Abstract: A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

Abstract: The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Abstract: The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Abstract: The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Abstract: A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.

Abstract: A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.

Abstract: The present invention is to provide a LED bulb assembly, which includes a LED body and two connecting legs, wherein the LED body made of only one material with a nipple-type appearance. The LED body includes a head and body, in which the head is a semi-ball connecting with side arcs and the body is a cylinder. In use of these, the light will be the true color of the lighting source.

Abstract: The invention relates to a bulb assembly including a bulb holder and a socket, wherein the holder is provided with an elastic rod having an inclined bottom end. The socket is provided with a side slot having a bottom. The holder can insert into the socket and let the inclined end expose from the slot to engage both firmly. When the inclined end is pressed and moved inward, an upward force can be produced to push the holder moving upward a distance for separating from the socket in ease.

Abstract: The invention relates to a bulb assembly including a bulb holder and a socket, wherein the holder is provided with an elastic rod having an inclined bottom end. The socket is provided with a side slot having a bottom. The holder can insert into the socket and let the inclined end expose from the slot to engage both firmly. When the inclined end is pressed and moved inward, an upward force can be produced to push the holder moving upward a distance for separating from the socket in ease.

Abstract: A light bulb holder is provided which relies on an inner lock type fastening construction to provide optimal securement. The light bulb holder includes a cap and a base. The base has a through groove formed through a lower section sidewall. A through base and axial opening are formed through the base. A slot is formed within the base sidewall and the cap has a tongue molded on the side of a stub of the cap. The cap is inserted in the base and axial openings of the base in a manner such that the stub and the tongue are accommodated in the axial hole and the slot respectively so that a protrusion portion of the tongue engages the base sidewall through the through groove thus firmly securing the cap to the base with an optimal locking effect.