Abstract: A contact state observation apparatus of golf ball can observe the contact phenomenon between a golf ball and a golf club which has been conventionally hidden and unobservable. The contact state observation apparatus of golf ball includes: launching means for launching a golf ball 10; an impact plate 20 with which the launched golf ball 10 impacts; and imaging means 30, provided opposite to the launching means across the impact plate 20, for shooting an image of the contact state between the golf ball 10 and the impact plate 20 at the time of impact of the golf ball 10. The impact plate 20 has, in a part where the golf ball 10 impacts, an observation hole 21 whose area is smaller than a contact area with the golf ball, and the imaging means 30 shoots the image of the contact state through the observation hole 21.

Abstract: Both a HEMT and a SBD are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a HEMT gate structure region and an anode electrode region. A first laminated structure is formed at least in the HEMT gate structure region, and includes first to third nitride semiconductor layers. A second laminated structure is formed at least in a part of the anode electrode region, and includes first and second nitride semiconductor layers. The anode electrode contacts the front surface of the second nitride semiconductor layer. At least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.

Abstract: A semiconductor device is capable of accurately sensing a temperature of a semiconductor element incorporated in a semiconductor substrate. The semiconductor device includes a temperature sensor. The temperature sensor includes a first nitride semiconductor layer of p-type, a first sense electrode, and a second sense electrode. The first sense electrode and the second sense electrode are located to be capable of passing an electric current between the first sense electrode and the second sense electrode through the first nitride semiconductor layer.

Abstract: An exhaust gas recirculation apparatus includes: a fresh air throttle portion that continues from a fresh air inlet portion and is configured to throttle the flow of fresh air; an inner side tube portion that continues from the fresh air throttle portion, has a tubular shape and has an opening end disposed on a side opposite to the fresh air throttle portion; an exhaust gas inlet portion configured to receive a flow of exhaust gas; a surrounding portion that continues from the exhaust gas inlet portion, surrounds the inner side tube portion, and defines a circumference direction flow path for the exhaust gas extending along an outer circumference surface of the inner side tube portion; and an outlet portion that continues from the surrounding portion, has a tubular shape, and defines a merging flow path configured to receive the flow of the fresh air flowing out from the opening end of the inner side tube portion and the flow of the exhaust gas flowing out from the circumference direction flow path.

Abstract: Both a HEMT and a SBD are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a HEMT gate structure region and an anode electrode region. A first laminated structure is formed at least in the HEMT gate structure region, and includes first to third nitride semiconductor layers. A second laminated structure is formed at least in a part of the anode electrode region, and includes first and second nitride semiconductor layers. The anode electrode contacts the front surface of the second nitride semiconductor layer. At least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.

Abstract: A fixing device includes a heating roller, a non-contact temperature sensor, a first air channel, and a second air channel. The non-contact temperature sensor detects a temperature of the heating roller in a non-contact manner. The first air channel is located between the non-contact temperature sensor and the heating roller. The second air channel is located at a side of the non-contact temperature sensor that is farther from the heating roller. An air velocity in the first air channel is greater than an air velocity in the second air channel.

Abstract: An order management system, of the present invention can eliminate the need to call a waitperson.

Abstract: A fixing device includes a heating roller, a non-contact temperature sensor, a first air channel, and a second air channel. The non-contact temperature sensor detects a temperature of the heating roller in a non-contact manner. The first air channel is located between the non-contact temperature sensor and the heating roller. The second air channel is located at a side of the non-contact temperature sensor that is farther from the heating roller. An air velocity in the first air channel is greater than an air velocity in the second air channel.

Abstract: A switching device provided herewith includes first to fourth semiconductor layers and a gate electrode. The second semiconductor layer is of a first conductive type or an un-dope type and located on the first semiconductor layer. A hetero junction is formed between the first and the second semiconductor layers. The third semiconductor layer is of a second conductive type and located on the second semiconductor layer. The fourth semiconductor layer is of a second conductive type and located on the third semiconductor layer. A hetero junction is formed between the third and the fourth semiconductor layers. The gate electrode electrically connected to the fourth semiconductor layer.

Abstract: A semiconductor device includes a hetero junction structure including an electron transport layer of GaN and an electron supply layer of Inx1Aly1Ga1-x1-y1N (0?x1?1, 0?y1?1, 0?1?x1?y1<1), source and drain electrodes provided above an surface of the electron supply layer, a p-type layer of Inx2Aly2Ga1-x2-y2N (0?x2?1, 0?y2?1, 0?1?x2?y2?1) provided above the surface of the electron supply layer and between the source electrode and the drain electrode, a gate electrode provided to be electrical contact with the p-type layer, and an insulation layer covering at least one of the surface of the electron supply layer exposed between the source electrode and the p-type layer and the surface of the electron supply layer exposed between the drain electrode and the p-type layer, wherein positive charges are fixed in at least a part of the insulation layer.

