Patents by Inventor Hong-Sik Park

Hong-Sik Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080030909
    Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
    Type: Application
    Filed: March 21, 2007
    Publication date: February 7, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-soo Ko, Ju-hwan Jung, Yong-su Kim, Seung-bum Hong, Hong-sik Park
  • Patent number: 7319224
    Abstract: Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.
    Type: Grant
    Filed: September 7, 2005
    Date of Patent: January 15, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Kyoung-lock Baeck, Ju-hwan Jung, Hyoung-soo Ko, Chul-min Park, Seung-bum Hong
  • Patent number: 7316072
    Abstract: An XY stage module, a storage system including the same and a method for facating the XY stage module are provided. The XY stage module includes: a base; an XY stage horizontally moving above the base in a first direction and a second direction that is orthogonal to the first direction; a supporting unit disposed at the base for elastically supporting the XY stage; a stiffener for preventing the XY stage from being rotated; and a position sensor having a movable comb-shaped structure disposed at one side of the stiffener and having at least one movable comb and a fixed comb-shaped structure fixed on the base and having at least one fixed comb meshed with the movable comb to be separated at a predetermined gap for measuring a movement of the XY stage in the first direction and the second direction.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: January 8, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-sik Park, Ju-hwan Jung, Seung-bum Hong, Dong-ki Min
  • Publication number: 20070211542
    Abstract: A multi-probe for writing data to and/or reading data from a recording medium. The multi-probe includes a plurality of probes. All of the probes are working probes for writing the data to and/or reading the data from the recording medium.
    Type: Application
    Filed: November 27, 2006
    Publication date: September 13, 2007
    Inventors: Hyoung-soo Ko, Seung-bum Hong, Dong-ki Min, Hong-sik Park
  • Publication number: 20070188199
    Abstract: An X-Y stage driver having a locking device and a data storage system having the X-Y stage driver. The X-Y stage driver includes an X-Y stage; a supporting unit that supports the X-Y stage and has elastic beams that support corners of the X-Y stage; a driving unit that drives the X-Y stage in a first direction and a second direction which is perpendicular to the first direction; a stiffener that prevents the X-Y stage from rotating; and a locking device that fixes the stiffener by an electrostatic force.
    Type: Application
    Filed: October 18, 2006
    Publication date: August 16, 2007
    Inventors: Hong-sik Park, Jong-youp Shim, Seung-bum Hong, Dong-ki Min
  • Publication number: 20070159193
    Abstract: An information reproducing apparatus and a method using a semiconductor probe are provided. The information reproducing apparatus includes a semiconductor probe including a semiconductor tip including a channel varying with an electric field generated by an information recording medium; a modulator applying a high frequency modulation signal to the semiconductor probe to form a modulation electric field so as to modulate an information signal induced by the electric field; a signal detector detecting a signal generated by the semiconductor probe; and a demodulator extracting the information signal modulated by the modulation electric field from the signal detected by the signal detector.
    Type: Application
    Filed: January 9, 2007
    Publication date: July 12, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-ki Min, Seung-bum Hong, Hong-sik Park
  • Publication number: 20070157479
    Abstract: An XY stage module, a storage system including the same and a method for fabricating the XY stage module are provided. The XY stage module includes: a base; an XY stage horizontally moving above the base in a first direction and a second direction that is orthogonal to the first direction; a supporting unit disposed at the base for elastically supporting the XY stage; a stiffener for preventing the XY stage from being rotated; and a position sensor having a movable comb-shaped structure disposed at one side of the stiffener and having at least one movable comb and a fixed comb-shaped structure fixed on the base and having at least one fixed comb meshed with the movable comb to be separated at a predetermined gap for measuring a movement of the XY stage in the first direction and the second direction.
    Type: Application
    Filed: October 12, 2006
    Publication date: July 12, 2007
    Inventors: Hong-sik Park, Ju-hwan Jung, Seung-bum Hong, Dong-ki Min
  • Publication number: 20070153430
    Abstract: A micro actuator having separated stages and a data storage apparatus employing the same are provided. The micro actuator includes: a supporting unit; stages that are elastically supported by the supporting unit, each stage having a mounting surface where a target driven body is mounted thereon, and arranged adjacent to each other; levers which are disposed between the stages, each lever having two ends respectively connected to adjacent stages, and which apply force to the adjacent stages so that when one of the stages is moved, an adjacent stage is moved in an opposite direction to a moving direction of the moved stage; and driving units which respectively provide a driving force to the stages.
