Abstract: A transistor device includes a field plate extending from a source contact layer and defining an opening above a gate metal layer. Coplanar with the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. Meanwhile, the opening allows a gate runner layer above the field plate to access and connect to the gate metal layer, which helps reduce the resistance of the gate structure. By vertically overlapping the metal gate layer, the field plate, and the gate runner layer, the transistor device may achieve fast switching performance without incurring any size penalty.

Abstract: A transistor device includes a field plate that extends from a source runner layer and/or a source contact layer. The field plate can be coplanar with and/or below a gate runner layer. The gate runner layer is routed away from a region directly above the gate metal layer by a gate bridge, such that the field plate can extend directly above the gate metal layer without being interfered by the gate runner layer. Coplanar with the source runner layer or the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. By vertically overlapping the metal gate layer and the field plate, the disclosed HEMT device may achieve significant size efficiency without additional routings.

Abstract: A transistor device includes a field plate extending from a source contact layer and defining an opening above a gate metal layer. Coplanar with the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. Meanwhile, the opening allows a gate runner layer above the field plate to access and connect to the gate metal layer, which helps reduce the resistance of the gate structure. By vertically overlapping the metal gate layer, the field plate, and the gate runner layer, the transistor device may achieve fast switching performance without incurring any size penalty.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: A manufacturing method of the invention includes: a process of preparing a positive electrode which includes a positive electrode mixture layer, a negative electrode which includes a negative electrode mixture layer, and a non-aqueous electrolyte; and a process of accommodating the positive electrode, the negative electrode, and the non-aqueous electrolyte in a battery case. The non-aqueous electrolyte contains lithium sulfate. In addition, when a BET specific surface area of the negative electrode mixture layer is referred to as X (m2/g) and an addition amount of the lithium sulfate with respect to a total amount of the non-aqueous electrolyte is referred to as Y (mass %), the following relationships are satisfied: 3?X?4.3; 0.02?Y?0.1; and Y/X?0.023.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: A manufacturing method of the invention includes: a process of preparing a positive electrode which includes a positive electrode mixture layer, a negative electrode which includes a negative electrode mixture layer, and a non-aqueous electrolyte; and a process of accommodating the positive electrode, the negative electrode, and the non-aqueous electrolyte in a battery case. The non-aqueous electrolyte contains lithium sulfate. In addition, when a BET specific surface area of the negative electrode mixture layer is referred to as X (m2/g) and an addition amount of the lithium sulfate with respect to a total amount of the non-aqueous electrolyte is referred to as Y (mass %), the following relationships are satisfied: 3?X?4.3; 0.02?Y?0.1; and Y/X?0.023.

Abstract: Provided is a method for manufacturing a nonaqueous electrolyte secondary cell which can maintain and demonstrate an excellent cell characteristic over a long period of time. The method for manufacturing a nonaqueous electrolyte secondary cell provided by the present invention includes: a step of preparing a positive electrode having a positive electrode mix layer and a negative electrode having a negative electrode mix layer; and a step of housing the positive electrode and the negative electrode together with a nonaqueous electrolytic solution in a cell case. The nonaqueous electrolytic solution includes a Compound (I) constituted by lithium tris(oxalate)phosphate. When a BET specific surface area of the negative electrode mix layer is denoted by X (m2/g) and the amount of the Compound (I) added to the entire amount of the nonaqueous electrolytic solution is denoted by Y (% by mass), the following relationships are satisfied: 3?X?4.3; 0.4?Y?1.5; and (Y/X)?0.35.

Abstract: A processing apparatus for performing not only cutting and drawing, but also other processing, and a cartridge used for the processing apparatus are provided. The processing apparatus includes a first cartridge including: a first processing tool to form a machining mark by grinding or cutting a surface of a sheet-like object; an actuator to operate by an external power supply and drive the first processing tool; and a first housing to accommodate the first processing tool where a tip of the first processing tool is exposed and accommodate the actuator. The processing apparatus also includes a carriage including a mounting section which the first cartridge is detachably mounted; a transfer mechanism to move the object and the carriage relatively to each other; and a control circuit to control driving of the transfer mechanism to form the machining mark on the surface of the object by the first processing tool.