Abstract: A semiconductor device includes a first compound semiconductor layer, a second compound semiconductor layer having a larger band gap than that of the first compound semiconductor layer, p-type third compound semiconductor layer disposed above a portion of the second compound semiconductor layer, a p-type fourth compound semiconductor layer disposed above the third compound semiconductor layer and having a higher resistance than that of the third compound semiconductor layer, and a gate electrode disposed above the fourth compound semiconductor layer.

Abstract: According to one embodiment, a store system includes: an image output section configured to output an image picked up by an image pickup section; an object recognizing section configured to recognize a specific object by reading a feature value of the output image; a registering section configured to perform sales registration, concerning the recognized object, on the basis of a file that stores information concerning the object and used for the sales registration; and a check-image display section configured to set an image concerning the recognized object in a state viewed from a customer side during counter selling and display the image on a display section together with the information related to the sales registration of the object.

Abstract: An information processing apparatus includes a change unit. The change unit changes, in a case where a defect of a certain control is detected during an audit of a first organization, an audit method for a second organization that has a control equivalent to the certain control.

Abstract: A sheet conveying device includes a conveyance belt, a conveyance plate, an air intake portion, and a charging portion. The conveyance belt has a plurality of belt openings formed in a previously-set suction attraction region in end portions thereof in a width direction perpendicular to a conveyance direction of a sheet, and conveys the sheet. The conveyance plate has a plurality of platen openings formed therein at positions corresponding to the belt openings in the width direction, and is disposed on a back surface side of the conveyance belt. The air intake portion suctions air through the belt openings and the platen openings from the back surface side of the conveyance plate. The charging portion charges a previously-set electrostatic attraction region in a center portion in the width direction of the conveyance belt.

Abstract: Both a HEMT and a SBD are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a HEMT gate structure region and an anode electrode region. A first laminated structure is formed at least in the HEMT gate structure region, and includes first to third nitride semiconductor layers. A second laminated structure is formed at least in a part of the anode electrode region, and includes first and second nitride semiconductor layers. The anode electrode contacts the front surface of the second nitride semiconductor layer. At least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.

Abstract: According to one embodiment, a store system includes: an image output section configured to output an image picked up by an image pickup section; an object recognizing section configured to recognize a specific object by reading a feature value of the output image; a similarity determining section configured to calculate similarity indicating to which degree the recognized object is similar to a reference image of the object determined in advance and determine whether the calculated similarity exceeds a threshold set in advance; and a defective informing section configured to inform, if the similarity determining section determines that the calculated similarity does not exceed the threshold set in advance, that the object is not recognized as a regular commodity.

Abstract: An image forming apparatus includes a conveyor configured to convey a sheet in a first direction; and an image forming portion which uses liquid developer to form an image on the sheet, wherein the image forming portion includes a first transfer unit, which transfers a first image to the sheet, and a second transfer unit, which transfers a second image after the first transfer unit, the first transfer unit includes a first rubbing unit configured to rub the first image on the sheet, and the second transfer unit includes a second rubbing unit configured to rub the second image on the sheet.

Abstract: An SBD is obtained by forming, on a front surface of a substrate in which a first nitride semiconductor layer and a second nitride semiconductor layer are laminated, an anode electrode configured to make Schottky contact and a cathode electrode configured to make Ohmic contact. The anode electrode is made to have a mixture of a portion that is in direct contact with the second nitride semiconductor layer and a portion that is in contact with the second nitride semiconductor layer via a fourth nitride semiconductor layer and a third nitride semiconductor layer. Using a p-type nitride semiconductor as the fourth layer makes it possible to suppress the leakage current. Using, as the third layer, a nitride semiconductor that is wider in band gap than the second nitride semiconductor layer makes it possible to keep down the lowest value of forward voltage at which a forward current flows.

Abstract: A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm?3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

Abstract: A contact state observation apparatus of golf ball can observe the contact phenomenon between a golf ball and a golf club which has been conventionally hidden and unobservable. The contact state observation apparatus of golf ball includes: launching means for launching a golf ball 10; an impact plate 20 with which the launched golf ball 10 impacts; and imaging means 30, provided opposite to the launching means across the impact plate 20, for shooting an image of the contact state between the golf ball 10 and the impact plate 20 at the time of impact of the golf ball 10. The impact plate 20 has, in a part where the golf ball 10 impacts, an observation hole 21 whose area is smaller than a contact area with the golf ball, and the imaging means 30 shoots the image of the contact state through the observation hole 21.