Abstract: A switching power supply includes a noise filter; a bridge rectifying circuit; a smoothing capacitor; a primary winding of a transformer and a switching element; and a control circuit for controlling the switching element. Further, the first reactor and the first diode are connected sequentially in series between one output terminal of the bridge rectifying circuit and one terminal of the smoothing capacitor. The second reactor and the second diode are connected in series between a node that mutually connects the first reactor and the first diode and a node that mutually connects the primary winding and the switching element.

Abstract: A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

Abstract: A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.

Abstract: An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source find a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and +/− 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and +/− 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.

Abstract: The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.

Abstract: A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.

Abstract: There is provided a radiation clinical thermometer which does not require experience and can measure an accurate body temperature easily and quickly since the user recognizes that a probe is correctly directed toward an eardrum. When a measured temperature is in a predetermined range, it is determined that the probe is inserted in an ear, and a level 1 is displayed. When a first maximum value of temperature measurement values appears, a level 2 is displayed. When a second maximum value of temperature measurement values appears, a level 3 is displayed to notify the user of the optimum insertion state for body temperature measurement.

Abstract: An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source and a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and +/− 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and +/− 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.

Abstract: An infrared ray clinical thermometer enhanced in fitted probe cover stability is provided with a simple structure. A mechanism for detecting the presence or absence of a fitted probe cover is provided near the root of a probe, and is mainly composed of a slide member as a movable part, a spring as thrusting means for thrusting the slide member, and a switch for making contact with and departing from the slide member. The slide member is movable disposed in a direction nearly perpendicular to the detaching direction of the probe cover, that is, from the inner side to the outer side, and from the outer side to the inner side of the probe.

Abstract: A radiation thermometer capable of precise measurement without depending upon an absolute precision of an infrared ray sensor for detecting infrared ray or a temperature sensor for measuring a temperature of the infrared ray sensor is provided wherein, controlling means retains a reference temperature for the measurement object, a sensor reference temperature for the sensor, and a sensor reference output for the sensor output when infrared ray radiated from the object of measurement having the object of measurement reference temperature is detected by the infrared ray sensor having the sensor reference temperature, and calculates the temperature of measurement object based on a first difference as a difference between a sensor temperature to be measured by the sensor temperature measuring portion and a sensor reference temperature, a second difference as a difference between a sensor output to be detected by the infrared ray sensor and a sensor reference output and the object of measurement reference temperat

Abstract: A switching power supply includes a noise filter; a bridge rectifying circuit; a smoothing capacitor; a primary winding of a transformer and a switching element; and a control circuit for controlling the switching element. Further, the first reactor and the first diode are connected sequentially in series between one output terminal of the bridge rectifying circuit and one terminal of the smoothing capacitor. The second reactor and the second diode are connected in series between a node that mutually connects the first reactor and the first diode and a node that mutually connects the primary winding and the switching element.

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract: A soldering machine includes a solder vessel, an electromagnetic pump, and a nozzle. The solder vessel stores molten solder, and the electromagnetic pump moves the solder by generating electromagnetic force. The electromagnetic pump is submerged below the liquid surface of the solder. The nozzle ejects the solder in the solder vessel onto an object, such as a printed circuit board. Accordingly, the generated heat from the electromagnetic pump is conducted to the solder in the solder vessel, and the solder can be heated to a higher temperature than in the conventional soldering machine.

Abstract: In an electric characteristic testing process corresponding to a process of the semiconductor apparatus manufacturing processes, in order to test a large area of the electrode pad of the body to be tested in a lump, an electric characteristic testing is performed by pressing a testing structure provided with electrically independent projections having a number equal to a number of conductor portions to be tested formed on an area to be tested of a body to be tested to the body to be tested.

Abstract: A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract: A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

Abstract: An infrared sensor 20 is held in a housing 10 by a sensor holder 28 made of synthetic resin. A waveguide 30 for guiding infrared radiation, which is emitted from a target, to the infrared sensor 20 is supported by waveguide holders 31, 32 made of synthetic resin (or metal). An air layer (insulative layer, gap) 34 resides between an inner end (terminal end) 30b of the waveguide 30 and the infrared sensor 20. A probe 40 made of synthetic resin surrounding an externally protruding portion of the waveguide 30 is provided. An air layer (insulating layer, gap) 33 resides between the tip of the probe 40 and a tip (outer end) 30a of the waveguide 30. The tip of the waveguide 30 is covered by a cap 50.

Abstract: A semiconductor laser having the characteristic of a stable lateral transverse mode and the fabricating method therefor. The method for fabricating a GaN-based semiconductor laser is characterized by comprising the steps of forming a first mask on a first conductive layer composed of an n-type semiconductor, depositing a second conductive layer of a thickness not exceeding the thickness of the first mask, removing the first mask, depositing an n-type cladding layer, depositing optical waveguide layers including at least an active layer, and depositing a p-type cladding layer.

Abstract: In an electric characteristic testing process corresponding to a process of the semiconductor apparatus manufacturing processes, in order to test a large area of the electrode pad of the body to be tested in a lump, an electric characteristic testing is performed by pressing a testing structure provided with electrically independent projections having a number equal to a number of conductor portions to be tested formed on an area to be tested of a body to be tested to the body to be tested.