Abstract: The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage.

Abstract: The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.

Abstract: Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.

Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: It is an object of the present invention to improve the stability of a gas field ionization ion source. A GFIS according to the present invention is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. According to the present invention, it is possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it is possible to reduce the physical vibration of the cooling means. Consequently, it is possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS.

Abstract: A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

Abstract: Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

Abstract: A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.

Abstract: Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

Abstract: A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

Abstract: An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.

Abstract: An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.

Abstract: A method and system for separating and preparing a sample for analysis from a wafer without contaminating the wafer with an element such as Ga. A first ion beam is irradiated on a sample and scanned to fabricate a micro sample from a part of the sample. A probe for separating the micro sample from the sample and a micro-sample stage on which the micro sample is to be placed and held are provided. The first ion beam contains at least one of an inert gas, oxygen and nitrogen as an element. A second ion beam contains an element different from the element of the first ion beam. The separated micro sample is fed to the second ion beam from the apparatus of the first ion beam while being held on the micro-sample stage, and is processed by using the second ion beam.

Abstract: The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.