Abstract: A radiographic image conversion panel includes a support; and a photostimulable phosphor layer provided on the support. A photostimulable phosphor is formed on the support by a vapor phase deposition method and then, heat treatment is performed at a temperature of from 80° C. to 300 ° C.

Abstract: A first semiconductor substrate (3) is so formed as to surround a periphery of a region between an upper substrate (1) and a lower substrate (11) like an outer peripheral frame, a potential drawing portion (31) of the first semiconductor substrate (3) is formed at a corner portion thereof and an area of the corner portion of the first semiconductor substrate (3) including the potential drawing portion (31) is made equal to or less than an area of each of potential drawing portions (36a, 36b, 40) of other semiconductor substrates (5, 7, 9), to achieve reduction in chip size. A conductive layer is formed on a surface of the upper substrate (1) or the like and the conductive layer is fixed to a fixed voltage such as a ground potential. This conductive layer or the like shields the semiconductor substrates against disturbance such as proximity of other substances, static electricity or radio wave hindrance.

Abstract: A radiographic image conversion panel including: a supporting member; a photostimulable phosphor layer provided on the supporting member, surface energy of the photostimulable phosphor layer being in a range of 10 to 50 erg/cm2; and a protection layer for covering the photostimulable phosphor layer.

Abstract: A sensor chip connected to a signal processing IC is provided on a die pad, a stationary electrode and a movable electrode are arranged on a semiconductor substrate of the sensor chip, the stationary electrode and movable electrode are covered with a protective cap, a shield electrode layer is embedded in a top face part of a semiconductor substrate, and these elements are sealed with a sealing resin, thus, a potential of the movable electrode is obtained from an output potential of a capacity/voltage conversion circuit of a signal processing IC, and at least one of the shield electrode layer and protective cap is electrically connected to the movable electrode to thereby make identical to each other in potential.

Abstract: A sensor chip connected to a signal processing IC is provided on a die pad, a stationary electrode and a movable electrode are arranged on a semiconductor substrate of the sensor chip, the stationary electrode and movable electrode are covered with a protective cap, a shield electrode layer is embedded in a top face part of a semiconductor substrate, and these elements are sealed with a sealing resin, thus, a potential of the movable electrode is obtained from an output potential of a capacity/voltage conversion circuit of a signal processing IC, and at least one of the shield electrode layer and protective cap is electrically connected to the movable electrode to thereby make identical to each other in potential.

Abstract: A highly reliable semiconductor device less susceptible to external noise is provided. The semiconductor device has a signal output chip and a substrate. The signal output chip has one or more semiconductors and outputs a predetermined signal. The substrate has a circuit formed thereon and is electrically connected to the signal output chip. A potential of the substrate is fixed to a certain level.

Abstract: An electrostatic capacitance type acceleration sensor, an electrostatic capacitance type angular acceleration sensor and an electrostatic actuator are provided each having a low probability of damage to electrodes even when an excessive acceleration is applied. A movable electrode is provided instead of a fixed electrode conventionally used in the background art to include two movable electrodes. The rigidities of beams of a first movable electrode and a second movable electrode are controlled so that the amounts of movement of the first movable electrode and the second movable electrode are different from each other during application of an acceleration. The acceleration is detected by a change in capacitance between the first movable electrode and the second movable electrode.

Abstract: This invention is nonvolatile memory that has an ordinary memory cell region wherein ordinary data is stored and an erase information storage memory region wherein the information that shows the status of the erase operation is stored. The erase information storage memory region comprises nonvolatile memory that can store the information even when the power is cut. Preferably, the erase information storage memory region can store erase information in the memory block units in which the erase operation is executed. Further preferably, the erase information storage memory region is able to store erase information for at least the three statuses that are involved in erase operations: erase operation start status, preprogramming end status, and erase operation complete status.

Abstract: An electrostatic capacitance type acceleration sensor, an electrostatic capacitance type angular acceleration sensor and an electrostatic actuator are provided each having a low probability of damage to electrodes even when acceleration is applied excessively. A movable electrode is provided instead of a fixed electrode conventionally used in the background art to include two movable electrodes. The rigidities of beams (3) and (6) of a first movable electrode (4) and a second movable electrode (7) are controlled so that the amounts of movement of the first movable electrode (4) and the second movable electrode (7) are different from each other during application of acceleration. Acceleration is detected by the change in capacitance between the first movable electrode (4) and the second movable electrode (7), to thereby realize an electrostatic capacitance type acceleration sensor having a low probability of damage to the electrodes even when acceleration is applied excessively.

Abstract: A sensor substrate (2) is mounted on a signal processing substrate (1), and a sealing resin (3) is so provided as to extend from an edge portion of the sensor substrate (2) onto a main surface of the signal processing substrate (1). The sealing resin (3) is provided over the whole outer peripheral region of the sensor substrate (2), and the sealing resin (3), the sensor substrate (2) and the signal processing substrate (1) define the sealed space (SP). The sensor substrate (2) has a plurality of bumps (21) on its main surface and makes an electrical connection with the signal processing substrate (1) by bonding the bumps (21) to an electrode provided on the main surface of the signal processing substrate (1). With this structure, a semiconductor device which allows reduction in manufacturing cost by omitting a cap which protects moving part of the sensor substrate can be achieved.

Abstract: This invention is nonvolatile memory that has an ordinary memory cell region wherein ordinary data is stored and an erase information storage memory region wherein the information that shows the status of the erase operation is stored. The erase information storage memory region comprises nonvolatile memory that can store the information even when the power is cut. Preferably, the erase information storage memory region can store erase information in the memory block units in which the erase operation is executed. Further preferably, the erase information storage memory region is able to store erase information for at least the three statuses that are involved in erase operations: erase operation start status, preprogramming end status, and erase operation complete status.

