Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

Abstract: This invention relates to electrophysiological assays that measure sodium conductance activity of a delta human epithelial sodium channel (ENaC) in the presence and absence of delta hENaC enhancers. Also, the invention generally relates to assays for identifying compounds that enhance the activity of delta hENaC, especially in an oocyte expression system. These compounds have potential application in modulating (enhancing) salty taste perception.

Abstract: A minimally invasive surgical device includes a main body, a buffer assembly and a cutter bit. The main body includes an inner tube and an outer tube, wherein the inner tube is disposed in the outer tube. An end of the buffer assembly is connected to the inner tube. The cutter bit is connected to another end of the buffer assembly, wherein the cutter bit has a cutting portion. When the cutting portion is in contact with an object, the buffer assembly is adapted to enable the cutter bit to move relatively to the inner tube to decrease a cutting force between the cutting portion and the object, and is adapted to enable the cutting portion to be tilted with a surface of the object.

Abstract: Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination structure is formed in the termination area and includes an array of termination cells formed in the termination area, the array of termination cells including a first termination cell at an interface to the active area to a last termination cell, each termination cell in the array of termination cells being formed in a mesa of the first semiconductor layer and having a first width; and an end termination cell being formed next to the last termination cell in the termination area, the end termination cell being formed in an end mesa of the first semiconductor layer and having a second width greater than the first width.

Abstract: Aspects of the present disclosure discloses a method for fabricating a trench MOSFET device comprising simultaneously forming a narrow trench and a wide trench into a semiconductor substrate using a mask to defines the narrow trench and the wide trench, forming an insulating layer over the semiconductor substrate with a first portion that fills up the narrow trench and a second portion that partially fills the wide trench, removing the second portion from the wide trench completely and leaving the narrow trench filled with the first portion, forming a gate electrode, forming a body region in a top portion of the semiconductor substrate, forming a source region in a portion of the body region, removing the first portion of nitride from the narrow trench, and forming a contact plug by filling a second conductive material in the narrow trench.

Abstract: In one aspect, the present invention relates to a mammalian cell-based high-throughput assay for the profiling and screening of human epithelial sodium channel (hENaC) cloned from a human kidney c-DNA library and is also expressed in other tissues including human taste tissue. The present invention further relates to amphibian oocyte-based medium-throughput electrophysiological assays for identifying human ENaC modulators, preferably ENaC enhancers. Compounds that modulate ENaC function in a cell-based ENaC assay are expected to affect salty taste in humans.

Abstract: A method of purifying crude sevoflurane comprising (i) providing crude sevoflurane and an aqueous base to a first centrifugal separator, wherein the crude sevoflurane comprises sevoflurane and hexafluoroisopropanol; (ii) mixing the crude sevoflurane and the aqueous base in the first centrifugal separator; and (iii) separating the sevoflurane from the aqueous base in the first centrifugal separator, thereby purifying the crude sevoflurane.

Abstract: A group III-V device structure is provided. The group III-V device structure includes a channel layer formed over a substrate and an active layer formed over the channel layer. The group III-V device structure also includes a gate structure formed over the active layer and a source electrode and a drain electrode formed over the active layer. The source electrode and the drain electrode are formed on opposite sides of the gate structure. The group III-V device structure further includes a through via structure formed through the channel layer, the active layer and a portion of the substrate, and the through via structure is electrically connected to the source electrode or the drain electrode.

