Patents by Inventor Hiroshi Shinriki

Hiroshi Shinriki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7378358
    Abstract: A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: May 27, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Masanobu Igeta, Shintaro Aoyama, Hiroshi Shinriki
  • Patent number: 7354622
    Abstract: A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate side surface of the shower head.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: April 8, 2008
    Assignees: Tokyo Electron Limited, NEC Corporation
    Inventors: Hiroshi Shinriki, Kenji Matsumoto, Toru Tatsumi
  • Publication number: 20080054472
    Abstract: A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
    Type: Application
    Filed: September 1, 2006
    Publication date: March 6, 2008
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi SHINRIKI, Hiroaki INOUE
  • Publication number: 20070264427
    Abstract: A method for forming a thin film on a substrate using a showerhead includes forming an atomic layer deposition (ALD) film and a chemical vapor deposition (CVD) film continuously, or forming a thermal ALD film and a plasma ALD film continuously, by using a showerhead including an upper compartment and a lower compartment which is disposed underneath and overlapped by the upper compartment as viewed in an axial direction of the showerhead and is not gas-communicated with the upper compartment.
    Type: Application
    Filed: December 19, 2006
    Publication date: November 15, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi SHINRIKI, Junichi ARAMI
  • Patent number: 7273526
    Abstract: A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: September 25, 2007
    Assignee: ASM Japan K.K.
    Inventors: Hiroshi Shinriki, Junichi Arami
  • Publication number: 20070190802
    Abstract: A radical source is movably provided in a processing vessel holding a substrate, and the location or driving energy of the radical source is set such that the film formed on the substrate has a uniform thickness. Further, a radical source is provided at a first side of the substrate and a radical flow is formed such that the radical flow flows from the first side of the substrate surface to the other side. By optimizing the condition of the radical flow, the film formed on the substrate has a uniform thickness.
    Type: Application
    Filed: April 16, 2007
    Publication date: August 16, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: SHINTARO AOYAMA, Hiroshi Shinriki, Masanobu Igeta
  • Publication number: 20070082130
    Abstract: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.
    Type: Application
    Filed: October 7, 2005
    Publication date: April 12, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Akira Shimizu
  • Publication number: 20070082132
    Abstract: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging a reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas containing N and H and then purging the reaction space; (vi) repeating steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer.
    Type: Application
    Filed: March 3, 2006
    Publication date: April 12, 2007
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Akira Shimizu
  • Patent number: 7129185
    Abstract: A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: October 31, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki
  • Patent number: 7125799
    Abstract: A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: October 24, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Shintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki, Tsuyoshi Takahashi
  • Publication number: 20060207724
    Abstract: A dry cleaning process for removing native oxide at improved efficiency is disclosed. The dry cleaning process minimizes the amount of fluorine atoms absorbed on the surface of a processed substrate. Fluorine radicals are provided to the substrate together with hydrogen radicals. The substrate is processed by the reaction of the fluorine radicals and the hydrogen radicals.
    Type: Application
    Filed: May 25, 2006
    Publication date: September 21, 2006
    Inventors: Hiroshi Shinriki, Shintaro Aoyama
  • Publication number: 20060205188
    Abstract: A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.
    Type: Application
    Filed: May 12, 2006
    Publication date: September 14, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masanobu Igeta, Kazuyoshi Yamazaki, Shintaro Aoyama, Hiroshi Shinriki
  • Patent number: 7105362
    Abstract: A method of forming a dielectric film by an organic metal CVD method, comprising the step of supplying an organic metal compound into a treating container having a substrate to be treated held therein to form the dielectric film on the substrate, wherein the dielectric film forming step comprises the first step of depositing, in the treating container, the dielectric film under a first condition so set as to allow the residence time of the organic metal compound to extend to a first value, and the second step of further depositing, after the first step and in the treating container, the dielectric film under a second condition so set as to allow the residence time of the organic metal compound to extend to a second value smaller than the first value.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: September 12, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Takahashi, Hiroshi Shinriki, Kazumi Kubo
  • Patent number: 7105101
    Abstract: A dry cleaning process for removing native oxide at improved efficiency is disclosed. The dry cleaning process minimizes the amount of fluorine atoms absorbed on the surface of a processed substrate. Fluorine radicals are provided to the substrate together with hydrogen radicals. The substrate is processed by the reaction of the fluorine radicals and the hydrogen radicals.
    Type: Grant
    Filed: October 3, 2003
    Date of Patent: September 12, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinriki, Shintaro Aoyama
  • Publication number: 20060174833
    Abstract: It is intended to efficiently nitride an extremely thin oxide film or oxynitride film of 0.4 nm or less thickness while minimizing a film increase. In particular, oxygen radicals are generated through oxygen radical generating unit so as to oxidize a silicon substrate with the generated oxygen radicals, thereby forming an oxide film on the silicon substrate, and further nitrogen radicals are generated through nitrogen radical generating unit so as to nitride the surface of the oxide film, thereby forming an oxynitride film.
    Type: Application
    Filed: December 8, 2003
    Publication date: August 10, 2006
    Applicant: Tokyo Electron Limited
    Inventors: Kazuyoshi Yamazaki, Shintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki
  • Publication number: 20060175011
    Abstract: In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.
    Type: Application
    Filed: July 1, 2003
    Publication date: August 10, 2006
    Inventors: Hiroshi Shinriki, Kazuya Dobashi, Mikio Suzuki, Takashi Magara
  • Patent number: 7037560
    Abstract: A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The film modifying method irradiates a UV ray on ozone to generate active oxygen atoms, thus modifying the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: May 2, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinriki, Masahito Sugiura
  • Publication number: 20060081186
    Abstract: An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.
    Type: Application
    Filed: December 8, 2005
    Publication date: April 20, 2006
    Inventors: Hiroshi Shinriki, Masahito Sugiura
  • Publication number: 20060032445
    Abstract: A substrate processing apparatus capable of efficiently purging not only a process space but also the inside of a processing gas feed nozzle when a multi element compound film is formed on a substrate by laminating a molecular layer thereon, wherein an exhaust line is connected to one end of the processing gas feed nozzle jetting the processing gas in a laminar flow into the process space along the surface of the treated substrate, and the processing gas or purge gas is fed from the other end thereof.
    Type: Application
    Filed: September 23, 2005
    Publication date: February 16, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hiroshi Shinriki, Mikio Suzuki
  • Publication number: 20060009044
    Abstract: A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.
    Type: Application
    Filed: September 19, 2003
    Publication date: January 12, 2006
    Inventors: Masanobu Igeta, Shintaro Aoyama, Hiroshi Shinriki