Abstract: Disclosed herein is an encryption and decryption communication semiconductor device comprising at least, a communication interface for performing a transfer of data according to a predetermined communication system, one or two or more encryption/decryption circuits which encrypt or decrypt input data in accordance with a predetermined algorithm, and a plurality of external interfaces for performing the input/output of data from and to external devices. The communication interface, the encryption/decryption circuits and the plurality of external interfaces are formed on one semiconductor chip. In the cryption and decryption communication semiconductor device, input data sent from any one of the plurality of external interfaces is encrypted or decrypted by at least one of the encryption/decryption circuits and is capable of being outputted to any different one of the plurality of external interfaces.

Abstract: A wireless LAN system has auto gain control with no work load applied to its baseband processing block. When the wireless LAN system gets ready to receive a signal, the gain control circuit switches between the receiving antennas. The gain control circuit sets gain setting value time divisional data according to the level of a received signal to roughly control the gain to be set in the LAN and the gain to be set in two programmable gain amplifiers.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: In a radio communication system having a plurality of antennas, a reception-system circuit including variable gain amplification circuits for amplifying a signal received from either of the antennas and a frequency conversion circuit for down-converting the received signal to a signal of a lower frequency, and a signal measuring circuit for detecting intensity of the received signal, whereby a signal received by either of the antennas is selected in accordance with a reception state and amplified and demodulated, change rates with time of a signal which is formed by the signal measuring circuit are determined in respect of either of the signals received by the plurality of antennas and a control signal for selecting a reception antenna is generated in accordance with a differences between the change rates.

Abstract: A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel 12. The vacuum vessel has a partitioning wall section 14 for separating the inside thereof into a plasma-generating space 15 and a film deposition process space 16. The partitioning wall section has a plurality of through-holes 25 and diffusion holes 26. An interior space 24 receives the silane or the like fed into the film deposition process space through diffusion holes 16. The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: The invention comprises: processing for receiving an OFDM packet having a preamble and the following data transmission symbol, in which packet the subcarrier interval of the preamble is set wider than that of the data transmission symbol; processing for estimating a DC offset occurring at a receiving side by using the received preamble; processing for correcting the DC offset on the received data transmission symbol, according to the estimation result of the DC offset; and processing for demodulating the DC offset corrected data transmission symbol. Thus, it is possible to estimate a DC offset and then correct the DC offset according to the estimated value, in the OFDM packet with no nul symbol defined there.

Abstract: A CVD vacuum vessel including an electrically conductive partition plate which divides the interior of the vacuum vessel into a plasma generating space and a film-deposition processing space, and an electrically conductive spiral shield. The electrically conductive partition plate has a plurality of through-holes connecting the plasma generating space to the film-deposition processing space and a heater for heating the electrically conductive partition plate. The partitioning plate is mounted to the vacuum vessel by means of a mounting screw such that electrical contact between the partitioning plate and the vacuum vessel is achieved through said spiral shield.

Abstract: The U-shaped base of a U-shaped vibrating element 1 is provided with a transmission rod integrally attached thereto. Further, said transmission rod 2 is attached with a grip portion 3, which in turn is integrally attached with a press member 4 to be pressed against affected areas of patients. Thus constructed, it is possible to provide a tuning fork type therapeutic utensil inexpensive, easy to handle and providing remarkable curing effects not only for the surfaces of the body but also deep and extensively into the body as far as into the osseous tissues.

Abstract: A method of cleaning a CVD vacuum vessel which has an electrically conductive partition plate which divides an interior of the vacuum vessel into a plasma generating space and a film-deposition processing space, and in the electrically conductive partition plate there is a plurality of through-holes connecting the plasma generating space to the film-deposition processing space, the method includes the steps of feeding a cleaning gas into the plasma-generating space; generating active seeds by applying high-frequency electric power to electrodes arranged in the plasma-generating space; feeding the generated active species into the film-deposition processing space through the plurality of through-holes in the electrically conductive partition plate; and cleaning the film-deposition processing space by the active seeds which have been fed into this film-deposition processing space.

Abstract: Disclosed here is a wireless LAN system employed for quick and accurate auto gain controlling with no work load to be applied to its baseband processing block. When the wireless LAN system gets ready to receive a signal, the gain control circuit switches between the receiving antennas alternately. The gain control circuit, when receiving a signal over a predetermined receiving sensitivity, sets gain setting value time divisional data according to the level of the received signal measured by the first measurement circuit to roughly control the gain to be set in the LNA and the gain to be set in the two programmable gain amplifiers provided in the front steps of the LPF/PGA circuits. The gain control circuit then cancels the DC offset while the second measurement circuit measures the signal level.

Abstract: Disclosed herein is a cryption and decryption communication semiconductor device comprising at least, a communication interface for performing a transfer of data according to a predetermined communication system, one or two or more encryption/decryption circuits which encrypt or decrypt input data in accordance with a predetermined algorithm, and a plurality of external interfaces for performing the input/output of data from and to external devices. The communication interface, the encryption/decryption circuits and the plurality of external interfaces are formed on one semiconductor chip. In the cryption and decryption communication semiconductor device, input data sent from any one of the plurality of external interfaces is encrypted or decrypted by at least one of the encryption/decryption circuits and is capable of being outputted to any different one of the plurality of external interfaces.

Abstract: A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing method using helicon wave excited plasma, the source power applied to the plasma generator is set lower than a source power corresponding to a discontinuous change of a characteristic line indicating the dependency of electron density or saturated ion current density on source power.

Abstract: A method of cleaning a CVD vacuum vessel which has an electrically conductive partition plate which divides an interior of the vacuum vessel into a plasma generating space and a film-deposition processing space, and in the electrically conductive partition plate there is a plurality of through-holes connecting the plasma generating space to the film-deposition processing space, the method includes the steps of feeding a cleaning gas into the plasma-generating space; generating active seeds by applying high-frequency electric power to electrodes arranged in the plasma-generating space; feeding the generated active species into the film-deposition processing space through the plurality of through-holes in the electrically conductive partition plate; and cleaning the film-deposition processing space by the active seeds which have been fed into this film-deposition processing space.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel 12. The vacuum vessel has a partitioning wall section 14 for separating the inside thereof into a plasma-generating space 15 and a film deposition process space 16. The partitioning wall section has a plurality of through-holes 25 and diffusion holes 26. An interior space 24 receives the silane or the like fed into the film deposition process space through diffusion holes 16. The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.

Abstract: To suppress the formation of dust particles, prevent the implantation of ions into a substrate and to achieve a good plasma distribution in the vicinity of the substrate when depositing a silicon oxide film using TEOS, for example, by means of CVD on a substrate which has a large surface area, an apparatus in which plasma is generated in the reactor 12 and active species (radicals) are formed and film deposition is carried out on the substrate 11 with this active species and precursor gas in which a partitioning plate 15 in which a plurality of holes 22 has been formed is established.

Abstract: A phase change optical disk in which the thermal conductivity of a first region at an outer peripheral position of the disk is set at a value larger than the minimum value of that of a second region. In the optical disk, in order to provide an output characteristic of a uniform reproduced signal when the disk is rotated at a fixed rotation speed, toward an outer peripheral position thereof, the critical cooling rate of a recording film is set at a larger value or the temperature which the recording film is to reach is set at a lower value. Provided is a method of using the phase change optical disk for recording or erasing information, in which method, the power of the laser beam to be directed to an inner peripheral position of the disk is set larger than that directed to an outer peripheral position thereof.