Abstract: A manufacturing method produces a semiconductor pressure sensor having a silicon sensor element by electrically connecting a leading frame to the sensor element, and adhering a resin package, e.g., made of PPS resin or PBT resin, for covering the sensor element to the leading frame. Before adhering the package and the leading frame, the manufacturing method applies ultraviolet rays with short wave length to each contact portion of the package and lead frame to improve the adhesive characteristics thereof.

Abstract: A semiconductor sensor is provided with a good temperature characteristic, the sensor being capable of preventing a pressure or acceleration detection characteristic from being affected by a change of the surrounding temperature. A semiconductor chip is provided approximately in the center of a die pad of a lead frame and detects a displacement amount corresponding to a pressure or an acceleration. The displacement amount is converted into an electric signal and output. A resin mold is formed so as to cover the semiconductor chip. A thermal-stress-relieving buffer ring is provided on the die pad so as to surround an external circumference of the semiconductor sensor chip thereby preventing stress caused by thermal expansion/contraction of the resin mold from being directly applied to the semiconductor chip from the side.

Abstract: A method of micromachining a silicon wafer that simultaneously forms narrow gaps having a width of 10 .mu.m or less and wider gap portions using an anistropic etching solution. The etching solution contains KOH in a concentration of 35% or less and the penetration etching is carried out such that the etching of the opposing walls and the face of the silicon wafer occur at the same rate. A method of manufacturing a capacitance-type acceleration detector in a silicon wafer using the aforementioned etching method.

Abstract: The present invention is intended to improve the output characteristics of a capacitance acceleration sensor to increase the stability on the detection accuracy by ensuring that a movable electrode can be displaced while remaining as constantly parallel with stationary electrodes as possible. The invention provides a capacitance acceleration sensor having a frame Fm which constitutes the body of the sensor, a movable electrode 13 which is disposed in the frame Fm and which is supported so as to be capable of being displaced in a specific direction in response to acceleration, and stationary electrodes 12 which are disposed so as to face the movable electrode 13 in the specific direction; and detecting the magnitude of an acceleration acting in the specific direction, on the basis of the change in an electrostatic capacitance caused by the variations in the distances between the electrodes.

Abstract: In an optical circuit mounting structure of the present invention, a surface for mounting an optical circuit is implemented as three separate structural members (1, 2, 3) in the form of aluminum plates. The structural member (1, 2, 3) are connected together by hinges (7, 8). Optical parts (4), splices (5), connectors (6) for external lines and so forth are mounted on the circuit mounting surfaces of the structural members (1, 2, 3). The optical parts (4) are interconnected by optical fibers (9). The fibers (9) and their extra length portions (10) are affixed to the structural members (1, 2, 3) by fiber retainers 11. At the portions where the structural members (1, 2, 3) join each other, the fibers (9) intersect the axes of the hinges (7, 8) at an acute angle. After assemblage and adjustment, the structural members (1, 2, 3) are selectively folded upward and downward by 180 degrees about the associated flanges (7, 8) and then affixed together.

Abstract: A microwave sensor includes a case 1 of an object apparatus in which a discharge may occur; the object apparatus 2; an antenna 3 which is attached to the object apparatus case 1 and receives a microwave signal generated by a discharge; a signal processing unit 4 which is connected to the antenna 3, amplifies and detects the microwave signal, mixes the microwave signal with an oscillating signal, converts the mixed signal to a video signal, and amplifies the video signal; and an output terminal 13 through which the video signal is output.

Abstract: An enplane displacement, electrostatic capacity-type acceleration sensor includes a sensor unit made from a silicon substrate having a displaceable electrode and a fixed electrode, a pair of protective substrates bonded on opposing sides of the sensor unit, and an integrated circuit for detecting acceleration from the electrostatic capacity of the sensor unit. Sensor unit connection electrodes formed for connecting the sensor unit with the integrated circuit are disposed on the side of the sensor unit facing one of the protective substrates. Electrode holes are disposed in one protective substrate which are formed as through-holes in the substrate at positions corresponding to the connection electrodes. The integrated circuit is connected to the protective substrate in which the electrode holes are formed with the connections of the integrated circuit inserted through the electrode holes and electrically connected with the connection electrodes of the sensor unit.

Abstract: A semiconductor acceleration sensor comprises a semiconductor sensor chip for detecting acceleration and an IC chip for processing the signal from this sensor chip, the IC chip is bonded to the sensor chip, the sensor chip is mounted to a die pad, electrical connection is established by lead wires connected to lead terminals, and a package is formed by molding with resin wherein the die pad is electrically connected to a particular lead terminal by a lead wire and is grounded by the particular lead terminal, and the die pad is positioned remote from the mounting surface of the package.

Abstract: A fault sensor device comprising a receiver (3; 3A; 3B) for receiving microwaves (2, 8) radiated from an object to be monitored (1; 1A; 1B; 1C; 1D; 1E; 1F), a detector (4) connected to the receiver (3; 3A; 3B) for converting and outputting the microwaves (2, 8) into a video signal (2S4; 2S21), and a signal processor (5) for converting the video signal (2S4, 2S21) output by the detector (4) into a presentation signal (2S5) and outputting the presentation signal (2S5) to an external presentation device (91; 91A), and for determining whether or not the microwaves (2, 8) received are associated with a fault, based on one of the duration and the frequency of the video signal (2S4; 2S21) and the level of the video signal, and for issuing an alarm signal (2S6) when the determination reveals that the microwaves are associated with the fault.