Abstract: An improved process for forming devices utilizing patterned organic semiconductor films is provided. The process involves treating a surface to selectively provide regions of greater affinity and lesser affinity for an organic semiconductor or an organic semiconductor solution. When the organic semiconductor, or solution comprising the semiconductor, is deposited on the treated surface, either the organic semiconductor or the organic semiconductor solution dewets from the lesser affinity regions or the resultant film adheres only weakly to the lesser affinity regions such that selective removal is readily performed. And even where such removal is not performed, the portions of the organic semiconductor film overlying the greater affinity regions exhibit higher mobility and better film continuity relative to the other portions of the film.

Abstract: The invention provides a device comprising an improved n-channel semiconducting film, the film formed from a fused-ring tetracarboxylic diimide compound which exhibits a field effect electron mobility greater than 0.001 cm2/Vs, advantageously greater than 0.03 cm2/Vs, in film form. Contemplated compounds include naphthalene 1,4,5,8, tetracarboxylic acid diimides, naphthalene 2,3,6,7 tetracarboxylic acid diimides, anthracene 2,3,6,7-tetracarboxylic acid diimides, and heterocyclic variants thereof. The n-channel compounds are capable of being significantly soluble in common organic solvents, allowing for solution deposition of active semiconductor films, and are also capable of possessing significant volatility, such that vapor phase deposition, where desired, is relatively facile. It is also possible for the compounds to display the desirably high n-channel mobilities and on/off ratios even when operated in air.

Abstract: High storage densities using a holographic system are achievable using a stratified medium while maintaining a relatively high selectivity upon reconstruction of the stored images. Such combination of high density and high selectivity is achievable by employing a stratified medium and a recording process where selectivity does not vary with recording thickness.

Abstract: An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm2, that exhibits a relatively high charge carrier mobility of at least about 10−4 cm2V−1s−1 room temperature.

Abstract: Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.

Abstract: An organic semiconductor film is fabricated by applying a solution containing an organic semiconductor material and a solvent to a substrate, e.g., by solution casting, and evaporating the solvent. The characteristics of the substrate surface, the organic semiconductor material, and the process parameters are selected to provide desirable nucleation and crystal growth. The resultant organic semiconductor film contains a large area, e.g., a continuous area greater than 1 cm2, that exhibits a relatively high charge carrier mobility of at least about 10−4 cm2V−s−1 at room temperature.

Abstract: The invention provides a device comprising an improved n-channel semiconducting film, the film formed from a fused-ring tetracarboxylic diimide compound which exhibits a field effect electron mobility greater than 0.001 cm2/Vs, advantageously greater than 0.03 cm2/Vs, in film form. Contemplated compounds include naphthalene 1,4,5,8 tetracarboxylic acid diimides, naphthalene 2,3,6,7 tetracarboxylic acid diimides, anthracene 2,3,6,7-tetracarboxylic acid diimides, and heterocyclic variants thereof. The n-channel compounds are capable of being significantly soluble in common organic solvents, allowing for solution deposition of active semiconductor films, and are also capable of possessing significant volatility, such that vapor phase deposition, where desired, is relatively facile. It is also possible for the compounds to display the desirably high n-channel mobilities and on/off ratios even when operated in air.

Abstract: The invention relates to use of a material containing a polymerizable monomer or oligomer, the material exhibiting desirable shrinkage compensation upon polymerization. The material contains an expansion agent having a cleaving moiety with the capacity to be cleaved or fragmented by a catalytic reaction, e.g., acid catalysis. The cleavage, by increasing the number of molecules in the material, causes expansion that compensates, at least in part, for shrinkage induced by polymerization of the monomer or oligomer. The expansion agent is capable of providing compensation such that no more than 0.4%, advantageously no more than 0.2%, volume shrinkage per molar concentration of polymerized monomer functional groups occurs, where such compensation is performed at relatively low temperatures of less than 40° C.

Abstract: A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.

Abstract: A thick holographic recording medium suitable for use in multiplex holography is prepared from a solution of a bi-functional oligomer and a mono-functional monomer. Precuring, possibly at the same radiation wavelength used for recording, cross-links the oligomer, thereby creating a host for the recording monomer.

Abstract: A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

Abstract: The invention relates to use of a material containing a polymerizable monomer or oligomer, the material exhibiting desirable shrinkage compensation upon polymerization. The material contains an expansion agent having a cleaving moiety with the capacity to be cleaved or fragmented by a catalytic reaction, e.g., acid catalysis. The cleavage, by increasing the number of molecules in the material, causes expansion that compensates, at least in part, for shrinkage induced by polymerization of the monomer or oligomer. The expansion agent is capable of providing compensation such that no more than 0.4%, advantageously no more than 0.2%, volume shrinkage per molar concentration of polymerized monomer functional groups occurs, where such compensation is performed at relatively low temperatures of less than 40.degree. C.

Abstract: The photorecording medium of the invention is formed by mixing a matrix precursor and a photoactive monomer, and curing the mixture to form the matrix in situ. The reaction by which the matrix precursor is polymerized during the cure is independent from the reaction by which the photoactive monomer is polymerized during writing of data. In addition, the matrix polymer and the polymer resulting from polymerization of the photoactive monomer are compatible with each other. Use of a matrix precursor and photoactive monomer that polymerize by independent reactions substantially prevents cross-reaction between the photoactive monomer and the matrix precursor during the cure and inhibition of subsequent monomer polymerization. Use of a matrix precursor and photoactive monomer that result in compatible polymers substantially avoids phase separation. And in situ formation allows fabrication of media with desirable thicknesses.

Abstract: Thin film transistors in which the active layer is a film of an organic semiconductor with a structure having two or three six-membered, fused aromatic rings with two five-membered, heterocyclic aromatic rings fused thereto. The five-membered rings are either substituted or unsubstituted. If substituted, the substituents are either alkyl or alkoxyalkyl with about two to about 18 carbon atoms. The organic semiconductor compound has a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. Thin film devices made of these materials have an on/off ratio of at least about 100.

Abstract: An optical fiber protected from degradation caused by corrosion from environmental fluids. The optical fiber includes a core-cladding assembly surrounded with a thin quasi metal oxide film (preferably .about.10 nm in depth). Over time, particularly under the influence of the elevated temperatures, the initially deposited reagents of the thin film oxidize or hydrolyze, removing the organic components, and bonding a quasi metal oxide film on the surface of the cladding. The resulting film significantly retards corrosion by blocking the environmental fluids from reacting with flaws in the cladding surface of the fiber, thus improving the mechanical performance and reliability of the optical fiber. In addition, the thin film protects the fiber against incidental abrasions.

Abstract: A thick holographic recording medium suitable for use in multiplex holography is prepared from a solution of a bi-functional oligomer and a mono-functional monomer. Precuring, possibly at the same radiation wavelength used for recording, cross-links the oligomer, thereby creating a host for the recording monomer.

Abstract: A novel resist composition is disclosed. The resist composition is used in a lithographic process for device fabrication. The resist composition contains a polymer with phosphorus ester moieties. These moieties make the resist composition suitable for use in a variety of lithographic processes for fabricating integrated circuits.

Abstract: Applicants have discovered that by heating cured polymer-coated fiber at temperatures of 100.degree. C. or more, they can enhance the fiber pullout strength by 25% or more. This postcure heating can advantageously be done off-line by placing loosely wound fiber in a heated oven. Alternatively the postcure heating can be done on-line by reel-to-reel passage of the fiber through a heated furnace. Preferred temperatures are in the range 100.degree. C.-300.degree. C.