Abstract: Provided is a method for manufacturing a nonaqueous electrolyte secondary cell which can maintain and demonstrate an excellent cell characteristic over a long period of time. The method for manufacturing a nonaqueous electrolyte secondary cell provided by the present invention includes: a step of preparing a positive electrode having a positive electrode mix layer and a negative electrode having a negative electrode mix layer; and a step of housing the positive electrode and the negative electrode together with a nonaqueous electrolytic solution in a cell case. The nonaqueous electrolytic solution includes a Compound (I) constituted by lithium tris(oxalate)phosphate. When a BET specific surface area of the negative electrode mix layer is denoted by X (m2/g) and the amount of the Compound (I) added to the entire amount of the nonaqueous electrolytic solution is denoted by Y (% by mass), the following relationships are satisfied: 3?X?4.3; 0.4?Y?1.5; and (Y/X)?0.35.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Provided is a method of manufacturing a lithium secondary battery. This method includes: a step of preparing a positive electrode including a positive electrode mixture layer, a negative electrode including a negative electrode mixture layer, and a nonaqueous electrolyte; and a step of accommodating the positive electrode, the negative electrode, and the nonaqueous electrolyte in a battery case. The nonaqueous electrolyte contains a compound (I) represented by the following formula (I) LiO3S—R—SO3Li (wherein R represents a linear hydrocarbon group having 1 to 10 carbon atoms). When a BET specific surface area of the negative electrode mixture layer is represented by X (m2/g) and when an addition amount of the compound (I) with respect to the total amount of the nonaqueous electrolyte is represented by Y (mass %), the following relationships 3?X?4.3, 0.2?Y?0.4, and (Y/X)?0.093 are satisfied.

Abstract: A manufacturing method of the invention includes: a process of preparing a positive electrode which includes a positive electrode mixture layer, a negative electrode which includes a negative electrode mixture layer, and a non-aqueous electrolyte; and a process of accommodating the positive electrode, the negative electrode, and the non-aqueous electrolyte in a battery case. The non-aqueous electrolyte contains lithium sulfate. In addition, when a BET specific surface area of the negative electrode mixture layer is referred to as X (m2/g) and an addition amount of the lithium sulfate with respect to a total amount of the non-aqueous electrolyte is referred to as Y (mass %), the following relationships are satisfied: 3?X?4.3; 0.02?Y?0.1; and Y/X?0.023.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Provided is a method for producing a non-aqueous electrolyte secondary battery with which resistance increase is inhibited during high-temperature storage while good battery properties are retained. The production method of this invention comprises a step of obtaining a positive electrode, a negative electrode and a non-aqueous electrolyte; and a step of placing the positive electrode, the negative electrode and the non-aqueous electrolyte in a battery case. Herein, the non-aqueous electrolyte comprises a fluorine atom-containing supporting salt and a benzothiophene oxide.

Abstract: A sewing machine includes a needle bar, a needle bar up-and-down movement mechanism, a swinging mechanism, a lower shaft, an outer shuttle, a thread cutting mechanism, a rotation speed adjustment mechanism, and an actuator. The needle bar up-and-down movement mechanism is configured to move the needle bar up and down. The swinging mechanism is configured to swing the needle bar in a left-right direction. The lower shaft is configured to rotate in synchronization with up-down movement of the needle bar. The outer shuttle is configured to rotate along with rotation of the lower shaft. The thread cutting mechanism is configured to cut at least an upper thread. The rotation speed adjustment mechanism is configured to adjust a rotation speed of the outer shuttle. The actuator is a driving source of the thread cutting mechanism and the rotation speed adjustment mechanism.

Abstract: The present invention discloses an improved system for measurement of the liquid flow rate and totalized liquid production of a producing well. In the method of the present invention, liquid production rate in a pumping well is determined by calculation based upon wellbore geometry and continuously monitoring the depth of the fluid level within the wellbore. It is applicable to any pump lifted well where it is possible to shut the pump off periodically. Accuracy is enhanced with this method by properly accounting for pump leakage and where pump leakage is either known or can be estimated within reasonable limits or where it is measured during the pump shut off cycle.

Abstract: An outer peripheral sealing surface of an inner surface of a core plate of a header tank is configured into a loop and extends along an outer peripheral edge portion of the core plate and clamps a packing in cooperation with an outer peripheral end portion of a tank main body of the header tank. A transition section of the outer peripheral sealing surface connects between a primary section and a secondary section, which are located in two different planes, respectively, and the plane of the secondary section is the same as a plane of a boundary portion sealing surface held between two tube connecting surfaces in the core plate.

Abstract: Metal contacts with low contact resistances are formed in a group III-N HEMT by forming metal contact openings in the barrier layer of the group III-N HEMT to have depths that correspond to low contact resistances. The metal contact openings are etched in the barrier layer with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.