Abstract: A method of manufacturing a tempered glass sheet of the present invention includes: subjecting a glass sheet to be tempered having a sheet thickness of 2.0 mm or less to ion exchange treatment; and performing heat treatment at a temperature of 50° C. or more and less than a strain point of the glass sheet to be tempered.

Abstract: A method of production of carbamic acid ester has a high yield and high selectivity and is superior in economy. The method of production of a carbamic acid ester includes reacting an amine, carbon dioxide, and an alkoxysilane compound in the presence of a catalyst containing a zinc compound or an alkali metal compound or in the presence of an ionic liquid. A carbamic acid ester is produced, for example by reacting aniline, carbon dioxide, and tetramethoxysilane at a temperature of 150 to 180° C. in the presence of zinc acetate and 2,2?-bipyridine.

Abstract: A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E? of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: Disclosed herein is a semiconductor device including: a support; a double-layered adhesive resin layer formed on the support, an insulating layer and a redistribution layer formed on the adhesive resin layer; a chip layer, and a mold resin layer, wherein the adhesive resin layer includes a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.

Abstract: A resin composition includes: (a) a supported platinum catalyst having a structure shown by the following general formula (1) in which a platinum complex is supported on a surface of an inorganic oxide; and (b) a thermoplastic matrix resin. The resin composition is usable as an addition-reaction catalyst capable of imparting sufficient storability and quick curability to an addition-reaction curable composition. In the formula, L represents a ligand selected from carbon monoxide, an olefin compound, an amine compound, a phosphine compound, an N-heterocyclic carbene compound, a nitrile compound, and an isocyanide compound; and n represents the number of Ls and an integer from 0 to 2.

Abstract: A temporary adhesive material for a wafer processing, used for temporarily bonding a support and a wafer having a circuit-forming front surface and a back surface to be processed, contains a complex temporary adhesive material layer having a three-layered structure that includes a first temporary adhesive layer composed of a non-silicone thermoplastic resin layer capable of releasably adhering to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane polymer layer laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer laminated on the second temporary adhesive layer and capable of releasably adhering to the support. A wafer processing laminate and temporary adhesive material for a wafer processing facilitate temporary adhesion and separation, have excellent CVD resistance, and can increase productivity of thin wafers, and a method manufactures a thin wafer using the same.

Abstract: A metal complex represented by the following Formula (1): (wherein M represents palladium or platinum; L represents a ligand selected from carbon monoxide, an olefin compound, an amine compound, a phosphine compound, an N-heterocyclic carbene compound, a nitrile compound and an isocyanide compound; n represents an integer of 0 to 2 showing the number of the ligand; and each of R1 to R4 represents an organic group). The metal complex described above can be fixed on an inorganic oxide while maintaining a skeletal structure thereof to obtain a supported metal complex, and this makes it possible to allow the supported metal complex to maintain the same catalytic activity as that of the original metal complex. Also, calcining the supported metal complex obtained in the manner described above makes it possible to obtain a supported metal catalyst which is improved in catalytic activity to a greater extent than conventional supported metal catalysts.

Abstract: Under the control of a DDA (data dependent acquisition) execution controller (281), LC/MSn analysis data are acquired with a measurement unit (1) and stored in a measurement data storage section (23). In the case where the MSn analysis is automatically performed, a precursor ion intensity, TIC value and BPC value are also stored and related to the measurement data. In an analysis of the data, a spectrum display condition setter (25) displays, on a display unit (4), a setting window for allowing an analysis operator to enter a precursor ion intensity threshold as well as a product ion intensity threshold which is either the TIC or BPC value, and stores the entered values as a judgment condition in a spectrum display condition storage section (26).

Abstract: A temporary adhesive film roll for substrate processing, includes: a roll axis and a composite film-shaped temporary-adhesive material for temporarily bonding a substrate to a support, the composite film-shaped temporary-adhesive material being rolled up around the roll axis; wherein the composite film-shaped temporary-adhesive material includes a first temporary adhesive layer composed of a thermoplastic resin, a second temporary adhesive layer composed of a thermosetting resin, and a third temporary adhesive layer composed of a thermosetting resin which is different from that of the second temporary adhesive layer.

Abstract: A wafer processing laminate including support, temporary adhesive material layer formed on support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, wherein temporary adhesive material layer includes a three-layered complex temporary adhesive material layer that includes first temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A) having thickness of less than 100 nm and releasably laminated to front surface of wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer (B) releasably laminated to first temporary adhesive layer, and third temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A?) having thickness of less than 100 nm, releasably laminated to second temporary adhesive layer, and releasably laminated to support.

Abstract: Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having R103SiO0.5 unit and SiO2 unit, (A-3) organohydrogenpolysiloxane having two or more Si—H groups per molecule, and (A-4) platinum-based catalyst.

Abstract: A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E? of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A laminate is provided comprising a support, a resin layer, a metal layer, an insulating layer, and a redistribution layer. The resin layer comprises a photo-decomposable resin having light-shielding properties and has a transmittance of up to 20% with respect to light of wavelength 355 nm. The laminate is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A wafer laminate has an adhesive layer (2) sandwiched between a support (1) and a wafer (3), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (2) includes a light-shielding resin layer (2a), an epoxy-containing siloxane skeleton resin layer (2b), and a non-silicone thermoplastic resin layer (2c).

Abstract: A method for easily producing a heterogeneous catalyst having excellent catalytic activity at a low cost is provided. The heterogeneous catalyst is used for the purpose of synthesizing a cyclic carbonate by reacting an epoxide and carbon dioxide. A catalyst obtained by this production method and a method for synthesizing a cyclic carbonate with use of this catalyst are also provided.

Abstract: Disclosed herein is a method for producing silica gel-immobilized phosphonium salt catalysts including the steps of (a) reacting a silane compound with a silica gel in the presence of xylene, to obtain a catalyst precursor having a haloalkyl group or a haloaryl group, wherein the silane compound has a haloalkyl group or a haloaryl group, and a proportion of the silane compound is from 0.001 to 0.

Abstract: An object of the present invention is to provide a method for producing tetraalkoxysilane while saving energy at a high yield. Tetraalkoxysilane can be produced while saving energy at a high yield by the method including a first step of reacting alcohol with carbon dioxide in the presence of a dehydrating agent and/or in a reactor provided with a dehydrating means, and a second step of reacting a reaction mixture obtained in the first step with silicon oxide.

Abstract: To provide a wafer laminate which permits easy bonding between a support and a wafer, permits easy delamination of a wafer from a support, enables enhanced productivity of a thin wafer, and is suited to production of a thin wafer, and for a method of producing the wafer laminate. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer A and a non-silicone thermoplastic resin-coating resin layer B in this order from the support side. The resin layer A is composed of a resin that contains a repeating unit having a condensed ring, and the resin layer B has a storage elastic modulus E? at 25° C. of 1 to 500 MPa and a tensile break strength of 5 to 50 MPa.

Abstract: Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

Abstract: A temporary bonding arrangement for wafer processing is provided comprising a first temporary bond layer (A) of thermoplastic resin, a second temporary bond layer (B) of thermosetting siloxane polymer, and a third temporary bond layer (C) of thermosetting polymer. Layer (B) is cured with a curing catalyst contained in layer (A) which is laid contiguous to layer (B). An adhesive layer of uniform thickness is formed without insufficient step coverage and other failures.