    Type: Application
    Filed: December 4, 2006
    Publication date: July 5, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-sik Park, Seung-bum Hong, Dong-ki Min, Jong-youp Shim
  • Publication number: 20070137780
    Abstract: A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
    Type: Application
    Filed: November 13, 2006
    Publication date: June 21, 2007
    Inventors: Hong-sik Park, Seung-bum Hong, Jong-youp Shim
  • Patent number: 7202376
    Abstract: The present invention is related to a method of producing polycarbosilane by heating polydimethylsilane at low pressure within the range of 320˜450° C. using zeolite having the Si/Al or Si/B ratio of 1˜200 as catalyst. This invention uses a zeolite with the structure of ZSM-5, ZSM-11, ZSM-12, zeolite X and zeolite Y, which has the Si/Al or Si/B ratio of 1˜200, as catalyst. When polycarbosilane is produced using a specific zeolite as catalyst, Si/Al or Si/B ratio can be adjusted at any proportion, enabling acidity control of catalyst, and therefore the molecular weight of final products can be easily controlled and the product yield can be improved, compared to conventional solid acid catalysts.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: April 10, 2007
    Assignees: DACC Co., Ltd., Korea Institute of Ceramic Engineering & Technology
    Inventors: Hong Sik Park, Dong Won Lim, Kwang Soo Kim, Young Hee Kim, Doh Hyung Riu, Hyung Rae Kim, Dong Geun Shin, Soo Ryong Kim, Kyung Ja Kim, Hyun Kyu Shin, Dae Hyun Cho
  • Publication number: 20070042522
    Abstract: A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
    Type: Application
    Filed: August 3, 2006
    Publication date: February 22, 2007
    Inventors: Hong-sik Park, Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong
  • Publication number: 20070040116
    Abstract: A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
    Type: Application
    Filed: June 8, 2006
    Publication date: February 22, 2007
    Inventors: Hyoung-soo Ko, Ju-hwan Jung, Seung-bum Hong, Hong-sik Park
  • Publication number: 20070020938
    Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.
    Type: Application
    Filed: September 27, 2006
    Publication date: January 25, 2007
    Inventors: Hong-Sik Park, Hyun-Jung Shin, Ju-Hwan Jung
  • Patent number: 7141999
    Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.
    Type: Grant
    Filed: May 1, 2003
    Date of Patent: November 28, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sik Park, Hyun-Jung Shin, Ju-Hwan Jung
  • Patent number: 7142077
    Abstract: A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: November 28, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-lock Baeck, Jong-up Jun, Ju-hwan Jung, Seung-bum Hong, Dong-ki Min, Hong-sik Park
  • Publication number: 20060252172
    Abstract: Provided is a method of fabricating a semiconductor probe with a resistive tip. The method includes steps of forming a mask layer on a substrate doped with first impurities and forming first and second semiconductor electrode regions heavily doped with the second impurities on the substrate uncovered by the mask layer, annealing the first and second semiconductor electrode regions and diffusing the second impurities of the first and second semiconductor electrode regions to portions facing each other to form resistive regions lightly doped with the second impurities at the outer boundaries of the first and second semiconductor electrode regions, and patterning the mask layer in a predetermined shape and etching a portion of a top surface of the substrate not covered by the patterned mask layer to form a resistive tip.
    Type: Application
    Filed: November 11, 2003
    Publication date: November 9, 2006
    Inventors: Hong-Sik Park, Ju-Hwan Jung, Seung-Bum Hong
  • Patent number: 7104377
    Abstract: The present invention relates to a clutch for transmission power. The clutch for transmission power according to the present invention includes flywheel, clutch cover and clutch disk assembly positioning between the flywheel and the clutch cover; moreover, the clutch disk assembly includes a clutch facing having main body portion formed with a center hole in the middle thereof, and a contacting portion wherein one side thereof faces the friction pad at said flywheel side and the other side thereof faces the press plate of said clutch cover, and the portion facing each other between the friction pad and the press plate is made of carbon-carbon composition; a spline hub being overlapped with one side of the clutch facing wherein a spline groove is formed in the inner diameter thereof and a connecting means for connecting the clutch facing with the spline hub.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: September 12, 2006
    Assignee: DACC Co., Ltd.
    Inventors: Dae Hyun Cho, Hong Sik Park, Hyun Kyu Shin, Dong Won Lim, Kwang Soo Kim
  • Publication number: 20060175644
    Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
    Type: Application
    Filed: February 7, 2006
    Publication date: August 10, 2006
    Inventors: Hyoung-soo Ko, Eun-sik Kim, Sung-dong Kim, Ju-hwan Jung, Hong-sik Park, Chul-min Park, Seung-bum Hong
  • Publication number: 20060145806
    Abstract: A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.
    Type: Application
    Filed: December 30, 2005
    Publication date: July 6, 2006
    Inventors: Sung-dong Kim, Eun-sik Kim, Ju-hwan Jung, Hyoung-soo Ko, Dong-ki Min, Hong-sik Park, Seung-bum Hong
  • Publication number: 20060091437
    Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
    Type: Application
    Filed: October 3, 2005
    Publication date: May 4, 2006
    Inventors: Seung-bum Hong, Ju-hwan Jung, Hyoung-soo Ko, Hong-sik Park, Dong-ki Min, Eun-sik Kim, Chul-min Park, Sung-dong Kim, Kyoung-lock Baeck