Abstract: A device including an imaging-type or a projection-type ion detection system and being capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam is provided. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points.

Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Abstract: An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

Abstract: Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

Abstract: According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H3+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H3+.

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

Abstract: To provide a device particularly including an imaging-type or a projection-type ion detection system, not a scanning type such as in a scanning ion microscope, and capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam. To further provide a device capable of performing observation after surface cleaning, which has been difficult in an electron beam device, or a device capable of observing structures and defects in a depth direction.

Abstract: Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Abstract: The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

Abstract: Since a diffraction phenomenon occurs in the electron beam passing through a differential evacuation hole, an electron beam whose probe diameter is narrowed cannot pass through a hole having an aspect ratio of a predetermined value or more, and accordingly, a degree in vacuum on the electron beam side cannot be improved. By providing a differential evacuation hole with a high aspect ratio in an ion beam device, it becomes possible to obtain an observed image on a sample surface, with the sample being placed under the atmospheric pressure or a pressure similar thereto, in a state where the degree of vacuum on the ion beam side is stabilized. Moreover, by processing the differential evacuation hole by using an ion beam each time it is applied, both a normal image observation with high resolution and an image observation under atmospheric pressure or a pressure similar thereto can be carried out.

Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 ?m to 350 ?m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Abstract: Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament.