Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region.

Abstract: An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region.

Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate including an isolation region and a device region is provided. An overall amorphization process is performed on the substrate to form an amorphous region. Here, a minimum depth of the amorphous region is greater than a maximum depth of at least one of the isolation region and the device region, and the amorphous region covers at least one of the isolation region and the device region. A thermal treatment is performed on the amorphous region.

Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: Described herein are magnetic neural stimulation systems for the treatment of neurological disorders. One variation of a magnetic neural stimulation system includes magnetic stimulators shaped as helical or ramped coils, where each turn of the coil has an acute turning angle of less than 90 degrees. Also described herein are magnetic neural stimulation systems that include an array of stimulators and one or more shielding components. The shielding components modulate the density profile of the induced eddy currents to increase stimulation to targeted neural tissue regions while decreasing stimulation to non-targeted neural regions. Other variations of magnetic stimulation systems include one or more stimulators and a shield in which some of the induced eddy currents in the shield may act to attenuate the magnetic field in certain regions of the shield.

Abstract: An electronic device includes a visual sensor and a display screen. The visual sensor senses whether a user is looking at the display screen. If the user is looking at the display screen, the electronic device adjusts a font size of a font being displayed on the display screen. If the user looks at the display screen for not less than a first predefined time, the electronic device prompts the user to have a rest and turn off the display screen. After the electronic device has been turned off for more than a second predefined time, the display screen is turned on again automatically.

Abstract: A method of detecting hepatocellular carcinoma includes the steps of: detecting a methylation level of a CpG site of HOXA9 gene in a biological sample taken from a suspected subject; and comparing the methylation level to a reference methylation level of a CpG site of HOXA9 gene in another biological sample taken from a normal subject not suffering from hepatocellular carcinoma, wherein when the methylation level is higher than the reference methylation level, the suspected subject is likely to suffer from hepatocellular carcinoma, and wherein each of the biological samples is selected from the group consisting of a blood sample, a serum sample, and a plasma sample.

Abstract: A method for incubating fruiting bodies of Antrodia cinnamomea is disclosed. The method comprises steps of: (a) obtaining a hymenium slice from a fruiting body of Antrodia cinnamomea; (b) transferring the hymenium slice to a selective culture medium for incubation to obtain an isolated strain; (c) transferring the isolated strain to a bagasse culture medium for incubation; (d) subjecting proliferation by liquid culture or solid culture to obtain large-scale liquid spawn or solid spawn; (e) inoculating a wood segment with the liquid spawn or the solid spawn and subjecting incubation; and (f) re-inoculating the wood segment with mixed single-spore colonies of Antrodia cinnamomea and subjecting incubation until fruiting bodies are produced.

Abstract: A method for incubating fruiting bodies of Antrodia cinnamomea is disclosed. The method comprises steps of: (a) obtaining a hymenium slice from a fruiting body of Antrodia cinnamomea; (b) transferring the hymenium slice to a selective culture medium for incubation to obtain an isolated strain; (c) transferring the isolated strain to a bagasse culture medium for incubation; (d) subjecting proliferation by liquid culture or solid culture to obtain large-scale liquid spawn or solid spawn; (e) inoculating a wood segment with the liquid spawn or the solid spawn and subjecting incubation; and (f) re-inoculating the wood segment with mixed single-spore colonies of Antrodia cinnamomea and subjecting incubation until fruiting bodies are produced.

Abstract: Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nanofibers are grown up in the pores of the template membrane. Next, by using the hollow first nanofibers as the secondary templates, second nanofibers are produced therein. Finally, the template membrane is removed to obtain composite nanofibers. Showing superior performance in weight energy density, current discharge efficiency and irreversible capacity, the composite nanofibers are applied to extensive scopes like thin-film battery, hydrogen storage, molecular sieving, biosensor and catalyst support in addition to applications in lithium batteries.

Abstract: Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nanofibers are grown up in the pores of the template membrane. Next, by using the hollow first nanofibers as the secondary templates, second nanofibers are produced therein. Finally, the template membrane is removed to obtain composite nanofibers. Showing superior performance in weight energy density, current discharge efficiency and irreversible capacity, the composite nanofibers are applied to extensive scopes like thin-film battery, hydrogen storage, molecular sieving, biosensor and catalyst support except applications in lithium batteries.

Abstract: A semiconductor fabrication method is provided for the fabrication of an isolation structure including, a shallow-trench isolation (STI) structure in an integrated circuit. This method is characterized by the increase in the thickness of the adhesive layer over that of the prior art and also in the use of thermal oxidation process to form the STI structure. The thick adhesive layer can thus resist the stress from thermal expansion of the various component layers in the integrated circuit during heat treatment. Moreover, the resulting STI structure is not formed with recessed edge portions since the hydrofluoric (HF) enchant acts on the silicon dioxide plug in the STI structure with substantially the same etching irate as on the adhesive layer. Moreover, this method includes no chemical-mechanical polish (CMP) process so the problem of scratches on the surface of the silicon dioxide plug as seen in the case of the prior art is avoided.

Abstract: A semiconductor fabrication method is provided for the fabrication of an isolation structure including a shallow-trench isolation (STI) structure in an integrated circuit. This method is characterized by the increase in the thickness of the adhesive layer over that of the prior art and also in the use of thermal oxidation process to form the STI structure. The thick adhesive layer can thus resist the stress from thermal expansion of the various component layers in the integrated circuit during heat treatment. Moreover, the resulting STI structure is not formed with recessed edge portions since the hydrofluoric (HF) etchant acts on the silicon dioxide plug in the STI structure with substantially the same etching rate as on the adhesive layer. Moreover, this method includes no chemical-mechanical polish (CMP) process, so the problem of scratches on the surface of the silicon dioxide plug as seen in the case of the prior art is avoided.

Abstract: A method of fabricating a capacitor. A crown-shape bottom storage node is formed on a conductive region. The crown-shape bottom storage node has a wavelike interior surface and a hemi-spherical grained exterior surface. A dielectric layer is formed on the bottom storage node, and a top electrode is formed to cover the dielectric layer.

Abstract: A method of fabricating a DRAM capacitor. A conductive layer and an amorphous silicon layer are formed on a substrate having a dielectric layer. The amorphous silicon layer and the conductive layer are etched to form a region of a capacitor to expose a portion of the dielectric layer. An opening with a profile having a wider upper portion and a narrower lower portion is formed within the conductive layer, and through the opening, the dielectric layer is then etched through to form a node contact window to expose the substrate. An amorphous silicon spacer is formed on the sidewall of conductive layer of the region of the capacitor and fills the node contact window. A selective HSG-Si, a dielectric layer and a polysilicon layer are formed to achieve the fabrication of the capacitor. The conductive layer, the amorphous silicon layer and the HSG-Si serve as a lower electrode of the capacitor and the polysilicon layer serves as an upper electrode of the capacitor.

Abstract: A triple well structure for an embedded dynamic random access memory uses an ion implantation performed on a portion of the first conductive type substrate between a second conductive type source and a second conductive type deep well. A first conductive type block region is formed between the second conductive type source and the second conductive type deep well.