Abstract: A charged particle beam reflector device is configured to include at least two electrostatic mirrors arranged with a predetermined interval on a linear optical axis, each having a through hole through which a charged particle beam radiated from an electron gun along a linear optical axis passes, and having a function of reflecting the charged particle beam or allowing the charged particle beam to pass through the through hole in accordance with an applied voltage, and a controller controlling an applied voltage to the at least two electrostatic mirrors. The controller applies, to each of the electrostatic mirrors, a reflection voltage allowing the electrostatic mirrors to reflect the charged particle beam at a predetermined timing so that the charged particle beam from the electron gun is reflected by the at least two electrostatic mirrors a plurality of times.

Abstract: To provide a scanning electron microscope that can detect with high efficiency the secondary electrons generated from the entire surface of a target, in a scanning electron microscope with an objective lens having a retarding electric field near a sample, at least two detectors are arranged with axial symmetry to electron optical axis, a target that causes secondary electrons or reflected electrons to collide with the target is disposed near the detectors, and at least one electrode member having a negative potential lower than a potential of the target is formed almost with axial symmetry to the electron optical axis.

Abstract: The present invention provides a charged particle beam apparatus capable of preventing the charging-up of the specimen without using a large-scale facility. A scanning electron microscope 100 illuminates a specimen 21 with a charged particle beam via a charged particle optical system arranged in a column. According to the present invention, the scanning electron microscope 100 has a charge preventive member 110 disposed between the objective lens 14 and the specimen 21. The charge preventive member 110 has an electrically conductive portion and an opening 113 to transmit the charged particle beam. The charge preventive member 110 is formed so as to partly cover the charged particle optical system when viewed from the charged particle beam irradiation spot on the specimen. In addition, the charge preventive member 110 has gas inflow paths 114 and 115 formed therein. These gas inflow paths have gas injection outlets 116 formed to inject gas toward the charged particle beam irradiation spot on the specimen.

Abstract: A charged particle beam reflector device is configured to include at least two electrostatic mirrors arranged with a predetermined interval on a linear optical axis, each having a through hole through which a charged particle beam radiated from an electron gun along a linear optical axis passes, and having a function of reflecting the charged particle beam or allowing the charged particle beam to pass through the through hole in accordance with an applied voltage, and a controller controlling an applied voltage to the at least two electrostatic mirrors. The controller applies, to each of the electrostatic mirrors, a reflection voltage allowing the electrostatic mirrors to reflect the charged particle beam at a predetermined timing so that the charged particle beam from the electron gun is reflected by the at least two electrostatic mirrors a plurality of times.

Abstract: A sample analyzing apparatus includes: an irradiation system which irradiates a charged particle onto a sample having a concave portion partially on a surface thereof; a light condensing reflecting mirror which condenses luminescence obtained from the surface based on the irradiation of the charged particle; a light detector which detects the luminescence guided to the light condensing reflecting mirror; a charged particle detector which detects the charged particle reflected from the surface of the sample as a reflection charged particle; and a signal processor which controls the irradiation system to irradiate the charged particle intermittently, which obtains a shape of the sample on the basis of a detection signal outputted from the charged particle detector, and which identifies a material of the sample on the basis of an attenuation characteristic of a detection signal outputted from the light detector in a period from a time point in which the intermittent irradiation of the charged particle by the irr

Abstract: To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample.

Abstract: The present invention provides a charged particle beam apparatus capable of preventing the charging-up of the specimen without using a large-scale facility. A scanning electron microscope 100 illuminates a specimen 21 with a charged particle beam via a charged particle optical system arranged in a column. According to the present invention, the scanning electron microscope 100 has a charge preventive member 110 disposed between the objective lens 14 and the specimen 21. The charge preventive member 110 has an electrically conductive portion and an opening 113 to transmit the charged particle beam. The charge preventive member 110 is formed so as to partly cover the charged particle optical system when viewed from the charged particle beam irradiation spot on the specimen. In addition, the charge preventive member 110 has gas inflow paths 114 and 115 formed therein. These gas inflow paths have gas injection outlets 116 formed to inject gas toward the charged particle beam irradiation spot on the specimen.

Abstract: To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample.

Abstract: To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample.

Abstract: To provide a scanning electron microscope that can detect with high efficiency the secondary electrons generated from the entire surface of a target, in a scanning electron microscope with an objective lens having a retarding electric field near a sample, at least two detectors are arranged with axial symmetry to electron optical axis, a target that causes secondary electrons or reflected electrons to collide with the target is disposed near the detectors, and at least one electrode member having a negative potential lower than a potential of the target is formed almost with axial symmetry to the electron optical axis.

