Abstract: An electronic device includes: a display section displaying function screens each including a plurality of function setting keys for receiving function settings; a first operation key for displaying the first function screen at the display section; a second operation key for displaying the second function screen at the display section; and a control section displaying, at the display section, the first and second function screens in accordance with operation performed on the first and second operation keys. The control section displays the first and second function screens at the display section when the first and second operation keys have been pressed simultaneously.

Abstract: An electronic device includes: a display section displaying function screens each including a plurality of function setting keys for receiving function settings; a first operation key for displaying the first function screen at the display section; a second operation key for displaying the second function screen at the display section; and a control section displaying, at the display section, the first and second function screens in accordance with operation performed on the first and second operation keys. The control section displays the first and second function screens at the display section when the first and second operation keys have been pressed simultaneously.

Abstract: A semiconductor device according to the present embodiment includes a first wiring part located above a substrate and made of a first metal material. A second wiring part is provided as being superimposed on the first wiring part and having a width substantially equal to that of the first wiring part. A first resistivity of the first wiring part is lower than a second resistivity of the second wiring part when the first and second wiring parts have a first width. The second resistivity is lower than the first resistivity when the first and second wiring parts have a second width larger than the first width. The semiconductor device includes both of an area in which the first and second wiring parts have the first width and an area in which the first and second wiring parts have the second width.

Abstract: A control apparatus for a vehicle including a second clutch capable of switching between input and output shafts connecting state in which a motor-generation is connected. The control apparatus drives the wheels by the motor-generation so a torque transmitted to the wheels does not fluctuate in case the gear shift is executed to the transmission when is in the output shaft connecting state of the second clutch, and synchronizes the input and output shafts at the gear shift by the motor-generation in case the gear shift is executed to the transmission when the second clutch state is in the input shaft connecting state. The second clutch state is switched to the output shaft connecting state when a drive power to the vehicle is equal or less than a value. The second clutch state is switched to the input shaft connecting state when the drive power is greater than the value.

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Abstract: A control apparatus for a vehicle including a second clutch capable of switching between input and output shafts connecting state in which a motor-generation is connected. The control apparatus drives the wheels by the motor-generation so a torque transmitted to the wheels does not fluctuate in case the gear shift is executed to the transmission when is in the output shaft connecting state of the second clutch, and synchronizes the input and output shafts at the gear shift by the motor-generation in case the gear shift is executed to the transmission when the second clutch state is in the input shaft connecting state. The second clutch state is switched to the output shaft connecting state when a drive power to the vehicle is equal or less than a value. The second clutch state is switched to the input shaft connecting state when the drive power is greater than the value.

Abstract: A transmission includes a controller being provided with a change-speed stage anticipator. The controller adopts a time, which one of the transmission's gear-mechanism selectors requires in shifting a current change-speed stage to another change-speed stage, as a pre-shift time for selecting the latter change-speed stage. The change-speed stage anticipator operates the one of the gear-mechanism selectors while adopting a temporary change-speed stage as a subsequent change-speed stage when the temporary change-speed stage, which is estimated from a state of vehicle after the pre-shift time, the state of vehicle being relevant to each element of an anticipated change-speed stage group that is made up of one or more of the change-speed stages that can be selected by the one of the gear-mechanism selectors being set on one of the transmission's input shafts that is disconnected from a power source, coincides with an anticipated change-speed stage that corresponds to the pre-shift time.

Abstract: A sleeve stroke SSt of a specific sleeve is gradually increased from “0” (after t1) in a state in which a vehicle is stopped, a transmission is in a neutral state (all sleeve strokes SSt=0 (original position)), a clutch is in a disengaged state (clutch stroke CSt=0 (original position)), and an engine is operating (engine rotational speed NE>0). Upon determination that the sleeve stroke SSt has reached a predetermined value A, at which synchronization operation of a corresponding synchronization mechanism is performed, the sleeve stroke SSt is fixed to the predetermined value A, and an operation of increasing the clutch stroke CSt from “0” in a press engagement direction is started (time t2). An engagement start point CStlearn of the clutch is obtained based on a change in the rotational speed Ni of an input shaft Ai of the transmission after that (time t3).

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Abstract: A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

Abstract: A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

Abstract: A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

Abstract: A transmission includes a controller that has a rapid-deceleration judge and a rapid-deceleration processor. The rapid-deceleration judge judges whether a vehicle is decelerating rapidly or not. The rapid-deceleration processor includes a torque-fluctuation inhibitor, and an after-rapid-deceleration change-speed stage anticipator. The torque-fluctuation inhibitor shuts off power transmission from a power source, or holds power transmission by way of a current change-speed stage or lower, when the vehicle is decelerating rapidly. The after-rapid-deceleration change-speed stage anticipator anticipates a subsequent change-speed stage being adapted for restarting or reaccelerating the vehicle that has come out of rapid deceleration.

