Patents by Inventor Hitoshi Noguchi

Hitoshi Noguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8164857
    Abstract: The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 ?m2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, and the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: April 24, 2012
    Assignee: FUJIFILM Corporation
    Inventors: Hitoshi Noguchi, Osamu Shimizu, Yasushi Endo
  • Publication number: 20120085573
    Abstract: A problem to be solved is to suppress deterioration of insulating properties in a stacked structure with a dielectric film formed by powder spraying coating process, and in a method of manufacturing the stacked structure. In a stacked structure according to the present invention, a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes an underlying layer 31 formed by applying a dispersion solution containing dielectric particles onto the first conductive layer 1, and a dielectric film 32 formed on the underlying layer 31 by powder spraying coating process. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3.
    Type: Application
    Filed: May 7, 2010
    Publication date: April 12, 2012
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Hitoshi Noguchi, Naoki Tanaka, Tatsuya Nakamura
  • Publication number: 20120069487
    Abstract: [Problem to be Solved] A problem to be solved is to provide a stacked structure and a method of manufacturing the same that make generation of insulation breakdown unlikely, while providing a high dielectric constant and a high quality. [Means for Solving Problem] A stacked structure according to the present invention is a stacked structure in which a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes a dielectric film 31 formed on the first conductive layer 1, and a dielectric particle film 32 formed by applying a dispersion solution containing dielectric particles onto the dielectric film 31. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3.
    Type: Application
    Filed: May 7, 2010
    Publication date: March 22, 2012
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Hitoshi Noguchi, Naoki Tanaka, Tatsuya Nakamura
  • Publication number: 20110315074
    Abstract: An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate. A single-crystal diamond growth base material on which single-crystal diamond is grown comprises at least: a base substrate consisting of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10?6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.
    Type: Application
    Filed: June 13, 2011
    Publication date: December 29, 2011
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hitoshi NOGUCHI, Shozo SHIRAI
  • Publication number: 20110084285
    Abstract: The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.
    Type: Application
    Filed: September 17, 2010
    Publication date: April 14, 2011
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi NOGUCHI
  • Publication number: 20110081531
    Abstract: The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.
    Type: Application
    Filed: September 7, 2010
    Publication date: April 7, 2011
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi NOGUCHI
  • Publication number: 20100294196
    Abstract: The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)?50 ?m. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.
    Type: Application
    Filed: April 26, 2010
    Publication date: November 25, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi Noguchi
  • Patent number: 7764360
    Abstract: A fuel property sensor is provided with three bypass passages and a measure passage. The measure passage is located inside of a closed loop which is comprised of common tangential lines of adjacent bypass passages and a part of profile line of each bypass passage in a cross section perpendicular to the measure passage. Even if the fuel property sensor is rotated around the axis of a fuel pipe in assembling the fuel property sensor to the fuel pipe, at least one of two bypass passages is always located above the measure passage in a vertical direction. Hence, bubbles included in the fuel are restricted from flowing into the measure passage. The fuel property sensor can detect the concentration of ethanol contained in the fuel with high accuracy.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: July 27, 2010
    Assignees: Denso Corporation, Nippon Soken, Inc., Toyota Jidosha Kabushiki Kaisha
    Inventors: Hitoshi Noguchi, Rie Osaki, Hiroshi Nakamura, Hitoshi Uda, Yukihiro Tsukasaki, Hiroki Ichinose
  • Publication number: 20100178730
    Abstract: The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained.
    Type: Application
    Filed: January 4, 2010
    Publication date: July 15, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi Noguchi
  • Publication number: 20100178234
    Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.
    Type: Application
    Filed: January 4, 2010
    Publication date: July 15, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi Noguchi
  • Publication number: 20100175613
    Abstract: The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost.
    Type: Application
    Filed: November 23, 2009
    Publication date: July 15, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi Noguchi
  • Patent number: 7628856
    Abstract: There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.
    Type: Grant
    Filed: March 2, 2007
    Date of Patent: December 8, 2009
    Assignees: Shin-Etsu Chemical Co., Ltd., AGD Material Co.
    Inventors: Atsuhito Sawabe, Hitoshi Noguchi, Shintaro Maeda
  • Publication number: 20090098414
    Abstract: The present invention relates to a method of manufacturing a magnetic recording medium wherein the magnetic layer coating liquid comprising a ferromagnetic powder having an average particle size of 10 to 40 nm and a moisture content of 0.3 to 3.0 weight percent; a binder (a) comprising 0.2 to 0.7 meq/g of at least one polar group selected from the group consisting of —SO3M, —OSO3M, —PO(OM)2, —OPO(OM)2, and COOM (M denotes a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000, and/or (b) comprising 0.5 to 5 meq/g of at least one polar group selected from the group consisting of —CONR1R2, —NR1R2, and —NR+R1R2R3 (wherein R1, R2, and R3 each independently denote a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000; and a compound comprising at least one carboxyl group and/or hydroxyl group per molecule.
