Abstract: [Problem] A compound useful as an active ingredient of a pharmaceutical composition for treating pancreatic cancer is provided. [Solution] The present inventors have studied about a compound that is useful as an active ingredient of a pharmaceutical composition for treating pancreatic cancer and have found that a 4-aminoquinazoline compound has an excellent G12D mutant KRAS inhibition activity and can be used as a therapeutic agent for pancreatic cancer, thus completing the present invention. The 4-aminoquinazoline compound of the present invention or a salt thereof can be used as a therapeutic agent for pancreatic cancer.

Abstract: A semiconductor device includes a first transistor including a normally-on transistor with a first source, a first drain, and a first gate and a second transistor including a normally-off transistor with a second source, a second drain electrically connected to the first source, and a second gate. A first gate signal, which turns on later than a second gate signal at the time of turn-on of the device and turns off earlier than the second gate signal at the time of turn-off of the device, is input to the first gate. The second gate signal, which turns on earlier than the first gate signal at the time of the turn-on and turns off later than the first gate signal at the time of the turn-off, is input to the second gate. An amount of delay of each of the first gate signal and the second gate signal is set independently.

Abstract: A semiconductor element includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first intermediate layer, a second intermediate layer, a source electrode, a drain electrode, and a gate electrode. The band gap of the second semiconductor layer is larger than the band gaps of the first semiconductor layer and the third semiconductor layer. The band gaps of the first intermediate layer and the second intermediate layer that sandwich the second semiconductor layer are larger than the band gap of the second semiconductor layer.

Abstract: A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a multiple quantum well structure including first to fifth barrier layers and first to fourth well layers, and one well layer is sandwiched by two barrier layers. The thickness of the p-type cladding layer 161 is set at less than 3-times the thickness of each of the first to fourth well layer.

Abstract: A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; a light emitting layer alternately laminating plural barrier layers and plural well layers; and a p-type semiconductor layer, wherein the light emitting layer includes three or more well layers and four or more barrier layers, each well layer being sandwiched by the barrier layers, one barrier layer contacting the n-type semiconductor layer, and another barrier layer contacting the p-type semiconductor layer, the well layers include plural n-side well layers from the n-type semiconductor layer side and one p-side well layer on the p-type semiconductor layer side, and a V-shaped concave portion including inclined surfaces is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In in the n-side well layer.

Abstract: While maintaining unity of wavelength of light emitted from a semiconductor light emitting element, decrease of light emission efficiency with an increase in environmental temperature is suppressed. A semiconductor light-emitting element includes: an n-cladding layer; a light emitting layer laminated on the n-cladding layer; and a p-type semiconductor layer laminated on the light emitting layer. The light emitting layer includes a first barrier layer to an eighth barrier layer and a first well layer to a seventh well layer, and a single well layer is sandwiched by two barrier layers. The first well layer to the fifth well layer have a common standard well thickness and a common composition, and the sixth well layer and the seventh well layer are set at a maximum well thickness larger than the common standard well thickness and have a composition whose band gap energy is larger than that of the common composition.

Abstract: In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.

Abstract: A circuit device includes a power supply circuit having a resonance circuit, and a logic circuit. The resonance circuit includes a first coil, and a second coil having a core section shared by the first coil. The logic circuit performs an adiabatic circuit operation with a power supply voltage generated by the resonance circuit.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; a light emitting layer alternately laminating plural barrier layers and plural well layers; and a p-type semiconductor layer, wherein the light emitting layer includes three or more well layers and four or more barrier layers, each well layer being sandwiched by the barrier layers, one barrier layer contacting the n-type semiconductor layer, and another barrier layer contacting the p-type semiconductor layer, the well layers include plural n-side well layers from the n-type semiconductor layer side and one p-side well layer on the p-type semiconductor layer side, and a V-shaped concave portion including inclined surfaces is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In in the n-side well layer.

Abstract: A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a multiple quantum well structure including first to fifth barrier layers and first to fourth well layers, and one well layer is sandwiched by two barrier layers. The thickness of the p-type cladding layer 161 is set at less than 3-times the thickness of each of the first to fourth well layer.

