Abstract: A sensor includes a first sensing element electronically sensitive to an analyte and to an interfering stimulus. The first sensing element provides a first electrical signal in response to a presence of the analyte and/or the interfering stimulus. The sensor also includes a second sensing element electronically sensitive to the analyte and to the interfering stimulus. The second sensing element provides a second electrical signal in response to the presence of the analyte and/or the interfering stimulus. A conductive link electrically connects the first sensing mechanism and the second sensing mechanism. An electrical property is measured within the sensor that is indicative of a concentration of the analyte based on the first electrical signal and the second electrical signal.

Abstract: A sensor includes a first sensing element electronically sensitive to an analyte and to an interfering stimulus. The first sensing element provides a first electrical signal in response to a presence of the analyte and/or the interfering stimulus. The sensor also includes a second sensing element electronically sensitive to the analyte and to the interfering stimulus. The second sensing element provides a second electrical signal in response to the presence of the analyte and/or the interfering stimulus. A conductive link electrically connects the first sensing mechanism and the second sensing mechanism. An electrical property is measured within the sensor that is indicative of a concentration of the analyte based on the first electrical signal and the second electrical signal.

Abstract: An electronic device includes a first field effect transistor that includes a first gate electrode, a first drain electrode, and a first source electrode; a second field effect transistor that includes a second gate electrode, a second drain electrode, and a second source electrode, the first and second gate electrodes being at least one of electrically connected or integral, and the first and second source electrodes being at least one of electrically connected or integral; an input electrode electrically connected to the first and second gate electrodes; and an output electrode electrically connected to the first and second source electrodes. The first field effect transistor also includes a first semiconductor material. The second field effect transistor further also incudes a second semiconductor material.

Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Abstract: Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

Abstract: The present invention provides devices and articles of manufacture comprising a low-voltage operable, highly sensitive, and selectively responsive polymer for the detection of nitroaromatic compounds, including explosives. Resistive devices were fabricated by simple spin-coating on flexible and transparent substrates as well as silicon substrates, and were stable under ambient temperature and oxygen levels before exposure to the nitroaromatics. After exposure to 2,4,6-trinitrotoluene (TNT), the devices showed increased conductance, even with pg quantities of TNT, accompanied by a confirming color change from colorless to deep red. The relative conductance increase per unit exposure is the highest yet reported for TNT. Aromatic anion salts, on the other hand, did not induce any electronic responses. Methods of making the articles and devices, and their use are also provided.

Abstract: Semiconductor apparatus comprising: a dielectric layer comprising a surface, a portion of the surface having exposed aromatic groups; and a polycrystalline semiconductor layer comprising an organic semiconductor composition overlying and in contact with the portion of the surface, the organic semiconductor composition comprising a compound comprising a chain-like moiety, the chain-like moiety comprising a conjugated thiophene or phenyl group and comprising alkyl chains at ends of the chain-like moiety. Devices comprising semiconductor apparatus, methods for making semiconductor apparatus, and methods for making devices.

Abstract: An electronic device includes a first field effect transistor that includes a first gate electrode, a first drain electrode, and a first source electrode; a second field effect transistor that includes a second gate electrode, a second drain electrode, and a second source electrode, the first and second gate electrodes being at least one of electrically connected or integral, and the first and second source electrodes being at least one of electrically connected or integral; an input electrode electrically connected to the first and second gate electrodes; and an output electrode electrically connected to the first and second source electrodes. The first field effect transistor also includes a first semiconductor material. The second field effect transistor further also incudes a second semiconductor material.

Abstract: An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation.

Abstract: Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Abstract: An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation.

Abstract: n-type organic semiconductors have a pyromellitic diimide structure and electronic or electro-optic devices include pyromellitic diimide compounds as organic semiconductors. Specific semiconductors include pyromellitic diimide compounds have sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the pyromellitic diimide structure by an alkylene or heteroalkylene linking group. An electronic or electro-optic device includes a first electrode, a second electrode space apart from the first electrode, and an organic semiconductor layer arranged between the first and second electrodes. The organic semiconductor layer comprises a pyromellitic diimide compound.

Abstract: Ladder-type oligo-p-phenylene containing donor-acceptor copolymers are disclosed. The ladder-type oligo-p-phenylene can be used as an electron donor unit in the disclosed copolymers to provide a deeper highest occupied molecular orbital (HOMO) level for obtaining polymeric solar cells having a higher open-circuit voltage. Particular electron-accepting units, e.g., a divalent fused-ring heterocyclic moiety selected from the group consisting of a substituted or unsubstituted benzothiadiazole, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted benzobisthiazole, and a substituted or unsubstituted naphthothiadiazole, can be used to tune the electronic band gaps of the polymers for a better light harvesting ability. The disclosed copolymers exhibit field-effect mobilities as high as 0.011 cm2/(V s).

Abstract: n-type organic semiconductors have a pyromellitic diimide structure and electronic or electro-optic devices include pyromellitic diimide compounds as organic semiconductors. Specific semiconductors include pyromellitic diimide compounds have sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the pyromellitic diimide structure by an alkylene or heteroalkylene linking group. An electronic or electro-optic device includes a first electrode, a second electrode space apart from the first electrode, and an organic semiconductor layer arranged between the first and second electrodes. The organic semiconductor layer comprises a pyromellitic diimide compound.

Abstract: Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Abstract: An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation.

Abstract: Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100 KHz, 500 KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Abstract: Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.

Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.