Abstract: A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.

Abstract: Provided is a molded surface fastener capable of stably having high engaging strength with respect to a loop member. The molded surface fastener of the present invention includes a base portion and a plurality of engaging elements provided with a stem portion and an engaging portion, and is formed of synthetic resin containing lubricant at 0.15 wt % or more and 1.00 wt % or less. A top end surface of the engaging element is formed to be flat, and the engaging portion has a hanging portion which hangs down obliquely downward toward the base portion.

Abstract: The present invention is a crystal of 3-(3-{[3-(cyclomaltoheptaos-21-O-yl)propyl]amino}-3-oxopropyl)-2-{(1E)-2-[(3E)-3-{(2E)-2-[3-(3-{[3-(cyclomaltoheptaos-21-O-yl)propyl]amino}-3-oxopropyl)-1,1-dimethyl-1,3-dihydro-2H-benzo[e]indo1-2-ylidene]ethylidene}-2-methoxycyclohex-1-en-1-yl]ethen-1-yl}-1,1-dimethyl-1H-benzo [e]indol-3-ium chloride.

Abstract: In a molded surface fastener in which an engaging element includes at least two engaging pawl portions protruded outward, a plurality of the engaging elements is disposed in a line along a machine direction to form an element row, a plurality of the element rows is arranged side by side in a cross direction, each of the engaging elements has, as the engaging pawl portions, at least a pair of symmetrical engaging pawl portions which are disposed each other at symmetrical positions in the cross direction and are respectively protruded in the cross direction sides, and a plurality of the engaging elements is arranged in a staggered pattern. Thereby, the molded surface fastener can appropriately and stably exert desired performance such as peel strength with respect to more types of non-woven fabrics.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Abstract: A liquid discharge device includes a liquid discharge unit that discharges a liquid and a cleaner. The liquid discharge unit has a first end, a second end, and a third end extending in a direction intersecting the first end and the second end. The cleaner moves relative to the liquid discharge unit in a movement direction from the first end toward the second end while contacting the liquid discharge unit with a contact force and a contact pressure. The contact force of the cleaner contacting one of the first end and the second end is smaller than the contact force of the cleaner contacting a portion of the liquid discharge unit other than the first end and the second end.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

Abstract: In this molded surface fastener, an engaging element includes a columnar stem portion, and micro pawl portions protruding outward from an upper end outer peripheral edge of the stem portion in a plan view of the engaging elements. A pawl width dimension of the micro pawl portions is smaller than a line segment connecting two points on the upper end outer peripheral edge of the stem portion. The micro pawl portions protrude toward a base portion. This molded surface fastener has a high peel strength and a shear strength with respect to a female surface fastener.

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

Abstract: In this molded surface fastener, an engaging element includes a columnar stem portion, and micro pawl portions protruding outward from an upper end outer peripheral edge of the stem portion in a plan view of the engaging elements. A pawl width dimension of the micro pawl portions is smaller than a line segment connecting two points on the upper end outer peripheral edge of the stem portion. The micro pawl portions protrude toward a base portion. This molded surface fastener has a high peel strength and a shear strength with respect to a female surface fastener.

Abstract: An embroidery device includes a needle including a hole through which a thread has been passed, a dyeing unit configured to dye the thread in different colors, an embroidery unit configured to move the needle to perform a sewing process on a medium with the thread dyed in the different colors by the dyeing unit, and a remover configured to remove the linear member in a vicinity of the needle.

Abstract: Provided is a molding apparatus used for manufacturing a molded surface fastener wherein a die wheel driving rotationally has a concentric double cylinder structure provided with an outer side cylindrical body that has provided therethrough a plurality of penetrating holes, and an inner side cylindrical body that has formed, in the outer peripheral surface thereof, a plurality of grooved portions, the grooved portions located in the inner side cylindrical body include a use grooved portion that intersects with the penetrating hole of the outer side cylindrical body and a non-use grooved portion that is covered by the inner peripheral surface of the outer side cylindrical body. By using this molding apparatus obtained is a molded surface fastener in which a plurality of types of engaging elements having different shapes in a plan view are arranged cyclically in a reference direction.

Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.

Abstract: A liquid discharge apparatus includes heads to discharge a liquid; caps to contact and move away from the plurality of heads, respectively; individual drain passages communicating with the plurality of caps, respectively; at least one common drain passage communicating with at least two of the individual drain passages; suction devices provided in the individual drain passages, respectively; and a controller. Each of the individual drain passages is to allow and shut off communication between the cap and the common drain passage. The controller causes the individual drain passage to allow the communication between the cap and the common drain passage when performing capping and decapping of the head. The controller caps the sucking target with the cap after shutting off each individual drain passage communicating with the cap corresponding to the head that is not a sucking target.