    Type: Application
    Filed: September 29, 2008
    Publication date: April 16, 2009
    Applicant: FUJIFILM Corporation
    Inventors: Tadahiro OOISHI, Kazufumi Omura, Hitoshi Noguchi, Hiroaki Takano
  • Patent number: 7514146
    Abstract: There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 ?=46.5° or 2?=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of ?=1.54 ? is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: April 7, 2009
    Assignees: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hitoshi Noguchi, Atsuhito Sawabe
  • Patent number: 7515383
    Abstract: Provided is a magnetic recording medium exhibiting good electromagnetic characteristics in high-density recording The magnetic recording medium employed for magnetically recording signals with a track width equal to or less than 2.0 ?m and reproducing the magnetically recorded signals, wherein said magnetic recording medium comprises a magnetic layer comprising a hexagonal ferrite ferromagnetic powder and a binder or comprises a nonmagnetic layer comprise a nonmagnetic powder and a binder and a magnetic layer comprising a hexagonal ferrite ferromagnetic powder and a binder in this order on a nonmagnetic support. Said magnetic layer has a thickness equal to or less than 0.2 ?m, and said hexagonal ferrite ferromagnetic powder has an average plate diameter being 1/30 or less of the magnetically recorded track width as well as ½ or less of the thickness of the magnetic layer.
    Type: Grant
    Filed: September 29, 2005
    Date of Patent: April 7, 2009
    Assignee: FUJIFILM Corporation
    Inventors: Shinji Saito, Hitoshi Noguchi, Nobuo Yamazaki
  • Publication number: 20090046396
    Abstract: The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mr?, of a residual magnetization Mr of the magnetic layer and a thickness ? of the magnetic layer is equal to or greater than 2 mT•?m and equal to or less than 12 mT•?m, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6.
    Type: Application
    Filed: March 30, 2007
    Publication date: February 19, 2009
    Applicant: FUJIFILM CORPORATION
    Inventors: Takeshi Nagata, Hitoshi Noguchi
  • Publication number: 20090027812
    Abstract: The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 ?m2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer, the spin-valve layer comprises a magnetization free layer, a magnetization pinned layer and an antiferromagnetic layer, and the antiferromagnetic layer is comprised of alloy comprising iridium and manganese, and the reproduction head comes in sliding contact with the magnetic recording medium during signal reproduction.
    Type: Application
    Filed: July 28, 2008
    Publication date: January 29, 2009
    Applicants: FUJIFILM Corporation, TDK Corporation
    Inventors: Hitoshi Noguchi, Yasushi Endo, Osamu Shimizu, Makoto Yoshida, Kazuhiko Maejima, Mitsuyoshi Kawai
  • Publication number: 20080297950
    Abstract: The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 ?m2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, and the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 4, 2008
    Applicant: FUJIFILM Corporation
    Inventors: Hitoshi NOGUCHI, Osamu SHIMIZU, Yasushi ENDO
  • Publication number: 20080282779
    Abstract: A fuel property sensor is provided with three bypass passages and a measure passage. The measure passage is located inside of a closed loop which is comprised of common tangential lines of adjacent bypass passages and a part of profile line of each bypass passage in a cross section perpendicular to the measure passage. Even if the fuel property sensor is rotated around the axis of a fuel pipe in assembling the fuel property sensor to the fuel pipe, at least one of two bypass passages is always located above the measure passage in a vertical direction. Hence, bubbles included in the fuel are restricted from flowing into the measure passage. The fuel property sensor can detect the concentration of ethanol contained in the fuel with high accuracy.
    Type: Application
    Filed: May 16, 2008
    Publication date: November 20, 2008
    Applicants: DENSO CORPORATION, NIPPON SOKEN, INC., TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hitoshi Noguchi, Rie Osaki, Hiroshi Nakamura, Hitoshi Uda, Yukihiro Tsukasaki, Hiroki Ichinose
  • Patent number: 7280446
    Abstract: There is provided an optical disk drive capable of appropriately effecting recording and reproducing operations without being affected by offset values and a laser output value, which are set at startup of the disk drive, even when changes have arisen in the internal temperature of the disk drive because of changes in ambient temperature. In an optical disk drive, a temperature sensor provided on a pickup measures a temperature. When changes in temperature are greater than a predetermined level, a focus offset value, a tracking offset value, and a value of laser output from the pickup are reset.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: October 9, 2007
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yoshihisa Suzuki, Sayoko Tanaka, Hitoshi Noguchi, Hiroki Ishida