Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: A bonding apparatus can bond contacts of electronic components directly to each other without the need for solder. The bonding apparatus include a hermetically sealed processing chamber, a plurality of bases for holding at least two workpieces having respective bonding regions in the processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller for controlling a predetermined pressure to be developed in the processing chamber, a heater for heating the workpieces in the processing chamber, and a bonding unit for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber.

Abstract: In a magnetic-type needle selection device of a flat knitting machine, a power supply control device controls a current-application interval, during which an electric current is applied to a selector actuator, in accordance with the moving speed of a carriage. The power supply control device is structured so that, when the moving speed of the carriage is high, the current-application interval is lengthened by moving further forward a power-supply starting position than when the moving speed of the carriage is medium. When the moving speed of the carriage is low, the current-application interval is shortened by moving further backward the power-supply starting position and moving further forward a power-supply stopping position than when the moving speed of the carriage is medium.

Abstract: In a magnetic-type needle selection device of a flat knitting machine, a power supply control device controls a current-application interval, during which an electric current is applied to a selector actuator, in accordance with the moving speed of a carriage. The power supply control device is structured so that, when the moving speed of the carriage is high, the current-application interval is lengthened by moving further forward a power-supply starting position than when the moving speed of the carriage is medium. When the moving speed of the carriage is low, the current-application interval is shortened by moving further backward the power-supply starting position and moving further forward a power-supply stopping position than when the moving speed of the carriage is medium.

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: A selector actuator is provided with two controlled attraction parts (5, 6) and three non-controlled attraction parts (7, 8, 9). In the controlled attraction part (5), two magnetic coil poles having attraction sites (16a, 16b) at their top ends are arranged with a magnet in between them. In the non-controlled attraction part (7), three yokes (32a, 32b, 32c) having attraction sites (33a, 33b, 33c) at their top ends are arranged with two permanent magnets (31a, 31b) sandwiched in between them. The controlled attraction part (6) and the non-controlled attraction parts (8, 9) are similarly arranged, respectively. Each magnetic coil pole is arranged to oppose to the ends of two yokes of the same non-controlled attraction part.

Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: A selector actuator is provided with two controlled attraction parts (5, 6) and three non-controlled attraction parts (7, 8, 9). In the controlled attraction part (5), two magnetic coil poles having attraction sites (16a, 16b) at their top ends are arranged with a magnet in between them. In the non-controlled attraction part (7), three yokes (32a, 32b, 32c) having attraction sites (33a, 33b, 33c) at their top ends are arranged with two permanent magnets (31a, 31b) sandwiched in between them. The controlled attraction part (6) and the non-controlled attraction parts (8, 9) are similarly arranged, respectively. Each magnetic coil pole is arranged to oppose to the ends of two yokes of the same non-controlled attraction part.

Abstract: In a knitting member selection actuator (1) of a knitting machine, there is provided between a pair of yokes a magnetic property means (35a, 35b, 45a, 55a, 55b) for making a magnetic reluctance between the confronting yokes (32a, 32b, 42a, 42b, 52a, 52b) of an uncontrolled attraction region (7, 8, 9) larger than a magnetic reluctance between the yokes of the uncontrolled attraction region and the knitting member attracted to attraction surfaces and also smaller than a magnetic reluctance between the yokes of the uncontrolled attraction region and attraction surfaces of the adjacent controlled attraction region (5, 6).

Abstract: In a knitting member selection actuator (1) of a knitting machine, there is provided between a pair of yokes a magnetic property means (35a, 35b, 45a, 55a, 55b) for making a magnetic reluctance between the confronting yokes (32a, 32b, 42a, 42b, 52a, 52b) of an uncontrolled attraction region (7, 8, 9) larger than a magnetic reluctance between the yokes of the uncontrolled attraction region and the knitting member attracted to attraction surfaces and also smaller than a magnetic reluctance between the yokes of the uncontrolled attraction region and attraction surfaces of the adjacent controlled attraction region (5, 6).

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: The plating apparatus has a plating section in which a plating process is performed and a control section for regulating the plating solution. The plating section includes a plating bath containing plating solution, an anode provided in the plating solution, and a plating object serving as a cathode placed in the plating solution opposite the anode. The control section includes a regulating tank for regulating the composition and/or concentration of the plating solution, and a replenishing tank for injecting solution into the plating solution in the regulating tank. The plating apparatus also includes a mechanism for circulating plating solution between the regulating tank in the control section and the plating bath in the plating section. The plating section is installed in a first room, while the control section is installed in a second room, which is separate from the first room Accordingly, contamination in the plating section is prevented.

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Abstract: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and others such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing heating effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Abstract: A compact thin-film deposition apparatus can promote a stable growth of a high quality thin-film product of uniform quality. The apparatus comprises a vacuum-tight deposition chamber enclosing a substrate holding device for holding a substrate. An elevator device for moving the substrate holding device and a gas showering head for flowing a film forming gas towards the substrate are provided. A transport opening and an exhaust opening are provided on a wall section of the deposition chamber at a height corresponding to the transport position and the deposition position, respectively. The deposition chamber is provided with a flow guiding member, and the flow guiding member comprises a cylindrical member to surround an elevating path of the substrate holding device and a first ring member to vertically divide a chamber space at a height between the exhaust opening and the transport opening.

Abstract: The plating apparatus has a plating section in which a plating process is performed and a control section for regulating the plating solution. The plating section includes a plating bath containing plating solution, an anode provided in the plating solution, and a plating object serving as a cathode placed in the plating solution opposite the anode. The control section includes a regulating tank for regulating the composition and/or concentration of the plating solution, and a replenishing tank for injecting solution into the plating solution in the regulating tank. The plating apparatus also includes a mechanism for circulating plating solution between the regulating tank in the control section and the plating bath in the plating section. The plating section is installed in a first room, while the control section is installed in a second room, which is separate from the first room Accordingly, contamination in the plating section is prevented.