Abstract: A concave surface is formed on an object side of a plastic lens of a one-piece construction, and a convex surface is formed on an image-point side thereof. The concave and convex surfaces are aspherical. A diffractive optical surface that exerts a chromatic dispersion ability is formed on the convex surface, and conditional expressions (1) 0.45<L/R<0.95 and (2) ?0.065<L?(1?n)/R?<0.035n are met, where assuming that a position at which a chief ray and an optical axis intersect is regarded as an apparent stop, L denotes a distance to the apparent stop seen from the apex of the convex surface, L? denotes a distance to the apparent stop seen from the apex of the concave surface, R denotes a curvature radius of the convex surface, R? denotes a curvature radius of the concave surface, and n denotes a refractive index of a lens material.

Abstract: An imaging lens with large aperture ratio, high-performance and low-cost is provided, which is applied to an imaging element of a small-size and high resolution, in which aberration is corrected satisfactorily and sufficient diffraction resolution is achieved. An imaging lens includes a first lens, a second lens, a third lens, a fourth lens, and a fifth lens arranged in sequence from an object side, wherein both surfaces of each lens are formed from aspheric surface, a diffraction optics surface exerting chromatic dispersion function is arranged on a surface on an image side of the second lens, each lens is configured from plastic material, and an aperture ratio is equal to or smaller than F/2.4.

Abstract: A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, a plurality of output register units 21 to 24 that receive the charge from the imaging area 10, and a plurality of multiplication register units 31 to 34 that multiply charges from the output registers 21 to 24, respectively, and the multiplication register units 31 to 34 are different in the number of multiplication stages from each other.

Abstract: An imaging lens which can be very compact and thin, corrects various aberrations properly and provides a small F-value and a wide view angle at low cost. In the imaging lens, designed for a solid-state image sensor, arranged in the following order from an object side to an image side are: a first positive (refractive power) lens with a convex object-side surface; a second positive lens; a third positive lens; a fourth positive lens; and a fifth negative lens with a concave image-side surface. None of these lenses is joined to each other and all the lens surfaces are aspheric. The object-side and image-side aspheric surfaces of the fifth lens have a pole-change point in a position other than a point of intersection with an optical axis. A diffractive optical surface is formed on one of three surfaces from the first lens image-side surface to the second lens image-side surface.

Abstract: A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads.

Abstract: An imaging lens includes four lenses arranged in order from the object side to the image side: an aperture stop, positive (refractive power) first lens having a convex object-side surface near the optical axis, second lens having a positive meniscus shape near the axis, positive third lens having a convex image-side surface near the axis, and negative fourth lens having a concave image-side surface near the axis. All lens surfaces are aspheric. The image-side aspheric surface of the fourth lens has a pole-change point off the optical axis and conditional expressions (1) and (2) are satisfied: 0.75<TLA/(2IH)<0.90??(1) 0.90<TLA/f<1.

Abstract: A semiconductor photodetection element SP has a silicon substrate 21 comprised of a semiconductor of a first conductivity type, having a first principal surface 21a and a second principal surface 21b opposed to each other, and having a semiconductor layer 23 of a second conductivity type formed on the first principal surface 21a side; and charge transfer electrodes 25 provided on the first principal surface 21a and adapted to transfer generated charge. In the silicon substrate 21, an accumulation layer 31 of the first conductivity type having a higher impurity concentration than the silicon substrate 21 is formed on the second principal surface 21b side and an irregular asperity 10 is formed in a region opposed to at least the semiconductor region 23, in the second principal surface 21b. The region where the irregular asperity 10 is formed in the second principal surface 21b of the silicon substrate 21 is optically exposed.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.

Abstract: An imaging lens includes, from the object side to the image side, an aperture stop, a first lens with positive refractive power having a convex object-side surface near an optical axis, a second lens with positive refractive power having a convex image-side surface near the axis, a third lens with positive refractive power having a convex image-side surface near the axis, and a fourth lens with negative refractive power having a concave image-side surface near the axis, wherein all lens surfaces are aspheric, all lenses are made of plastic material, a diffractive optical surface is formed on at least one of the lens surfaces from the first lens image-side surface to the second lens image-side surface, and at least one of the three positive lenses satisfies expression (1): 1.58<Ndi??(1) where Ndi: refractive index of the i-th positive lens at d-ray.

Abstract: A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, a multiplication register unit 40 that multiplies the charge from the output register 20, and at least one charge dispersion means 71 that disperses the charge input to the multiplication register unit 40 in a width direction perpendicular to a transfer direction.

Abstract: A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having a plurality of photosensitive regions 7, and a potential gradient forming portion 3 having an electroconductive member 8 arranged opposite to the photosensitive regions 7. A planar shape of each photosensitive region 7 is a substantially rectangular shape. The photosensitive regions 7 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 forms a potential gradient becoming higher along a second direction from one of the short sides to the other of the short sides of the photosensitive regions 7. The electroconductive member 8 includes a first region 8a extending in the second direction and having a first electric resistivity, and a second region 8b extending in the second direction and having a second electric resistivity smaller than the first electric resistivity.

Abstract: An X-ray imaging device 1 includes a back-illuminated solid-state image pickup element 10 including an X-ray detection section having a plurality of detection pixels arrayed for detecting incident X-rays formed on one surface 11 side, and an X-ray incident surface on the other surface 12, and a shielding layer 20 provided on the incident surface 12 of the image pickup element 10 and to be used for blocking light rays with wavelengths longer than the wavelength of X-rays as a detection target. The shielding layer 20 includes a first aluminum layer 21 provided directly on the incident surface 12, a second aluminum layer 22 provided on the first aluminum layer 21, and an ultraviolet light shielding layer 25 that is provided between the first and second aluminum layers 21 and 22 and is used for blocking ultraviolet light rays. Accordingly, an X-ray imaging device capable of suppressing the influence of detection of noise light in X-ray detection is realized.

Abstract: A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.

Abstract: A solid-state imaging device is provided with a plurality of photoelectric converting portions each having a photosensitive region and an electric potential gradient forming region, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions each arranged corresponding to a photoelectric converting portion and on the side of the other short side forming a planar shape of the photosensitive region, and accumulates a charge generated in the photosensitive region of the corresponding photoelectric converting portion, and a shift register which acquires charges respectively transferred from the plurality of buffer gate portions, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion has at least two gate electrodes to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction.

Abstract: A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register.

Abstract: A compact imaging lens suitable for a high pixel density image pickup device which properly corrects chromatic aberration and other types of aberrations and ensures high image quality, low f-number, and low cost. A first lens, second lens, third lens, fourth lens, and fifth lens are arranged in order from the object side and both sides of all the lenses are aspheric surfaces and a diffractive optical surface with a chromatic aberration correction function is formed on one of the surfaces from the object side surface of the first lens to the object side surface of the second lens and on one of the surfaces from the object side surface of the third lens to the object side surface of the fifth lens. All the lenses are made of a plastic material.

Abstract: A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each of the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.

Abstract: In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).

Abstract: A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them.

Abstract: A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3, a plurality of first transferring portions 5, a plurality of charge accumulating portions 7, a plurality of second transferring portions 9, and a shift register 11. Each photoelectric converting portion 3 has a photosensitive region 13 which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 15 which forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region 13. Bach first transferring portion 5 is arranged on the side of the other short side forming the planar shape of the corresponding photosensitive region 13 and transfers a charge acquired from the corresponding photosensitive region 13, in the first direction.