Abstract: A scanning electron microscope in the present invention includes an electron source 1 to radiate an electron beam, an objective lens system 9 to focus the radiated electron beam on a sample 10, scanning systems 5, 8 to scan the focused electron beam on the sample, secondary electron detection systems 3,4 to detect secondary electrons emitted from the sample 10, and a secondary electron image displaying system 13 to display a secondary electron image of the sample 10 with a secondary electron detection signal from the secondary electron detection system. The objective lens 9 is composed of first and second objective lenses 11, 12. The first objective lens 11 is mainly excited when using in a wide visual field mode and the second objective lens 12 is mainly excited when using in a high resolution mode.

Abstract: To provide an electron beam system capable of performing three-dimensional measurement of a sample with high precision irrespective of the tilt angle and height of the sample.

Abstract: An electron beam device according to the present invention is made up of an electron beam source for emitting an electron beam, an electron optical system for irradiating the electron beam onto a specimen, a specimen holder for holding the specimen, a specimen tilting section for producing relative tilt angles between the specimen holder and the electron beam, an electron beam detecting section for detecting electron beam emitted from the specimen, and a data correcting section for correcting the three-dimensional detection data to have specified relationship under the condition of a relative tilt angle between the specimen holder and the electron beam.

Abstract: An electron beam device according to the present invention is made up of an electron beam source for emitting an electron beam, an electron optical system for irradiating the electron beam onto a specimen, a specimen holder for holding the specimen, a specimen tilting section for producing relative tilt angles between the specimen holder and the electron beam, an electron beam detecting section for detecting electron beam emitted from the specimen, and a data correcting section for correcting the three-dimensional detection data to have specified relationship under the condition of a relative tilt angle between the specimen holder and the electron beam.

Abstract: A scanning electron microscope system with an electrostatic magnetic field complex objective lens, comprising at least two or more deflection means for tilting a primary electron beam and for projecting the primary electron beam onto a specimen, wherein one of the deflection means is arranged near the objective lens so as to generate a deflection field and also to serve as a compensation field for compensating abaxial aberration at the same time, and abaxial aberration of the primary electron beam deflected by the deflection means is compensated.

Abstract: A scanning electron microscope in the present invention includes an electron source 1 to radiate an electron beam, an objective lens system 9 to focus the radiated electron beam on a sample 10, scanning systems 5, 8 to scan the focused electron beam on the sample, secondary electron detection systems 3,4 to detect secondary electrons emitted from the sample 10, and a secondary electron image displaying system 13 to display a secondary electron image of the sample 10 with a secondary electron detection signal from the secondary electron detection system.

Abstract: A scanning electron microscope comprises: an electron beam source, an electron beam acceleration device for accelerating primary electrons generated by the electron beam source, a deflector 5 for scanning and deflecting the accelerated primary electrons, a magnetic-electrostatic compound objective lens 2, 3 for focusing the scanned and deflected primary electrons onto a specimen 4 mounted on a specimen support, a reflection electron detector 10 for detecting reflection electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, a secondary electron detector 20 for detecting secondary electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, and an image display device for displaying a specimen image from detection signals from each detector 10, 20.

Abstract: A scanning electron microscope system with an electrostatic magnetic field complex objective lens, comprising at least two or more deflection means for tilting a primary electron beam and for projecting the primary electron beam onto a specimen, wherein one of the deflection means is arranged near the objective lens so as to generate a deflection field and also to serve as a compensation field for compensating abaxial aberration at the same time, and abaxial aberration of the primary electron beam deflected by the deflection means is compensated.

Abstract: A scanning electron microscope comprises: an electron beam source, an electron beam acceleration device for accelerating primary electrons generated by the electron beam source, a deflector 5 for scanning and deflecting the accelerated primary electrons, a magnetic-electrostatic compound objective lens 2, 3 for focusing the scanned and deflected primary electrons onto a specimen 4 mounted on a specimen support, a reflection electron detector 10 for detecting reflection electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, a secondary electron detector 20 for detecting secondary electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, and an image display device for displaying a specimen image from detection signals from each detector 10, 20.

Abstract: An electron beam device according to the present invention is made up of an electron beam source for emitting an electron beam, an electron optical system for irradiating the electron beam onto a specimen, a specimen holder for holding the specimen, a specimen tilting section for producing relative tilt angles between the specimen holder and the electron beam, an electron beam detecting section for detecting electron beam emitted from the specimen, and a data correcting section for correcting the three-dimensional detection data to have specified relationship under the condition of a relative tilt angle between the specimen holder and the electron beam.