Abstract: A base steel sheet has a hot-dip galvanized layer formed on a surface thereof, in which, in a steel sheet structure in a range of ? thickness to ? thickness centered around ¼ thickness of a sheet thickness from a surface, a volume fraction of a retained austenite phase is 5% or less, and a total volume fraction of phases of bainite, bainitic ferrite, fresh martensite, and tempered martensite is 40% or more, an average effective crystal grain diameter is 5.0 ?m or less, a maximum effective crystal grain diameter is 20 ?m or less, and a decarburized layer with a thickness of 0.01 ?m to 10.0 ?m is formed on a surface layer portion, in which a density of oxides dispersed in the decarburized layer is 1.0×1012 to 1.0×1016 oxides/m2, and an average grain diameter of the oxides is 500 nm or less.

Abstract: A printed wiring board includes a multilayer body, a first wiring layer formed on first surface of the body and including first pads, a second wiring layer embedded into second surface of the body and including second and third pads, conductor posts formed on the third pads, and via conductors formed in the body and having diameter reducing toward the second surface of the body. Each third pad has metal foil formed thereon such that each post is formed on the foil, the second wiring layer is formed such that the second pads are positioned to connect an electronic component in central portion of the second surface of the body and the third pads are positioned to connect another board in outer edge portion of the second surface of the body, and the second pads are formed such that each second pad has exposed surface recessed from the second surface.

Abstract: A printed wiring board includes a first circuit substrate having first and second surfaces, and a second circuit substrate having third and fourth surfaces such that the first substrate is laminated on the third surface and that the first and third surfaces are opposing each other. The second substrate includes a conductor layer, a first insulating layer including reinforcing material and formed on the conductor layer, and mounting via conductors formed in the first insulating layer and connected to the conductor layer such that the second substrate has a mounting area on the third surface and that the mounting via conductors have via bottoms forming pads positioned to mount an electronic component in the mounting area, and the first substrate includes an insulating layer which does not contain reinforcing material and has an opening through the insulating layer and exposing the via bottoms forming the pads in the mounting area.

Abstract: A printed wiring board includes a first circuit substrate having a first surface and a second surface on the opposite side, and a second circuit substrate having a third surface and a fourth surface on the opposite side such that the first circuit substrate is laminated on the third surface and that the first surface and the third surface are opposing each other. The second circuit substrate has a mounting area on the third surface and includes pads positioned to mount an electronic component in the mounting area and a connection wire structure connected to the pads, and the first circuit substrate includes through-hole conductors extending from the first surface to the second surface and connected to the pads through the connection wire structure and has an opening portion formed through the first circuit substrate such that the opening portion is exposing the pads formed in the mounting area.

Abstract: Steel contains each of C, Si, Mn, P, S, Al, N, O, at a range from ? thickness centered around a ¼ sheet thickness from a surface to ? thickness centered around the ¼ sheet thickness from the surface at a base steel sheet, a structure of the base steel sheet contains, in volume fraction, 3% or more of a retained austenite phase, 50% or less of a ferrite phase, and 40% or more of a hard phase, average dislocation density is 5×1013/m2 or more, solid-solution C amount contained in the retained austenite phase is in mass % 0.70 to 1.00%, X-ray random intensity ratio of FCC iron in an texture of the retained austenite phase is 3.0 or less, ratio between a grain diameter relative to a rolling direction and a grain diameter relative to a sheet width direction of the retained austenite phase is 0.75 to 1.33.

Abstract: A hot-dip galvanizing layer or an alloyed hot dip galvanizing layer is formed on the surface of a base steel sheet in which in volume fraction, 40 to 90% of a ferrite phase and 5% or less of a retained austenite phase are contained, and a ratio of non-recrystallized ferrite to the entire ferrite phase is 50% or less in volume fraction, and further a grain diameter ratio being a value of, of crystal grains in the ferrite phase, an average grain diameter in the rolling direction divided by an average grain diameter in the sheet width direction is 0.75 to 1.33, a length ratio being a value of, of hard structures dispersed in island shapes, an average length in the rolling direction divided by an average length in the sheet width direction is 0.75 to 1.33, and an average aspect ratio of inclusions is 5.0 or less.

Abstract: A base steel sheet has a hot-dip galvanized layer formed on a surface thereof, in which, in a steel sheet structure in a range of ? thickness to ? thickness centered around ¼ thickness of a sheet thickness from a surface, a volume fraction of a retained austenite phase is 5% or less, and a total volume fraction of phases of bainite, bainitic ferrite, fresh martensite, and tempered martensite is 40% or more, an average effective crystal grain diameter is 5.0 ?m or less, a maximum effective crystal grain diameter is 20 ?m or less, and a decarburized layer with a thickness of 0.01 ?m to 10.0 ?m is formed on a surface layer portion, in which a density of oxides dispersed in the decarburized layer is 1.0×1012 to 1.0×1016 oxides/m2, and an average grain diameter of the oxides is 500 nm or less.

Abstract: A base steel sheet has a hot-dip galvanized layer formed on a surface thereof, in which, in a steel sheet structure in a range of ? thickness to ? thickness centered around ¼ thickness of a sheet thickness from a surface, a volume fraction of a retained austenite phase is 5% or less, and a total volume fraction of phases of bainite, bainitic ferrite, fresh martensite, and tempered martensite is 40% or more, an average effective crystal grain diameter is 5.0 ?m or less, a maximum effective crystal grain diameter is 20 ?m or less, and a decarburized layer with a thickness of 0.01 ?m to 10.0 ?m is formed on a surface layer portion, in which a density of oxides dispersed in the decarburized layer is 1.0×1012 to 1.0×1016 oxides/m2, and an average grain diameter of the oxides is 500 nm or less.

