Abstract: The present invention provides an optical system for stereolithography apparatus that enables highly accurate manufacturing by a stereolithography apparatus. An optical system 10 for stereolithography apparatus, includes: a light source 11; an optical scanning section 16 configured to reflect light emitted from the light source 11 to scan to a manufacturing surface IM; and a condenser lens 17 arranged between the optical scanning section 16 and the manufacturing surface IM and configured to condense the light reflected by the optical scanning section 16. When the condenser lens 17 has a focal length f and the condenser lens 17 has a normal angle A at a maximum effective diameter on a surface on a side of the manufacturing surface IM, the optical system 10 for stereolithography apparatus satisfies f?25 mm, 0.3<cos(A).

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Abstract: A radio frequency power supply according to an embodiment is a radio frequency power supply that amplifies an input signal including application timing of a radio frequency magnetic field and waveform information and that supplies the amplified input signal to a radio frequency coil. The radio frequency power supply includes an amplifier and a controlling unit. The amplifier amplifies the input signal and to output an amplified signal. The controlling circuity varies power supply voltage used by the amplifier for the amplification of the input signal, in accordance with the input signal.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element having a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with a through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the electrode is exposed out of the through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of arranging a conductive ball-shaped member in the through hole and electrically connecting the ball-shaped member to the electrode after the third step.

Abstract: A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

Abstract: Uniform shaping is performed. A three-dimensional shaping apparatus includes a laser source, an optical scanner that reflects a laser beam emitted from the laser source to be scanned toward a shaping table, and a condenser lens that is arranged between the optical scanner and the shaping table, and condenses the laser beam reflected by the optical scanner.

Abstract: In a back-illuminated solid-state image pickup device, a first group of charge transfer electrodes (vertical shift register) is present in an imaging region, and a second group of charge transfer electrodes (horizontal shift register) is present in a peripheral region around the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: A radio frequency power supply according to an embodiment is a radio frequency power supply that amplifies an input signal including application timing of a radio frequency magnetic field and waveform information and that supplies the amplified input signal to a radio frequency coil. The radio frequency power supply includes an amplifier and a controlling unit. The amplifier amplifies the input signal and to output an amplified signal. The controlling circuity varies power supply voltage used by the amplifier for the amplification of the input signal, in accordance with the input signal.

Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

Abstract: An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract: Provided is a wiring structural body provided with a wiring pattern including a through-wiring pattern, the wiring structural body including: a silicon substrate having a through hole in which the through-wiring pattern is disposed; an insulating layer provided on a surface of the silicon substrate including an inner surface of the through hole along at least the wiring pattern; a boron layer provided on the insulating layer along the wiring pattern; and a metal layer provided on the boron layer.

Abstract: Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.

Abstract: A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Abstract: In a back-illuminated solid-state image pickup device, first charge transfer electrode groups (vertical shift register) are present in an imaging region, and second charge transfer electrode groups (horizontal shift register) are present in a peripheral region of the imaging region. The light incident surface of the semiconductor substrate 4 corresponding to the peripheral region is etched, and an inorganic light shielding substance SH is filled in the etched region. The amount of the inorganic light shielding substance that evaporates and vaporizes under the vacuum environment is extremely small, and the influence on the imaging by the vaporized gas is small.