Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.

Abstract: A method for fabricating an electronic component, includes forming a seed film above a base body, cooling said seed film, and putting the cooled seed film into a plating solution to perform electro-plating with said seed film being as a cathode.

Abstract: A filter of an electronic display device provides a clear image, the filter comprising an squarylium compound represent by formula (II): wherein R15 and R17 independently represent a hydrogen atom, a halogen atom, substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a nitro group, a cyano group, a hydroxyl group, a substituted or unsubstituted amino group, or a substituted or unsubstituted heterocyclic group; R16 and R18 independently represent an alkoxyalkoxyl-substituted alkyl group; R19 and R20 independently represent a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a nitro group, a cyano group, a hydroxyl group, a substituted or unsubstituted amino group, or a substituted or unsubstituted heterocyclic group; m represents an integer of

Abstract: The present invention provides the photocatalyst sheet and the methods of welding and manufacturing the same, by which the substrate and resin of the photocatalyst-containing layer are not decomposed by photocatalyst particles, mutual welding of sheets is easy, and the photo-redox effect of a photocatalyst can be obtained. A photocatalyst sheet (1b) comprises a substrate (2) such as fiber and coated layers (3) on both sides of the substrate (2), and the coated layer (3) constitutes the photocatalyst-containing layer in which apatite-coated photocatalyst particles (4) are dispersed and fixed with resin. Here, the coated photocatalyst particles (4) on the surface of the photocatalyst-containing layer are so fixed as to have the parts exposed from the surface of the photocatalyst-containing layer.

Abstract: Squarylium-metal chelate compounds as recording materials for optical recording media, and optical recording media using these compounds, which have excellent recording properties, light resistance and storage stability. The squarylium-metal chelate compound is represented by following Structural Formulas (1) and (2): In the formula (1), M represents a metal atom capable of coordinating; “a”, “b” and “c” each represents a squarylium dye ligand of formula (2), where “a” is different from “b”; and “c” may be the same as or different from “a” or “b”; and “m” represents 0 or 1. In the formula (2), R1 and R2 are the same or different and each represents an alkyl group, aralkyl group, aryl group or heterocyclic group, each of which may be substituted; and X represents an aryl group which may be substituted, a heterocyclic group which may be substituted, or Z3=CH—, wherein Z3 represents a heterocyclic group which may be substituted.

Abstract: The present invention provides a new photocatalyst sheet in which the substrates coated with fluorocarbon resin are readily weldable mutually, and also of the high antifouling and water-repellant property by coating the outermost surface of film/fabric structure with fluorocarbon resin containing a photocatalyst and a photocatalyst sheet comprises a substrate (2), a first fluorocarbon resin layer (3) coated on said substrate (2), a second fluorocarbon resin layer (4) coated on said first fluorocarbon resin layer (3), and a third fluorocarbon resin layer (5) containing photocatalyst coated on said second fluorocarbon resin layer (4). The melting point of the first fluorocarbon resin layer (3) may be higher than the melting points of the second and the third fluorocarbon resin layers (4), (5).

Abstract: A process for producing a thermoplastic elastomer composition comprising the step of crosslinking dynamically at least the following components (A) to (C) in the presence of a crosslinking agent: (A) 10 to 50% by weight of an oil-extended ethylene-?-olefin-non-conjugated diene copolymer rubber having a density of 850 to 900 kg/m3, and a Mooney viscosity (ML1+4 100° C.) of 30 to 150, (B) 20 to 60% by weight of an ethylene-?-olefin copolymer having a density of 850 to 910 kg/m3, and a melt flow rate of 0.05 to 80 g/10 minutes measured at 230° C. under a load of 21.18 N, and (C) 20 to 60% by weight of a propylene resin, the total amount of the components (A) to (C) being 100% by weight; and an air-bag cover comprising a thermoplastic elastomer composition produced according to said process.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: A thermoplastic elastomer composition characterized in that the composition comprises a resin component and at least two kinds of rubber components, wherein at least one kind of the rubber components makes a continuous phase and/or a network-like phase, and the remaining at least one kind of the rubber components makes an isolated phase; and a process for producing the same.

Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.

Abstract: The present invention provides a filter of an electronic display device which selectively blocks light with wavelengths that degrade color purity and can provide a clear image, the filter comprising a squarylium compound represented by general formula (I): [wherein R1 represents a hydrogen atom, an alkyl group, or the like; R2, R3 and R4 each represent a hydrogen atom, a halogen atom, an alkyl group, or the like; and X represents a group represented by formula (A): (wherein R5, R6, R7, and R8 represent a hydrogen atom, a halogen atom, an alkyl group, or the like; and R9 and R10 represent a hydrogen atom, an alkyl group, or the like), or the like].

Abstract: An electronic device manufacturing method comprises forming an insulating film above a substrate, forming a to-be-filled region which includes at least one of an interconnection groove and a hole in the insulating film, forming a first conductive film containing a catalyst metal which accelerates electroless plating, so as to line an internal surface of the to-be-filled region, forming a second conductive film on the first conductive film by the electroless plating, so as to line the internal surface of the to-be-filled region via the first conductive film, and forming a third conductive film on the second conductive film by electroplating, so as to fill the to-be-filled region via the first conductive film and the second conductive film.

Abstract: According to one aspect of the present invention, provided is a method of manufacturing a semiconductor device, including: forming a first metal film on a substrate having a recessed portion in a surface thereof, by a plating method so as to bury the first metal film in at least part of the recessed portion; forming a second metal film on the first metal film by a film deposition method different from the plating method, the second metal film including, as a main component, a metal that is a main component of the first metal film and containing an impurity whose concentration is lower than concentration of an impurity contained in the first metal film; heat-treating the first and second metal films; and removing the first and second metal films except portions buried in the recessed portion.

Abstract: A tent fabric comprising a woven fabric made of yarns containing kenaf fibers in an amount of 10 wt. % or more. The tent fabric after use can easily be recycled and hence contributes to resource saving and environmental protection.

Abstract: A substrate processing apparatus and a substrate processing method can appropriately control the charge of a substrate depending on the type of wet processing, thereby reducing defective processing due to static electricity on the surface of the substrate. The substrate processing apparatus includes: a static electricity adjustment section for adjusting static electricity on a substrate; and a wet processing apparatus for carrying out wet processing of the static electricity-adjusted substrate. The static electricity adjustment section removes static electricity from the substrate or charges the substrate into a desired charged state, for example.

Abstract: An optical recording medium includes a substrate and at least a recording layer deposited on or above the substrate, and the recording layer contains at least one formazan-metal chelate compound containing a formazan compound and a metal component; at least one squarylium-metal chelate compound containing a squarylium compound and a metal component; and at least one diarylamine compound.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: The invention provides a photopolymerizable composition having a high photosensitivity, which comprises a metal complex of a squarylium compound, a radical generator, and a compound having at least one ethylenically unsaturated double bond. The photopolymerizable composition of the present invention is advantageously used for a visible laser recording material such as a PS (Presensitized Plate) for laser direct plate-making, a dry film resist, a digital proof, a hologram, or the like, a panchromatic sensitive material (e.g., a sensitive material for a color hologram and a sensitive material used for full-color display and containing a photopolymerizable composition in a microcapsule), paints, adhesives, and so on.

Abstract: According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.

Abstract: An apparatus and a method for processing substrate are generally used for apparatuses for wet-type process of substrate, such as an electrolytic processing apparatus for use in forming interconnects by embedding a metal such as copper (Cu) or the like in fine interconnect patterns (recesses) that are formed in a substrate such as a semiconductor wafer and for use in forming bumps for electrical connections.