Abstract: An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving an electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.

Abstract: The invention is an optical film at least containing cellulose acylate and a compound having a structure denoted by General Formula (I) described below, and a polarizing plate and a liquid crystal display device employing the optical film. R1 and R3 represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, or an aryl group, and R5a and R5b represent an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, an aryl group, or a heterocyclic group. R1, R3, R5a, and R5b may have a substituent group.

Abstract: An array type light-receiving device includes a plurality of pixels two-dimensionally arranged in a first direction and a second direction perpendicular to the first direction, each of the pixels including a light-receiving layer having a responsivity to a wavelength of light. The pixels arranged in the second direction constitute a plurality of pixel lines extending in the second direction, the plurality of pixel lines being arranged in the first direction to form an array. The pixels in each of the pixel lines have different pixel areas from each other. In addition, the pixel area of each of the pixels included in at least one of the pixel lines is determined in accordance with the responsivity to a wavelength of light received by each of the pixels.

Abstract: This disclosure provides a detection apparatus configured to detect a moire pattern generated by grid patterns having grid pitches different from each other including: an image-pickup unit configured to pick up an image of the moire pattern; an imaging optical system configured to cause the image-pickup unit to image the moire pattern; and a processing unit configured to process an image-pickup result of the moire pattern imaged by the image-pickup unit, wherein a mark including a plurality of patterns having a width not larger than the resolving power of the imaging optical system arranged in a measuring direction and changed in duty ratio between the widths and intervals of the plurality of patterns is imaged by the image-pickup unit, and the processing unit evaluates the detection apparatus by processing the image-pickup result of the mark picked up by the image-pickup unit.

Abstract: A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

Abstract: A cellulose ester film contains a compound having a structural unit denoted by —NR—(C?O)— in which R represents a hydrogen atom or a substituent, a surface having knoop hardness of greater than or equal to 210 N/mm2 is provided, and loss tangent tan ? at 25° C. is greater than or equal to 0.03.

Abstract: A light receiving device includes a mesa structure including a light absorption layer disposed on a semiconductor region; a passivation film disposed on a side surface of the mesa structure, the passivation film containing oxygen; and a nitriding layer disposed between the side surface of the mesa structure and the passivation film. The light absorption layer includes a super-lattice structure including first semiconductor layers and second semiconductor layers that are alternately stacked. The first semiconductor layer is made of a III-V group compound semiconductor. The second semiconductor layer is made of a III-V group compound semiconductor that is different from the III-V group compound semiconductor of the first semiconductor layer. The first semiconductor layer contains antimony as a group V constituent element. In addition, the nitriding layer is made of a nitride containing a group III constituent element of the first semiconductor layer and/or the second semiconductor layer.

Abstract: A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.

Abstract: Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.

Abstract: A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.

Abstract: Disclosed is a cellulose acylate film containing a compound having at least one connecting group selected from a group consisting of a bivalent connecting group denoted by —NH—(C?O)—O— and a bivalent connecting group denoted by —NH—(C?O)—NR— in which R represents a hydrogen atom or a substituent group, and at least one polar group which is a residue of a compound having a C log P value of less than or equal to 0.85 (however, an aromatic hetero ring-containing group which is a residue of a compound having a C log P value of less than or equal to 0.85 is excluded from the polar group), in which an equivalent weight U obtained as a value which is obtained by dividing a molecular weight by the number of connecting groups included in one molecule is less than or equal to 515.

Abstract: A cellulose acylate film, containing at least: a cellulose acylate; and a compound represented by the following Formula (I): wherein R1, R3 and R5 each independently designate a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, or an aromatic group, which groups may have a further substituent; with the proviso that at least one of R1, R3 and R5 is an alkyl group substituted with a group having a ring structure or a cycloalkyl group, and the total number of the ring structures existing in R1, R3 and R5 is 3 or more.

Abstract: The inventions are an optical film containing cellulose acylate and a compound having a structure denoted by General Formula (A) described below, and a polarizing plate and a liquid crystal display device employing the optical film. L represents n-valent connecting group, n represents an integer of greater than or equal to 2, and A represents a heterocyclic group denoted by General Formula (I). R1, R3, and R5 represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, or a heteroaryl group. Here, any one of R1, R3, and R5 is bonded to L.

Abstract: The invention is an optical film at least containing cellulose acylate and a compound having a structure denoted by General Formula (I) described below, and a polarizing plate and a liquid crystal display device employing the optical film. R1 and R3 represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, or an aryl group, and R5a and R5b represent an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, an aryl group, or a heterocyclic group. R1, R3, R5a, and R5b may have a substituent group.

Abstract: A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 ?m or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

Abstract: An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.

Abstract: The polymer film comprises a carbonyl bond-containing polymer and a compound having ?h of equal to or higher than 11.0 and ?? of equal to or lower than 1.50, wherein the ?h is a value of hydrogen-bonding capacity calculated by Hoy method and the ?? is a value calculated by equation 1: ??=|x?13.3|??Equation 1 wherein, in equation 1, ? represents an interatomic distance in the polymer film between atoms most distant from each other among molecules in the compound, excluding a hydrogen atom, calculated by molecular dynamics calculation.

Abstract: The cellulose acylate film includes a compound denoted by formula 1 below: wherein, in formula 1, Het denotes an optionally substituted aromatic hetero ring; X1 denotes a single bond or a group selected from the group consisting of —O—, —NR2—, —CR3R4—, —S—, and —CO—; each of R2, R3, and R4 independently denotes a hydrogen atom or a substituent; R1 denotes a partial structure of valence n, with n denoting an integer greater than or equal to 1; wherein the compound includes at least one group selected from the group consisting of —NH— and —CO— per molecule, and at least one group selected from the group consisting of —X2—(C?X4)—X3—, —NR5—(SO2)—, —CO—NR6—CO—, —O—, —S—, —COOH, —CN, —NR7R8, —OH, and —SH per molecule.

Abstract: An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to each light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to each pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped by the sensor chip, and the read-out circuit has no portion extending off the sensor chip.