Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: A composite semiconductor device includes a substrate; a plurality of circuits formed on the substrate; one or more wiring layers each including a plurality of wiring patterns connected to circuits of the plurality of circuits, a plurality of dummy patterns electrically isolated from the plurality of circuits, and an interlayer dielectric film that is spin-coated directly onto the wiring patterns and onto the dummy patterns, and that is a spin-coated layer, the dummy patterns being formed in areas where the wiring patterns are absent and lying substantially in a plane in which the wiring patterns lie; and a semiconductor thin film layer including semiconductor device elements and disposed on an upper most surface of the one or more wiring layers. The spin-coated layer may be formed of an organic material or an oxide material.

Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: An inclined surface having an inclination angle ? is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface.

Abstract: A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor device includes three-terminal light emitting element array provided on a substrate, which includes a plurality of three-terminal light emitting elements which are substantially linearly arranged. Each three-terminal light emitting elements includes a first, second and third terminals. The third terminal is used to control a current between the first and second terminals. A Lead-out wiring portion is connected to the plurality of three-terminal light emitting elements. The three-terminal light emitting element array includes a common layer provided between two or more three-terminal light emitting elements adjacent to each other. The common layer mutually connects the second terminals (or the third terminals) of the two or three three-terminal light emitting elements.

Abstract: A seat structure capable of dealing with both a normal posture and a resting posture and providing sufficient relaxation in the resting posture while ensuring excellent comfortableness of an occupant. According to the present invention, a back frame 20 itself is fixed to a frame support 10 but a cushion frame 30 shifts from a first position A to a second position B according to an occupant's movement and an inclination angle of a pelvis support 31 increases accordingly. The occupant's pelvis portion and a portion lower than the pelvis portion is moved forward but a part of his or her back above his or her breast is not varied. With this structure, the same effect of the resting posture, that is, the posture in which the back frame is reclined in a conventional seat structure, can be obtained. Since the back is not tilted backward, a leg room (footrest) space in a rear seat is not limited.

Abstract: According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.

Abstract: A control system has a startup start device that generates and outputs a startup start signal that starts a startup of a vehicle based on an operation of starting up the vehicle, a power supply device that supplies power to each unit of the vehicle, a central control unit that generates and outputs to a motor device for driving the vehicle, a startup command signal that starts up the motor device based on the startup start signal, a startup control unit that performs a startup control of the motor device based on the startup command signal, a drive control unit that performs a drive control of a peripheral device configuring the vehicle, a storage unit that stores first data containing initial information of the peripheral device or setting information set in advance, and a data storage control unit that performs the startup control of the motor device by the startup control unit after storing second data indicating, when the operation of starting up the vehicle is performed, a state of the peripheral device

Abstract: A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

Abstract: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

Abstract: A seat control device has a first input unit for performing an operation of moving a first seat to a front side or a back side, a first drive control unit for moving the first seat to the front side or the back side based on an output of the first input unit, a second input unit for performing an operation of moving a second seat, positioned behind the first seat, to the front side or the back side, and a second drive control unit for moving the second seat to the front side or the back side based on an output of the second input unit. A control unit is arranged for prohibiting movement of the first seat and the movement of the second seat from being simultaneously carried out when the operation to move the first seat to the back side is performed at the first input unit and the operation to move the second seat to the front side is performed at the second input unit.

Abstract: A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film.

Abstract: A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: The invention relates to (I) a method for repairing an inner face portion of a pneumatic tire 11, characterized in that a repairing site J in the inner face portion of the pneumatic tire 11 having an innerliner in its inner face portion is repaired by (IA) attaching a thin-film repair member 22 made from a resin having a high air impermeability to the repairing site J with an adhesive 24 or (IB) attaching a thin-film repair member 22 made from a thermoplastic resin having a high air impermeability through solvent welding as well as (II) a repair member 26 for an inner face portion of a pneumatic tire 11, characterized in that the repair member is constructed by bond-laminating a rubber layer 27 made of a vulcanized rubber with a resin layer 28 made from a resin having a high air impermeability and attached to a repairing site J in the inner face portion of the pneumatic tire 11 to repair the repairing site J.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.