Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: An imaging apparatus includes: an imaging sensor that captures an object image formed through an interchangeable lens to generate image data; a driver that performs image blur correction by moving the imaging sensor in a plane perpendicular to an optical axis; and a controller that causes the driver to move the imaging sensor. The controller causes the driver to move the imaging sensor automatically, thereby detecting a movable amount of the imaging sensor that does not cause a vignetting in the captured image at a time when moving the imaging sensor for image blur correction, and causes the driver to move the imaging sensor within a range of the detected movable amount.

Abstract: A steering control device configured to control a steering device, the steering device including a steering shaft to which a handle is detachably coupled and a motor configured to generate torque that is given to the steering shaft. The steering control device includes a processing circuit configured to execute a process for controlling driving of the motor. The process for controlling the driving of the motor includes a lock process of driving the motor such that a rotation position of the steering shaft is fixed at a specific position, in a state where the handle has been detached from the steering shaft.

Abstract: A distal end frame includes: a first distal end frame member that includes a resin molded product which constitutes a molded interconnect device; a housing chamber that is provided on a distal end side of the first distal end frame member, and is formed of a recessed portion a distal end and one side of which are opened; a second distal end frame member that is composed of the resin molded product constituting the molded interconnect device, and is configured to close the one side of the housing chamber; a signal pattern that is the metal pattern formed in a region including a first joining surface which is a joining surface with the second distal end frame member, on a surface of the first distal end frame member; and a solder material which is configured to join the first distal end frame member and the second distal end frame member.

Abstract: To provide an electrode for non-aqueous electrolyte batteries, which traps hydrogen sulfide gas, generated from the inside thereof for some reason, in the electrode, and suppresses the outflow of hydrogen sulfide gas to the outside of the battery. An electrode for lithium ion batteries includes a coating material which contains a silanol group and is present on at least a surface of an active material layer. The active material layer contains a sulfur-based material and a resin-based binder. The sulfur-based material is an active material capable of alloying with lithium metal or an active material capable of occluding lithium ions. The coating material containing the silanol group is a silicate having a siloxane bond or a silica fine particle aggregate having a siloxane bond as a component.

Abstract: In one embodiment, a semiconductor storage device includes a lower electrode layer, a lower insulator, an upper electrode layer and an upper insulator along a first direction. The device further includes a first insulator provided on a side of a second direction of the upper electrode layer, and a second insulator provided between the upper electrode layer and the lower/upper/first insulator. The device further includes a charge storage layer, a third insulator and a semiconductor layer sequentially provided on a side of the second direction of the first insulator. A side face of the first insulator on a side of the upper electrode layer has a convex shape, the charge storage layer includes a first portion having a first thickness, and a second portion having a second thickness less than the first thickness, and the first portion is in contact with the first insulator.

Abstract: A liquid discharge apparatus includes heads to discharge a liquid; caps to contact and move away from the plurality of heads, respectively; individual drain passages communicating with the plurality of caps, respectively; at least one common drain passage communicating with at least two of the individual drain passages; suction devices provided in the individual drain passages, respectively; and a controller. Each of the individual drain passages is to allow and shut off communication between the cap and the common drain passage. The controller causes the individual drain passage to allow the communication between the cap and the common drain passage when performing capping and decapping of the head. The controller caps the sucking target with the cap after shutting off each individual drain passage communicating with the cap corresponding to the head that is not a sucking target.

Abstract: An embroidery device includes a needle including a hole through which a thread has been passed, a dyeing unit configured to dye the thread in different colors, an embroidery unit configured to move the needle to perform a sewing process on a medium with the thread dyed in the different colors by the dyeing unit, and a remover configured to remove the linear member in a vicinity of the needle.

Abstract: A polyphenylene sulfide monofilament has a phenylene sulfide unit as a main structural unit and satisfies (1) to (5): (1) a fineness of 6 to 35 dtex; (2) a breaking strength of 3.4 cN/dtex or more; (3) a breaking elongation of 24% to 45%; (4) a 5% modulus of 1.0 to 1.6 cN/dtex; and (5) a 10% modulus of 1.4 to 2.3 cN/dtex.

Abstract: A liquid discharge device includes a liquid discharge unit that discharges a liquid and a cleaner. The liquid discharge unit has a first end, a second end, and a third end extending in a direction intersecting the first end and the second end. The cleaner moves relative to the liquid discharge unit in a movement direction from the first end toward the second end while contacting the liquid discharge unit with a contact force and a contact pressure. The contact force of the cleaner contacting one of the first end and the second end is smaller than the contact force of the cleaner contacting a portion of the liquid discharge unit other than the first end and the second end.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: A method for manufacturing a molded surface fastener may include using, as a synthetic resin forming the molded surface fastener, a thermoplastic resin having a melt flow rate of 20 g/10 min or more and 60 g/10 min or less and a flexural modulus of 1000 MPa or more and 2300 MPa or less. Consequently, an engaging element in which a top end surface of an engaging head portion is flat, and at least a part of a back-side proximal end surface of the engaging head portion has an angle of 70° or more and 110° or less with respect to a height direction of the stem portion can be stably molded, and thus the molded surface fastener that has a high peel strength and a good texture can be obtained.

Abstract: A plurality of syringes are aligned in a first direction that intersects with a vertical direction while being directed downwardly. A detachment frame has a plate shape in which a through hole into which the plurality of syringes are inserted and is provided to be liftable and lowerable relative to the plurality of syringes. The detachment frame has a first region located at a position lower than a predetermined height threshold value defined with respect to the detachment frame and a second region located at a position higher than the height threshold value in a lower surface, and the first region and second region are arranged alternately in the first direction. In a tip attachment region, a tip is attached to the lower end portion of each of the plurality of syringes that project farther downwardly than the detachment frame through the through hole.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A liquid discharge apparatus includes: a head including a nozzle from which a liquid is discharged; a cap configured to cover a nozzle surface having the nozzle; a first container configured to store a moisturizing liquid; a pump connected to the cap, the pump configured to generate a negative pressure in a space formed between the cap and the nozzle surface; a second container; and a waste liquid path connecting the cap and the second container, and the first container connected to the waste liquid path.

Abstract: A DC power supply device includes a booster circuit generating boosted voltage obtained by boosting DC voltage output from a rectifier circuit and applying the boosted voltage to an inverter circuit, a control unit controlling operation of the booster circuit, and a current detection unit detecting current flowing into and from the inverter circuit. The booster circuit includes a charge accumulation unit including first and second capacitors connected in series and first and second switching elements connected in series. The booster circuit includes a switching unit including backflow prevention elements for preventing backflow of charges from the charge accumulation unit and a current detection unit detecting current flowing into and from the booster circuit. The control unit determines whether to continue driving of an electric motor based on each of detection values of the current detection units.

Abstract: Provided is a molding apparatus used for manufacturing a molded surface fastener wherein a die wheel driving rotationally has a concentric double cylinder structure provided with an outer side cylindrical body that has provided therethrough a plurality of penetrating holes, and an inner side cylindrical body that has formed, in the outer peripheral surface thereof, a plurality of grooved portions, the grooved portions located in the inner side cylindrical body include a use grooved portion that intersects with the penetrating hole of the outer side cylindrical body and a non-use grooved portion that is covered by the inner peripheral surface of the outer side cylindrical body. By using this molding apparatus obtained is a molded surface fastener in which a plurality of types of engaging elements having different shapes in a plan view are arranged cyclically in a reference direction.

Abstract: A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.