Abstract: The present disclosure relates to a novel citrate synthase variant, a microorganism comprising the variant, and a method for producing L-amino acids using the microorganism.

Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: A switch apparatus, includes: a base module including a base case, and a moving magnet movably mounted in the base case; and a manipulation module including a manipulation case, and a first magnet fixedly mounted in the manipulation case, wherein the moving magnet moves between a hold position and a releasable position, the hold position refers to a position in which the manipulation module is held onto the base module as an attractive force acts between the moving magnet and the first magnet, and the releasable position refers to a position in which the manipulation module is releasable from the base module as a repulsive force acts between the moving magnet and the first magnet.

Abstract: The present application relates to a method of generating a downlink frame. The method of generating the downlink frame includes: generating a first short sequence and a second short sequence indicating cell group information; generating a first scrambling sequence and a second scrambling sequence determined by the primary synchronization signal; generating a third scrambling sequence determined by the first short sequence and a fourth scrambling sequence determined by the second short sequence; scrambling the short sequences with the respective scrambling sequences; and mapping the secondary synchronization signal that includes the first short sequence scrambled with the first scrambling sequence, the second short sequence scrambled with the second scrambling sequence and the third scrambling sequence, the second short sequence scrambled with the first scrambling sequence and the first short sequence scrambled by the second scrambling sequence and the fourth scrambling sequence to a frequency domain.

Abstract: The present invention relates to a VOC reduction system and a VOC reduction method that applies pulse type thermal energy to a catalyst to activate the catalyst and oxidizes and removes the VOC.

Abstract: An example method includes estimating, based on content to be displayed at a display of a mobile computing device at a future time, an amount of power to be used by the display at the future time; selecting, based on the estimated power level, a power converter of a plurality of power converters of the mobile computing device, each of the plurality of power converters optimized for a different output power range; and causing electrical power from the selected power converter to be supplied to the display at the future time.

Abstract: The quantum dot comprises a ligand which is a copolymer comprising a first repeating unit comprising at least one or more hole transporting functional groups and a second repeating unit comprising at least one or more photocrosslinking functional groups.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: A transmitter and a receiver are provided. The transmitter includes a processing unit configured to receive a clock signal and a data signal, set a value of a consecutive identical digit (CID) value related to the data signal and generate a modulation signal during a unit interval (UI) based on the data signal and the CID value, and a transmitter driver configured to output output signals having different voltage levels during the unit interval by receiving the modulation signal.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: A power management integrated circuit includes a buck converter that includes a first metal oxide semiconductor field effect transistor (MOSFET) having a first conductivity type and a second MOSFET having a second conductivity type. The first MOSFET includes transistor sets that are two-dimensionally arranged. Each transistor set includes source regions, drain regions, and gate electrodes between the source regions and the drain regions. Each source region and each drain region includes an impurity region having the first conductivity type, and each source region further includes segment regions having the second conductivity type. A first source region is spaced apart from a second source region in a first direction, and a number of the segment regions in the first source region is different from a number of the segment regions in the second source region.

Abstract: A die device for molding a plurality of semiconductor chips is provided. The die device includes a lower die including a moving plate that has a plurality of V-groove structures for suctioning a release film coated with a resin, and an upper die which descends to the lower die or ascends from the lower die, thereby closing/opening the dies. The upper die includes at least a plurality of suction vent units for suctioning a substrate on which the semiconductor chips are arranged, and the lower die includes a device for manually adjusting the tension of a spring that supports the moving plate.

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Abstract: The present disclosure relates to a non-contact type pile cutting apparatus using a waterjet, particularly to a pile cutting apparatus entering the inside for cutting a pile including: a body that has a pipe form and is put into an inside of the pile; a gripper unit that is provided at an outer side of the body and fixes the body to the pile when the pile cutting apparatus has reached a cutting position of the pile; a waterjet unit that is provided at one side of the body and fixed by the gripper unit, and then sprays an abrasive mixture in which an abrasive and a fluid are mixed, toward the pile in a high pressure; a rotation unit that rotates the waterjet unit around a central axis of the body; a feed line that feeds the abrasive mixture in which the fluid and the abrasive of a set ratio are mixed, to the waterjet unit from the outside; a feed unit that controls a feed pressure of the abrasive mixture fed through the feed line; and a nozzle driving unit that controls a position of the waterjet unit.

Abstract: The present disclosure relates to a stabbing system for installing an offshore jacket structure and an installation method for installing an offshore jacket structure using the same.

Abstract: A compound with enhanced etching resistance, gap-filling properties, and heat resistance includes a repeating unit represented by Formula 1.

Abstract: The present invention relates to a laundry dryer, and the laundry dryer comprises a steam part for supplying steam into a drum, and a water supply part for supplying water to the steam part, wherein the steam part includes: a steam generator; a steam nozzle for supplying steam into the drum; a steam pipe for connecting the steam generator and the steam nozzle; and an accumulator for separating condensate water from the steam flowing in the steam pipe, and thus prevents the condensate water from being generated in the steam pipe or the steam nozzle and falling into the drum.

Abstract: A laundry treating apparatus includes: a cabinet including a rear plate at a rear surface, a drum rotatably disposed inside the cabinet and configured to receive laundry, the drum including a drum rear surface facing the rear plate, and a driver coupled to the rear plate and connected to the drum. The rear plate includes: a driver mounting portion coupled to the driver, and an air flow portion surrounding the driver mounting portion, providing a flow space configured to receive air, and configured to move the air in the flow space toward the drum. The flow space is defined at a front surface of the rear plate, and the driver is coupled to a rear surface of the rear plate.

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.