Abstract: A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.

Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

Abstract: Provided is a semiconductor device in which a boundary region between a transistor portion and a diode portion includes: a first portion which is in contact with the transistor portion and is not provided with a lifetime adjustment region; and a second portion which is in contact with the diode portion and to which the lifetime adjustment region of the diode portion extends, a density distribution of a lifetime killer in a first direction has a lateral slope where a density of the lifetime killer decreases from the second portion of the boundary region toward the first portion, a width of the first portion is smaller than a width of the second portion in the first direction, and the width of the first portion is equal to or larger than a width of the lateral slope in the first direction.

Abstract: Provided is a method for manufacturing a semiconductor device, wherein the method: obtains correlated information indicating relationship between a process condition under which a doping region is formed and a defect evaluation value of the doping region; forms the doping region in a substrate for evaluation under a set first process condition; obtains a measurement value of the defect evaluation value of the substrate for evaluation in which the doping region has been formed; obtains, in the correlated information, the defect evaluation value corresponding to the first process condition as a reference value, and compares the measurement value of the defect evaluation value with the reference value; and adjusts the process condition in a process of manufacturing the semiconductor device by using the substrate for manufacture.

Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

Abstract: Provided is a semiconductor device in which a doping concentration peak of a buffer region has a local maximum at which a doping concentration shows a local maximum value, a lower tail in which the doping concentration monotonously decreases from the local maximum toward a lower surface, and an upper tail in which the doping concentration monotonously decreases from the local maximum toward an upper surface, and at least one of the doping concentration peaks of the buffer region is a gradual concentration peak in which a slope ratio obtained by dividing an absolute value of a slope of the upper tail by an absolute value of a slope of the lower tail is 0.1 or more and 3 or less.

Abstract: Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

Abstract: A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×1015/cm3. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.

Abstract: Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.

Abstract: A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.

Abstract: A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.

Abstract: Provided is a semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a buffer region of the first conductivity type which is provided in a back surface side of the semiconductor substrate relative to the drift region and which includes a first peak of a doping concentration and a second peak of the doping concentration which is provided in a front surface side of the semiconductor substrate relative to the first peak, and a first lifetime control region provided between the first peak and the second peak in a depth direction of the semiconductor substrate. An integrated concentration obtained from an upper end of the drift region to the second peak may be a critical integrated concentration or more in the depth direction of the semiconductor substrate.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

Abstract: Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: Provided is a semiconductor apparatus, wherein a doping concentration distribution in the buffer region has a deepest slope where a doping concentration monotonically decreases to a position where it comes in contact with the drift region in a direction from the lower surface of the semiconductor substrate toward an upper surface, a hydrogen chemical concentration distribution in the buffer region includes in a first depth range provided with the slope: a first decrease portion where a hydrogen chemical concentration decreases toward the upper surface side; a second decrease portion located closer to the upper surface side than the first decrease portion is and where the chemical concentration decreases; and an intermediate portion arranged between the first and second decrease portions, and the intermediate portion has: a flat portion where the distribution is uniform; a peak in a slope of the chemical concentration; or a kink portion of the chemical concentration.

Abstract: Provided is a semiconductor device including: a buffer region having a doping concentration higher than a bulk donor concentration; a first low-concentration hydrogen peak in the buffer region; a second low-concentration hydrogen peak in the buffer region closer to a lower surface than the first low-concentration hydrogen peak; a high-concentration hydrogen peak in the buffer region closer to the lower surface than the second low-concentration hydrogen peak, the high-concentration hydrogen peak having a hydrogen chemical concentration higher than that of the second low-concentration hydrogen peak; and a flat region including a region between the two low-concentration hydrogen peaks and a region including the second low-concentration hydrogen peak, and having a doping concentration higher than a bulk donor concentration, an average value of the doping concentration being equal to or smaller than a local minimum value of a doping concentration between the second low-concentration hydrogen peak and the high-conc

Abstract: Provided is a semiconductor device provided with an IGBT, comprising: a semiconductor substrate having upper and lower surfaces, throughout which bulk donors are distributed; a hydrogen peak including a local maximum arranged 25 ?m or more away from the lower surface of the semiconductor substrate in a depth direction, at which a hydrogen chemical concentration shows a local maximum value; an upper tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface; and a lower tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail; and a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 ?m or more in a direction from the local maximum of the hydrogen peak toward the upper surface.

Abstract: A semiconductor device including: a semiconductor substrate having a first and a second side, and including a donor layer with a doping concentration profile in a depth direction from the first to the second side. The donor layer includes: a first peak, situated at a first distance from the first side of said substrate; a first region adjacent to the first peak and extending in the depth direction from the first peak toward the first side, a second peak in said doping concentration profile, situated at a second distance from the first side of said substrate. Said second distance is less than said first distance and greater than zero; and a second region adjacent to the second peak and extending in the depth direction from the second peak toward the first side of the substrate, which has a doping concentration which is substantially uniform.