Abstract: The present disclosure provides a film composed of a polymer mixture, wherein the polymer mixture includes: a hydrophobic composition including polycaprolactone (PCL); and at least one hydrophilic polymer selected from a group consisting of alginate, gelatin, hyaluronic acid, polyvinyl alcohol (PVA), carboxymethyl cellulose (CMC), polyethylene glycol (PEG), collagen, demineralized bone matrix (DBM), bone morphogenetic protein (BMP), albumin, chitosan, fibrin, polyoxyethylene, polyvinylpyrrolidone, wherein the weight ratio of the hydrophobic composition to the hydrophilic polymer is about 1:0.01-100, and wherein the film has the effect of preventing leakage from a surgical wound or a diffuse wound.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

Abstract: The present disclosure provides a film composed of a polymer mixture, wherein the polymer mixture includes: a hydrophobic composition including polycaprolactone (PCL); and at least one hydrophilic polymer selected from a group consisting of: alginate, gelatin, chitosan, hyaluronic acid, collagen, demineralized bone matrix (DSM), carboxymethyl cellulose (CMC), fibrin, polyoxyethylene, polyethylene glycol (PEG) and polyvinylpyrrolidone, wherein the weight ratio of the hydrophobic composition to the at least one hydrophilic polymer is about 1:0.01-100, and wherein the film has the effect of preventing leakage from a surgical wound or a diffuse wound.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

Abstract: Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination structure is formed in the termination area and includes an array of termination cells formed in the termination area, the array of termination cells including a first termination cell at an interface to the active area to a last termination cell, each termination cell in the array of termination cells being formed in a mesa of the first semiconductor layer and having a first width; and an end termination cell being formed next to the last termination cell in the termination area, the end termination cell being formed in an end mesa of the first semiconductor layer and having a second width greater than the first width.

Abstract: An active array matrix substrate of a display panel includes a number of scan lines parallel to each other and arranged in a first metal layer of a first substrate, a number of data lines parallel to each other and arranged in a second metal layer of the first substrate, a number of gate electrodes arranged in the first metal layer, a number of source electrodes arranged in the second metal layer, and a number of drain electrodes arranged in the second metal layer. The source electrode includes at least one source extending portion spaced from and configured to overlap with the first metal layer. The drain electrode includes at least one drain extending portion spaced from and configured to overlap with the first metal layer.

Abstract: Aspects of the present disclosure discloses a method for fabricating a trench MOSFET device comprising simultaneously forming a narrow trench and a wide trench into a semiconductor substrate using a mask to defines the narrow trench and the wide trench, forming an insulating layer over the semiconductor substrate with a first portion that fills up the narrow trench and a second portion that partially fills the wide trench, removing the second portion from the wide trench completely and leaving the narrow trench filled with the first portion, forming a gate electrode, forming a body region in a top portion of the semiconductor substrate, forming a source region in a portion of the body region, removing the first portion of nitride from the narrow trench, and forming a contact plug by filling a second conductive material in the narrow trench.

Abstract: Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer formed thereon and of the opposite conductivity type, and a first epitaxial layer formed on mesas of the second semiconductor layer. An electric field along a length of the first epitaxial layer is uniformly distributed.

Abstract: A cleaning cream containing PVA particles has PVA particles being uniformly dispersed in a cleaning cream. Moisture content of the cleaning cream is at the range of 0.1˜23%. The cleaning cream comprises a least a surfactant. The PVA particles has glycerol and PVA in which molecular weight of the PVA is 110,000˜120,000. The PVA particles remain as particle form in the cleaning cream.

Abstract: The disclosed invention relates generally to a method and device for transferring a file. In accordance with one embodiment, the method may include, receiving a file transfer request including information of a file and the file receiver; separating the file into multiple file segments; pushing the multiple file segments to the file receiver; if receiving a retransfer request sent by the file receiver, pushing the file segment assigned by the retransfer request to the file receiver; if receiving an acknowledgement sent by the file receiver, ending the file transferring, the acknowledgement indicating all of the multiple file segments being received by the file receiver. The method and device provided in the disclosed embodiments can transfer file more reliable.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.

Abstract: A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a first insulating layer separates the first conductive material from the substrate, a second insulating layer separates the second conductive material from the substrate and a third insulating material separates the first and second conductive materials. The other trenches contain part of the first conductive material in a half-U shape in lower portions and part of the second conductive material in upper portions. In the other trenches, the third insulating layer separates the first and second conductive materials. The first insulating layer is thicker than the third insulating layer, and the third insulating layer is thicker than the second.