Abstract: There is provided a high-strength hot-dip galvanized steel sheet and the like excellent in mechanical cutting property, which are capable of obtaining high ductility while ensuring high strength with maximum tensile strength of 900 MPa or more. The high-strength hot-dip galvanized steel sheet has a sheet thickness of 0.6 to 5.0 mm and has a plating layer on a surface of a steel sheet with component compositions being set in appropriate ranges, in which the steel sheet structure contains a 40 to 90% ferrite phase and a 3% or more retained austenite phase by volume fraction. In the retained austenite phase, a solid solution carbon amount is 0.70 to 1.00%, an average grain diameter is 2.0 ?m or less, an average distance between grains is 0.1 to 5.0 ?m, a thickness of a decarburized layer in a steel sheet surface layer portion is 0.01 to 10.0 ?m, an average grain diameter of oxides contained in the steel, sheet surface layer portion is 30 to 120 nm and an average density thereof is 1.

Abstract: Steel contains each of C, Si, Mn, P, S, Al, N, O, at a range from ? thickness centered around a ¼ sheet thickness from a surface to ? thickness centered around the ¼ sheet thickness from the surface at a base steel sheet, a structure of the base steel sheet contains, in volume fraction, 3% or more of a retained austenite phase, 50% or less of a ferrite phase, and 40% or more of a hard phase, average dislocation density is 5×1013/m2 or more, solid-solution C amount contained in the retained austenite phase is in mass % 0.70 to 1.00%, X-ray random intensity ratio of FCC iron in an texture of the retained austenite phase is 3.0 or less, ratio between a grain diameter relative to a rolling direction and a grain diameter relative to a sheet width direction of the retained austenite phase is 0.75 to 1.33.

Abstract: A hot-dip galvanizing layer or an alloyed hot dip galvanizing layer is formed on the surface of a base steel sheet in which in volume fraction, 40 to 90% of a ferrite phase and 5% or less of a retained austenite phase are contained, and a ratio of non-recrystallized ferrite to the entire ferrite phase is 50% or less in volume fraction, and further a grain diameter ratio being a value of, of crystal grains in the ferrite phase, an average grain diameter in the rolling direction divided by an average grain diameter in the sheet width direction is 0.75 to 1.33, a length ratio being a value of, of hard structures dispersed in island shapes, an average length in the rolling direction divided by an average length in the sheet width direction is 0.75 to 1.33, and an average aspect ratio of inclusions is 5.0 or less.

Abstract: A base steel sheet has a hot-dip galvanized layer formed on a surface thereof, in which, in a steel sheet structure in a range of ? thickness to ? thickness centered around ¼ thickness of a sheet thickness from a surface, a volume fraction of a retained austenite phase is 5% or less, and a total volume fraction of phases of bainite, bainitic ferrite, fresh martensite, and tempered martensite is 40% or more, an average effective crystal grain diameter is 5.0 ?m or less, a maximum effective crystal grain diameter is 20 ?m or less, and a decarburized layer with a thickness of 0.01 ?m to 10.0 ?m is formed on a surface layer portion, in which a density of oxides dispersed in the decarburized layer is 1.0×1012 to 1.0×1016 oxides/m2, and an average grain diameter of the oxides is 500 nm or less.

Abstract: To improve reaction efficiency by increasing a contact area of first and second reactants per unit volume, without reducing dimensions of the inlet paths for the first and second reactants in a layer-thickness direction, a channel includes a first inlet path having the first reactant, a parallel second inlet path separated from the first inlet path and having the second reactant, a junction channel for causing the first and second reactants to join as separate laminar flows, and a parallel reaction channel connected with a downstream side of the junction channel for permitting the laminar flows of the first and second reactants to react at a contact interface thereof. A dimension of the reaction channel in the layer-thickness direction perpendicular to the contact interface is set to be smaller than the sum of the dimensions of the first inlet path and the second inlet path in the layer-thickness direction.

Abstract: A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

Abstract: There is provided a groove machining method by means of water jet which machines grooves by means of a water jet device including injection nozzles for injecting a water jet on a face to be machined of a member to be machined, including a step of disposing protection members which are more resistive against an injection power of the water jet than the member to be machined so as to cover a portion which is a part of the face to be machined, and on which grooves are not to be formed in order to form ends of the machined grooves in a travel direction of the injection nozzles inside an outline of the face to be machined, and a step of moving the nozzles across the protection members and the face to be machined while injecting the water jet at a predetermined injection power from the injection nozzles.

Abstract: A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

Abstract: A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

Abstract: It is aimed to improve reaction efficiency by increasing a contact area of first and second reactants per unit volume without reducing dimensions of an inlet path for the first reactant and an inlet path for the second reactant in a layer-thickness direction. In a reactor, a channel includes a first inlet path having the first reactant introduced thereinto, a second inlet path arranged while being separated from the first inlet path and having the second reactant introduced thereinto, a junction channel for causing the first reactant flowing via the first inlet path and the second reactant flowing via the second inlet path to join in the form of the laminar flows separated from each other, and a reaction channel connected with a downstream side of the junction channel for permitting the laminar flow of the first reactant and that of the second reactant held in contact with each other and reacting the two reactants at a contact interface thereof.

Abstract: The present invention provides microsphere manufacturing method and apparatus capable of stable obtaining microspheres of a desired size and reducing facility cost. According to the method and the apparatus, to manufacture microspheres made of a second liquid in a first liquid, the first liquid is supplied into a first channel to flow therein and the second liquid is supplied to an intermediate part of the first channel through a second channel. The supply velocities of the first and second liquids are set such that the second liquid closes the first channel and the closing part of the second liquid is cut off due to a pressure difference between an upstream side and a downstream side to form microspheres.

Abstract: A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.