Patents by Inventor Hiroshi Toyoshima

Hiroshi Toyoshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6271687
    Abstract: A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the latch circuit, and a current source connected in series to the latch circuit and NMOS transistor pair. The NMOS transistors amplify a small voltage difference of input signals, and the inverters of the latch circuit further amplify the resulting voltage difference to produce the output signals. Based on a small voltage difference of input signals being amplified in two stages and the amplifying circuit being 2-stage serial connection of the current source and the NMOS transistor or CMOS inverter, the delay time of output response can be reduced.
    Type: Grant
    Filed: March 21, 2000
    Date of Patent: August 7, 2001
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.
    Inventors: Hiroshi Toyoshima, Masashige Harada, Tomohiro Nagano, Yoji Nishio, Atsushi Hiraishi, Kunihiro Komiyaji, Hideharu Yahata, Kenichi Fukui, Hirofumi Zushi, Takahiro Sonoda, Haruko Kawachino, Sadayuki Morita
  • Patent number: 6046609
    Abstract: A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the latch circuit, and a current source connected in series to the latch circuit and NMOS transistor pair. The NMOS transistors amplify a small voltage difference of input signals, and the inverters of the latch circuit further amplify the resulting voltage difference to produce the output signals. Based on is a small voltage difference of input signals being amplified in two stages and the amplifying circuit being a 2-stage serial connection of the current source and the NMOS transistor or CMOS inverter, the delay time of output response can be reduced.
    Type: Grant
    Filed: November 10, 1998
    Date of Patent: April 4, 2000
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.
    Inventors: Hiroshi Toyoshima, Masashige Harada, Tomohiro Nagano, Yoji Nishio, Atsushi Hiraishi, Kunihiro Komiyaji, Hideharu Yahata, Kenichi Fukui, Hirofumi Zushi, Takahiro Sonoda, Haruko Kawachino, Sadayuki Morita
  • Patent number: 5930197
    Abstract: A semiconductor memory device is provided which is able to supply data at high speed to a microprocessor (MPU) without being affected by the dispersion of power supply voltage, temperature and production process conditions. A semiconductor chip includes an address buffer, a decoder, a word driver, data lines, a sense amplifier, a main amplifier, an output buffer, and a PLL to which an external clock is applied. The PLL generates controls signals .PHI..sub.1 through .PHI..sub.7 with their phases shifted in turn, and supplies them to those internal circuits ranging from the address buffer to the output buffer. The PLL can control the phases of these control signals to be constant without being affected by the variations of temperature and power supply voltage. Thus, the internal circuits are precharged or equalized by the control signals, and then operated by the control signals to amplify data signal in turn.
    Type: Grant
    Filed: July 28, 1997
    Date of Patent: July 27, 1999
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.
    Inventors: Koichiro Ishibashi, Kunihiro Komiyaji, Kiyotsugu Ueda, Hiroshi Toyoshima
  • Patent number: 5854562
    Abstract: A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the latch circuit, and a current source connected in series to the latch circuit and NMOS transistor pair. The NMOS transistors amplify a small voltage difference of input signals, and the inverters of the latch circuit further amplify the resulting voltage difference to produce the output signals. Based on is a small voltage difference of input signals being amplified in two stages and the amplifying circuit being of 2-stage serial connection of the current source and the NMOS transistor or CMOS inverter, the delay time of output response can be reduced.
    Type: Grant
    Filed: April 15, 1997
    Date of Patent: December 29, 1998
    Assignees: Hitachi, Ltd, Hitachi ULSI Engineering Corp.
    Inventors: Hiroshi Toyoshima, Masashige Harada, Tomohiro Nagano, Yoji Nishio, Atsushi Hiraishi, Kunihiro Komiyaji, Hideharu Yahata, Kenichi Fukui, Hirofumi Zushi, Takahiro Sonoda, Haruko Kawachino, Sadayuki Morita
  • Patent number: 5740115
    Abstract: A semiconductor memory device is provided which is able to supply data at high speed to a microprocessor (MPU) without being affected by the dispersion of power supply voltage, temperature and production process conditions. A semiconductor chip includes an address buffer, a decoder, a word driver, data lines, a sense amplifier, a main amplifier, an output buffer, and a PLL to which an external clock is applied. The PLL generates controls signals .PHI..sub.1 through .PHI..sub.7 with their phases shifted in turn, and supplies them to those internal circuits ranging from the address buffer to the output buffer. The PLL can control the phases of these control signals to be constant without being affected by the variations of temperature and power supply voltage. Thus, the internal circuits are precharged or equalized by the control signals, and then operated by the control signals to amplify data signal in turn.
    Type: Grant
    Filed: July 6, 1995
    Date of Patent: April 14, 1998
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corporation
    Inventors: Koichiro Ishibashi, Kunihiro Komiyaji, Kiyotsugu Ueda, Hiroshi Toyoshima