Abstract: Provided is an optical film which is excellent in adhesiveness with a hard coat layer after a light resistance test, excellent in surface hardness, and excellent in the shape of the surface. The optical film contains cellulose acylate and a compound represented by the following Formula (I). In Formula (I), L represents a linking group of (n1+n2) valence of which the number of atoms linking A1 to A2 is less than or equal to 8; here, n1+n2 represents an integer of greater than or equal to 2, n1 represents an integer of greater than or equal to 1, and n2 represents an integer of greater than or equal to 0; and A1 represents a group represented by Formula (II) and A2 represents a group represented by Formula (III).

Abstract: A cellulose acylate film, which includes a compound denoted by general formula (I) below, the equivalent U of which, calculated as a value obtained by dividing the molecular weight of the compound by the number of divalent linking groups denoted by —O—C(?O)—NH— contained per molecule, is less than or equal to 515, wherein, in general formula (I), each of L11 and L21 independently denotes an optionally substituted alkylene group; each of L12 and L22 independently denotes a single bond, any one of or any combination of —O—, —NR1—, —S— and —C(?O)—; R1 denotes a hydrogen atom or a substituent; each of n1 and n2 independently denotes an integer of 0 to 20, with at least either n1 or n2 being an integer of greater than or equal to 1.

Abstract: An array type light-receiving device includes a plurality of pixels two-dimensionally arranged in a first direction and a second direction perpendicular to the first direction, each of the pixels including a light-receiving layer having a responsivity to a wavelength of light. The pixels arranged in the second direction constitute a plurality of pixel lines extending in the second direction, the plurality of pixel lines being arranged in the first direction to form an array. The pixels in each of the pixel lines have different pixel areas from each other. In addition, the pixel area of each of the pixels included in at least one of the pixel lines is determined in accordance with the responsivity to a wavelength of light received by each of the pixels.

Abstract: A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.

Abstract: A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material.

Abstract: A light receiving device includes a mesa structure including a light absorption layer disposed on a semiconductor region; a passivation film disposed on a side surface of the mesa structure, the passivation film containing oxygen; and a nitriding layer disposed between the side surface of the mesa structure and the passivation film. The light absorption layer includes a super-lattice structure including first semiconductor layers and second semiconductor layers that are alternately stacked. The first semiconductor layer is made of a III-V group compound semiconductor. The second semiconductor layer is made of a III-V group compound semiconductor that is different from the III-V group compound semiconductor of the first semiconductor layer. The first semiconductor layer contains antimony as a group V constituent element. In addition, the nitriding layer is made of a nitride containing a group III constituent element of the first semiconductor layer and/or the second semiconductor layer.

Abstract: An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.

Abstract: This disclosure provides a detection apparatus configured to detect a moire pattern generated by grid patterns having grid pitches different from each other including: an image-pickup unit configured to pick up an image of the moire pattern; an imaging optical system configured to cause the image-pickup unit to image the moire pattern; and a processing unit configured to process an image-pickup result of the moire pattern imaged by the image-pickup unit, wherein a mark including a plurality of patterns having a width not larger than the resolving power of the imaging optical system arranged in a measuring direction and changed in duty ratio between the widths and intervals of the plurality of patterns is imaged by the image-pickup unit, and the processing unit evaluates the detection apparatus by processing the image-pickup result of the mark picked up by the image-pickup unit.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: A polarizing plate includes two protective films and a polarizer provided between the two protective films, and the polarizer has a thickness of 3 ?m to 18 ?m, at least one of the protective films has a thickness of 3 ?m to 40 ?m and contains at least one resin and a compound in an amount of 1 part by mass to 20 parts by mass based on 100 parts by mass of the resin, the compound having at least one hydrogen-donating group capable of forming a hydrogen bond and a ratio of molecular weight to number of aromatic rings of 300 or less, and the polarizing plate has a thickness of 15 ?m to 70 ?m.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 ?m.

Abstract: An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to the light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to the pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped with the sensor chip, and the read-out circuit has no portion extending off the sensor chip.

Abstract: A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.

Abstract: A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer.

Abstract: A cellulose acetate resin composition having a cellulose acetate ether compound and a stabilizer; the cellulose acetate ether compound comprising a specific atomic group, the specific atomic group being introduced into a cellulose acetate through an ether group derived from a hydroxyl group, the specific atomic group being introduced with a substitution degree of 0.01 or more; the cellulose acetate comprising residual hydroxyl group in a substitution degree of 0.3 to 1.0, the stabilizer being at least one selected from the group consisting of a phosphite compound, a hindered phenol compound, a hindered amine compound, and a sulfur compound.

Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

Abstract: There is provided a cellulose acylate film, containing a hindered amin-based compound, wherein the hindered amine-based compound is contained in an amount of 0.001% by mass to 5% by mass based on cellulose acylate, a minimum value of Knoop hardness is 170 N/mm2 to 220 N/mm2, and the Knoop hardness is measured several times by a Knoop indenter, the Knoop indenter is rotated by a given angle in each measurement, and a rotation axis of the Knoop indenter is orthogonal to an upper surface of the cellulose acylate film.

Abstract: A technology is provided which ensures a high security without affecting a plant operation. A plant security managing device includes a determining unit that determines which one of control units multiplexed as a service system and a standby system associated with monitoring and controlling of a plant is the standby system, a security processing unit that performs a security process for detecting the presence/absence of a security abnormality on the control unit that is the standby system, and a change instructing unit that outputs an instruction for changing the control unit that is the standby system and the control unit that is the service system with each other after the completion of the security process by the security processing unit.

Abstract: An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.