on the substrate and a gate electrode provided on the the substrate above the first channel region, a well defined in the substrate in an area excluding the first field effect transistor, a second field effect transistor including a second channel region defined in the well, a second source region provided on the well, a second drain region provided on the well, and a second gate electrode provided on the the well above the second channel region, wherein at least one of the first and second source regions is made of a semiconductor material having a band gap substantially narrower than the band gap of the first semiconductor material.

Abstract: A rapid-releasing oral particle pharmaceutical preparation with its unpleasant taste masked comprising a core and a film layer coating the core, the core at least containing a drug having an unpleasant taste and a water-swelling agent, and the film layer at least containing ethylcellulose and a water-soluble substance, the amount of the drug in the core being at most 40% (based on the final particle preparation and so on), the amount of the water-swelling agent being about 35% to about 70%, the amount of ethylcellulose in the film layer being about 3 to about 11%, and the amount of the water-soluble substance being about 0.1 to about 0.8 times the weight of the ethylcellulose.

Abstract: After the oxygen ion is implanted to the surface of (100) Si single crystal substrate, the annealing of about 10 cycles is conducted under the nitrogen gas ambience, wherein the high temperature of 1150.degree. C. and low temperature of 450.degree. C. are alternately repeated during one heat cycle of about seven minutes and thereby a Si single crystal layer is formed near the surface and the SiO.sub.2 insulator is then formed just under the Si single crystal layer.