Abstract: A sleeve stroke SSt of a specific sleeve is gradually increased from “0” (after t1) in a state in which a vehicle is stopped, a transmission is in a neutral state (all sleeve strokes SSt=0 (original position)), a clutch is in a disengaged state (clutch stroke CSt=0 (original position)), and an engine is operating (engine rotational speed NE>0). Upon determination that the sleeve stroke SSt has reached a predetermined value A, at which synchronization operation of a corresponding synchronization mechanism is performed, the sleeve stroke SSt is fixed to the predetermined value A, and an operation of increasing the clutch stroke CSt from “0” in a press engagement direction is started (time t2). An engagement start point CStlearn of the clutch is obtained based on a change in the rotational speed Ni of an input shaft Ai of the transmission after that (time t3).

Abstract: An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

Abstract: The present invention provides a new photocatalyst sheet in which the substrates coated with fluorocarbon resin are readily weldable mutually, and also of the high antifouling and water-repellant property by coating the outermost surface of film/fabric structure with fluorocarbon resin containing a photocatalyst and a photocatalyst sheet comprises a substrate (2), a first fluorocarbon resin layer (3) coated on said substrate (2), a second fluorocarbon resin layer (4) coated on said first fluorocarbon resin layer (3), and a third fluorocarbon resin layer (5) containing photocatalyst coated on said second fluorocarbon resin layer (4). The melting point of the first fluorocarbon resin layer (3) may be higher than the melting points of the second and the third fluorocarbon resin layers (4), (5).

Abstract: The present invention provides the photocatalyst sheet and the methods of welding and manufacturing the same, by which the substrate and resin of the photocatalyst-containing layer are not decomposed by photocatalyst particles, mutual welding of sheets is easy, and the photo-redox effect of a photocatalyst can be obtained. A photocatalyst sheet (1b) comprises a substrate (2) such as fiber and coated layers (3) on both sides of the substrate (2), and the coated layer (3) constitutes the photocatalyst-containing layer in which apatite-coated photocatalyst particles (4) are dispersed and fixed with resin. Here, the coated photocatalyst particles (4) on the surface of the photocatalyst-containing layer are so fixed as to have the parts exposed from the surface of the photocatalyst-containing layer.

Abstract: A transmission includes a controller that has a rapid-deceleration judge and a rapid-deceleration processor. The rapid-deceleration judge judges whether a vehicle is decelerating rapidly or not. The rapid-deceleration processor includes a torque-fluctuation inhibitor, and an after-rapid-deceleration change-speed stage anticipator. The torque-fluctuation inhibitor shuts off power transmission from a power source, or holds power transmission by way of a current change-speed stage or lower, when the vehicle is decelerating rapidly. The after-rapid-deceleration change-speed stage anticipator anticipates a subsequent change-speed stage being adapted for restarting or reaccelerating the vehicle that has come out of rapid deceleration.

Abstract: A control apparatus for an automated manual transmission having a plurality of power transmitting units respectively including clutches for connecting and disconnecting a power transmission path between a power source and the automated manual transmission and transmission mechanisms connected to the corresponding clutches so as to transmit a power of the power source, includes a clutch temperature calculating means for calculating a temperature of each of the clutches, and a vehicle moving start controlling means for controlling a moving start of the vehicle so that when the temperature of one of the clutches, calculated by means of the clutch temperature calculating means, is equal to or higher than a predetermined usage restriction threshold value, the other one of the clutches is used so as to transmit the power of the power source to the other one of the power transmission units, having the other one of the clutches.

Abstract: A transmission includes a controller being provided with a change-speed stage anticipator. The controller adopts a time, which one of the transmission's gear-mechanism selectors requires in shifting a current change-speed stage to another change-speed stage, as a pre-shift time for selecting the latter change-speed stage. The change-speed stage anticipator operates the one of the gear-mechanism selectors while adopting a temporary change-speed stage as a subsequent change-speed stage when the temporary change-speed stage, which is estimated from a state of vehicle after the pre-shift time, the state of vehicle being relevant to each element of an anticipated change-speed stage group that is made up of one or more of the change-speed stages that can be selected by the one of the gear-mechanism selectors being set on one of the transmission's input shafts that is disconnected from a power source, coincides with an anticipated change-speed stage that corresponds to the pre-shift time.