Abstract: Field effect transistors and methods of making field effect transistors are provided. The field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a silicon germanium layer in a trench at an upper surface of the semiconductor substrate between the shallow trench isolations; a gate feature on the silicon germanium layer; and metal silicides on the upper potions of silicon germanium layer and semiconductor substrate that are not covered by the gate feature. The silicon germanium layer has a bottom surface and a top surface having a (100) plane and side surfaces having two or more planes.

Abstract: A magnetic tape which comprises a nonmagnetic support, a magnetic layer which is formed on one surface of the nonmagnetic support, and a backcoat layer which comprises a binder and nonmagnetic powder containing carbon black as a component and which is formed on the other surface of the nonmagnetic support, having pits for optical servo formed thereon, characterized in that the average of the reflectance on the flat portion of the backcoat layer is 8.5% or higher, and that the maximum rate of fluctuation of the reflectance on the flat portion, depending on a position of the magnetic tape: [Maximum of absolute value of(Reflectance?Average reflectance)]×100/(Average reflectance) is 10% or lower. This magnetic tape is high in the initial S/N of the servo signal, and also high in the S/N of the servo signal found after the magnetic tape is run twice.

Abstract: A magnetic tape which comprises a nonmagnetic support, a magnetic layer which is formed on one surface of the nonmagnetic support, and a backcoat layer which comprises a binder and nonmagnetic powder containing carbon black as a component and which is formed on the other surface of the nonmagnetic support, having pits for optical servo formed thereon, characterized in that the average of the reflectance on the flat portion of the backcoat layer is 8.5% or higher, and that the maximum rate of fluctuation of the reflectance on the flat portion, depending on a position of the magnetic tape: [Maximum of absolute value of (Reflectance?Average reflectance)]×100/(Average reflectance) is 10% or lower. This magnetic tape is high in the initial S/N of the servo signal, and also high in the S/N of the servo signal found after the magnetic tape is run twice.

Abstract: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

Abstract: In information recording medium of the present invention, a medium unit on which information signals are recorded is placed in an inner space of a main-body case, and an inherent marking for representing specific data for the medium unit is provided on the medium unit.

Abstract: A magnetic tape apparatus includes a feeding unit for feeding a magnetic tape; a take-up unit for taking up the magnetic tape, a magnetic head disposed the downstream of the feeding unit and the upstream of the winding unit, in a traveling path of the magnetic tape from the feeding unit to the take-up unit, and having the moving magnetic tape abut to the magnetic head; a fixed guide unit disposed adjacent to the magnetic head at least in the upstream on downstream of the traveling direction of the magnetic tape traveling on the traveling path toward the magnetic head and guiding the magnetic tape to the traveling path by abutting to the magnetic tape; and a controlling unit disposed on the fixed guide unit for controlling the movement of the magnetic tape in the tape width direction. On a contact surface which abuts on the magnetic tape in the fixed guide unit, there is provided a space for excluding the air lying between the moving magnetic tape and the contact surface.

Abstract: The present invention has an object of providing a substrate processing apparatus and a semiconductor device manufacturing method that can prevent adverse effects on electrical characteristics and provide a thinner EOT. A semiconductor device manufacturing method comprises the steps of: forming a metal oxide film on a silicon substrate, and forming a silicate film by inducing a solid phase reaction between the metal oxide film and the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.

Abstract: A first thermistor 8 and a second thermistor 9 are arranged forwardly and rearwardly of a thermopile sensor 5. A thermopile chip 55 is arranged and interposed between the first thermistor 8 and an integrated thermistor 57. A sensor cover is mounted in contact with front and side portions of a can portion 59 of a thermopile casing 56. A temperature or a radiant quantity of infrared rays on the front portion of the can portion is estimated from a temperature change of the integrated thermistor per second.

Abstract: An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Abstract: The object of the invention is to facilitate the entry of a sensor node and the adoption of a protocol in the existing sensor network system effectively utilizing limited resources of radiocommunication. To achieve the object, the following are provided. A sensor node has a radiocommunication unit that transmits a measured value sensed by a sensor and an identifier of a sensor node as binary measured data. A base station has a radiocommunication controller that receives the measured data from the sensor node, a wire communication controller that transmits the received measured data to a server, a conversion definition information selector that selects conversion definition information corresponding to the identifier included in the measured data out of preset plural conversion definition information and a conversion engine that converts the binary measured data to measured data in a text format based upon the selected conversion definition information.

Abstract: A first thermistor 8 and a second thermistor 9 are arranged forwardly and rearwardly of a thermopile sensor 5. A thermopile chip 55 is arranged and interposed between the first thermistor 8 and an integrated thermistor 57. A sensor cover is mounted in contact with front and side portions of a can portion 59 of a thermopile casing 56. A temperature or a radiant quantity of infrared rays on the front portion of the can portion is estimated from a temperature change of the integrated thermistor per second.

Abstract: Temperature states of a clinical thermometer body and an environment are estimated by temperatures measured by a first temperature sensor integrally formed together with an infrared sensor arranged to the distal end of a probe and a second temperature sensor arranged on the bottom side of a probe holder, and processes suitable for the respective temperature states are performed. An estimation error or the reliability of an estimation value is calculated by the temperatures to notify a user of the estimation error or the reliability by an LCD or the like.

Abstract: The object of the invention is to facilitate the entry of a new type of sensor node and the adoption of a new protocol in the existing sensor network system effectively utilizing limited resources of radiocommunication. To achieve the object, the following are provided. A sensor node has a radiocommunication unit that transmits a measured value sensed by a sensor and an identifier of a sensor node as binary measured data. A base station has a radiocommunication controller that receives the measured data from the sensor node, a wire communication controller that transmits the received measured data to a server, a conversion definition information selector that selects conversion definition information corresponding to the identifier included in the measured data out of preset plural conversion definition information and a conversion engine that converts the binary measured data to measured data in a text format based upon the selected conversion definition information.

Abstract: The present invention is to provide a process for preparing a 3-unsubstituted-5-amino-4-nitrosopyrazole compound represented by the formula (1): wherein R1 represents a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group each of which may have a substituent(s), which comprises cyclizing a 3-hydrazono-2-hydroxyiminopropionitrile compound represented by the formula (2): wherein R1 has the same meaning as defined above, synthetic intermediates thereof and a process for preparing these intermediates.

Abstract: In information recording medium of the present invention, a medium unit on which information signals are recorded is placed in an inner space of a main-body case, and an inherent marking for representing specific data for the medium unit is provided on the medium unit.

Abstract: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

Abstract: An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Abstract: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.