Abstract: In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities.

Abstract: While maintaining unity of wavelength of light emitted from a semiconductor light emitting element, decrease of light emission efficiency with an increase in environmental temperature is suppressed. A semiconductor light-emitting element includes: an n-cladding layer; a light emitting layer laminated on the n-cladding layer; and a p-type semiconductor layer laminated on the light emitting layer. The light emitting layer includes a first barrier layer to an eighth barrier layer and a first well layer to a seventh well layer, and a single well layer is sandwiched by two barrier layers. The first well layer to the fifth well layer have a common standard well thickness and a common composition, and the sixth well layer and the seventh well layer are set at a maximum well thickness larger than the common standard well thickness and have a composition whose band gap energy is larger than that of the common composition.

Abstract: A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength.

Abstract: A circuit device includes: a power supply circuit; and a logic circuit, the power supply circuit supplying a first power supply voltage and a second power supply voltage to the logic circuit, the first power supply voltage supplied by the power supply circuit periodically changing with a first reference voltage as a reference voltage, the second power supply voltage supplied by the power supply circuit periodically changing with a second reference voltage as a reference voltage, the power supply circuit supplying, due to resonance, the first power supply voltage and the second power supply voltage that repeat a first period during which a voltage difference between the first power supply voltage and the second power supply voltage is decreasing and a second period during which the voltage difference is increasing, and the logic circuit performing adiabatic circuit operation with the supply of the first and the second power supply voltage.

Abstract: Provided is a bidirectional DC/DC converter which can control a boost voltage in a wide range. The DC/DC converter includes: three series circuits formed by a first to a sixth switch, each two of which are connected in series between a plus terminal and a minus terminal of a high voltage side; two transformers in which primary windings are connected in series and input terminals of the primary windings are connected to connection points of the switching elements; and a seventh to a tenth switch. The transformers have secondary windings, each of which is divided at the middle point. The middle points are connected to a minus terminal of a low voltage side. Respective terminals of the secondary windings are connected to a plus terminal of the low voltage side by the seventh to the tenth switches.

Abstract: A circuit device includes a power supply circuit having a resonance circuit, and a logic circuit. The resonance circuit includes a first coil, and a second coil having a core section shared by the first coil. The logic circuit performs an adiabatic circuit operation with a power supply voltage generated by the resonance circuit.

Abstract: A circuit device includes: a power supply circuit; and a logic circuit, the power supply circuit supplying a first power supply voltage and a second power supply voltage to the logic circuit, the first power supply voltage supplied by the power supply circuit periodically changing with a first reference voltage as a reference voltage, the second power supply voltage supplied by the power supply circuit periodically changing with a second reference voltage as a reference voltage, the power supply circuit supplying, due to resonance, the first power supply voltage and the second power supply voltage that repeat a first period during which a voltage difference between the first power supply voltage and the second power supply voltage is decreasing and a second period during which the voltage difference is increasing, and the logic circuit performing adiabatic circuit operation with the supply of the first and the second power supply voltage.

Abstract: Provided is a bidirectional DC/DC converter which can control a boost voltage in a wide range. The DC/DC converter includes: three series circuits formed by a first to a sixth switch, each two of which are connected in series between a plus terminal and a minus terminal of a high voltage side; two transformers in which primary windings are connected in series and input terminals of the primary windings are connected to connection points of the switching elements; and a seventh to a tenth switch. The transformers have secondary windings, each of which is divided at the middle point. The middle points are connected to a minus terminal of a low voltage side. Respective terminals of the secondary windings are connected to a plus terminal of the low voltage side by the seventh to the tenth switches.

Abstract: An object of the present invention is to provide a method for producing a gallium nitride-based compound semiconductor multilayer structure useful for the production of a gallium nitride-based compound semiconductor light-emitting device which can ensure that the operating voltage is reduced, the light emission output is good and the light emission output is less changed due to aging.