Patents by Inventor Hong-Sik Park

Hong-Sik Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100127731
    Abstract: Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.
    Type: Application
    Filed: September 10, 2009
    Publication date: May 27, 2010
    Inventors: Jae-Yong Seo, Gu-Gwan Kang, Tae-Hun Kang, Hong-Sik Park, Jung-Hyeon Kim
  • Patent number: 7687838
    Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
    Type: Grant
    Filed: October 3, 2005
    Date of Patent: March 30, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, Ju-hwan Jung, Hyoung-soo Ko, Hong-sik Park, Dong-ki Min, Eun-sik Kim, Chul-min Park, Sung-dong Kim, Kyoung-lock Baeck
  • Patent number: 7659562
    Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: February 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyoung-soo Ko, Ju-hwan Jung, Yong-su Kim, Seung-bum Hong, Hong-sik Park
  • Patent number: 7605014
    Abstract: A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
    Type: Grant
    Filed: August 3, 2006
    Date of Patent: October 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20090213292
    Abstract: A flat panel display device includes a folded bezel formed in a multi-layer structure. The flat panel display device is formed so that an electronic component of a flexible printed circuit board may be inserted into at least one opening formed at a location where the layers of the bezel correspond to one another. Thus, the electronic component inserted into the opening of the bezel has improved durability against external interference and impact, and the number of components and the number of processes can be reduced.
    Type: Application
    Filed: January 12, 2009
    Publication date: August 27, 2009
    Inventors: Hong-Sik Park, Sang-Hyun Lee, Dong-Ho Kim
  • Patent number: 7566596
    Abstract: A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: July 28, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sik Park, Shi-Yul Kim, Jong-Hyun Choung, Won-Suk Shin
  • Patent number: 7528371
    Abstract: A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
    Type: Grant
    Filed: June 8, 2006
    Date of Patent: May 5, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyoung-soo Ko, Ju-hwan Jung, Seung-bum Hong, Hong-sik Park
  • Patent number: 7529119
    Abstract: A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: May 5, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-dong Kim, Eun-sik Kim, Ju-hwan Jung, Hyoung-soo Ko, Dong-ki Min, Hong-sik Park, Seung-bum Hong
  • Patent number: 7520998
    Abstract: A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
    Type: Grant
    Filed: November 13, 2006
    Date of Patent: April 21, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Seung-bum Hong, Jong-youp Shim
  • Patent number: 7464584
    Abstract: A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: December 16, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20080297041
    Abstract: An organic light emitting display device includes an organic light emitting display panel; a bezel including a lower surface and a plurality of side walls extending from edges of the lower surface, and receiving the display panel therein; and a protective window provided on the top of the bezel, wherein the bezel is provided with a first rib, and the protective window is provided with a groove coupled to the first rib.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 4, 2008
    Applicant: Samsung SDI Co., Ltd.
    Inventor: Hong-sik Park
  • Patent number: 7459809
    Abstract: An X-Y stage driver having a locking device and a data storage system having the X-Y stage driver. The X-Y stage driver includes an X-Y stage; a supporting unit that supports the X-Y stage and has elastic beams that support corners of the X-Y stage; a driving unit that drives the X-Y stage in a first direction and a second direction which is perpendicular to the first direction; a stiffener that prevents the X-Y stage from rotating; and a locking device that fixes the stiffener by an electrostatic force.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: December 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Jong-youp Shim, Seung-bum Hong, Dong-ki Min
  • Patent number: 7442571
    Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.
    Type: Grant
    Filed: September 27, 2006
    Date of Patent: October 28, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sik Park, Hyun-Jung Shin, Ju-Hwan Jung
  • Publication number: 20080225678
    Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
    Type: Application
    Filed: May 29, 2008
    Publication date: September 18, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-soo KO, Eun-sik Kim, Sung-dong Kim, Ju-hwan Jung, Hong-sik Park, Chul-min Park, Seung-bum Hong
  • Patent number: 7419843
    Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul-min Park, Hong-sik Park, Hyoung-soo Ko, Seung-bum Hong
  • Patent number: 7406020
    Abstract: A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: July 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-bum Hong, Sung-dong Kim, Ju-hwan Jung, Dong-ki Min, Hong-sik Park, Kyoung-lock Baeck, Chul-min Park, Yun-seok Kim
  • Publication number: 20080162639
    Abstract: Provided are a system and method for identifying a peer-to-peer (P2P) application service. The method includes the steps of: (a) collecting an Internet protocol (IP) packet and generating a flow; (b) identifying the P2P application service on the basis of a port number using the generated flow; (c) when the P2P application service is identified in step (b), verifying the identified application service; (d) when it is verified that the identification is not correct, or the P2P application service is not identified in step (b), identifying the P2P application service on the basis of a payload; (e) when the P2P application service is identified in step (d) or it is verified in step (c) that the identification is correct, generating a SET table using a flow of the identified P2P application service; and (f) identifying the P2P application service for a flow not identified in either step (b) or step (d) using the SET table.
    Type: Application
    Filed: April 24, 2007
    Publication date: July 3, 2008
    Applicant: Research and Industrial Cooperation Group
    Inventors: Dae Hee Kang, Young Tae Han, Hong Sik Park, Yeong Ro Lee, Sang Yong Ha, Chin Chul Kim, Yong Hyun Jo, Ji Yeon Yu
  • Publication number: 20080143005
    Abstract: The present invention relates to a method of producing carbon fiber reinforced ceramic matrix composites, the method of producing carbon fiber reinforced ceramic matrix composites according to the present invention is characterized in that the method comprises the steps of: producing a carbon fiber reinforced resin composite that is molded with a mixture in which carbon fibers and polymer precursors containing carbon are mixed; producing a carbon fiber reinforced carbon composite by depositing pyrolytic carbon during a rapid thermal gradient chemical vapor infiltration process while increasing the deposition speed in a direction from the inside to the outside by performing a thermal treatment on said carbon fiber reinforced resin composite at high temperature; and infiltrating liquid-phase silicon into the pores of said carbon fiber reinforced carbon composite.
    Type: Application
    Filed: May 27, 2005
    Publication date: June 19, 2008
    Applicant: DACC CO., Ltd.
    Inventors: Dong Won Lim, Hong Sik Park, Dae Hyun Cho, Hyun Kyu Shin
  • Publication number: 20080078239
    Abstract: A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip.
    Type: Application
    Filed: May 18, 2007
    Publication date: April 3, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Hyoung-soo KO, Ju-hwan JUNG, Seung-bum HONG, Hong-sik PARK, Chul-min PARK
  • Patent number: 7338831
    Abstract: Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask layer, annealing the first and second semiconductor electrode regions and diffusing the second impurities of the first and second semiconductor electrode regions to portions facing each other to form resistive regions lightly doped with the second impurities at the outer boundaries of the first and second semiconductor electrode regions, and patterning the mask layer in a predetermined shape and etching a portion of a top surface of the substrate not covered by the patterned mask layer to form a resistive tip.
    Type: Grant
    Filed: November 11, 2003
    Date of Patent: March 4, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sik Park, Ju-Hwan Jung, Seung-Bum Hong