Abstract: A standardized artificial intelligence automatic radiotherapy planning method includes acquiring a medical image; automatically delineating an ROI area of the medical image to acquire a geometric anatomical structure; determining a prescription according to disease type information corresponding to the medical image, the geometric anatomical structure, and a preset disease-prescription template library, and determining a radiation angle of radiation therapy; obtaining a radiation therapy dose distribution result using a dose prediction model; performing optimization processing using a reverse optimization algorithm based on dose distribution or DVH guidance, with reference to the radiation dose distribution result, to generate executable radiation therapy plans.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: An abrasive article including: a backing layer including a front fill overlying a backing, wherein the backing layer including the front fill comprises (1) a surface roughness of not greater than 100 microns or (2) an average thickness/roughness ratio of greater than 0.80; a make coat overlying the backing layer; and a plurality of abrasive particles overlying the backing layer, wherein at least 65% of the abrasive particles have a well-oriented tilt orientation.

Abstract: An abrasive article includes a backing; a make coat overlying the backing; and a plurality of abrasive particles overlying the backing and at least partially contained in the make coat; and a make coat thickness ratio (Tg/Ta) of not greater than 1.5, wherein Tg is the average thickness of the make coat at the sides of the abrasive particles and the Ta is the average thickness of the make coat.

Abstract: The present disclosure relates to the technical field of semiconductor integrated circuits and discloses a multi-mode array structure for in-memory computing, and a chip, including: an array of memory cells, function lines corresponding to all the memory cells measured by rows in the array of memory cells, and complementary function lines and bit lines BL corresponding to all the memory cells measured by columns in the array of memory cells. According to the present disclosure, the TCAM function and CNN and SNN operations are enabled; the multi-mode array for in-memory computing herein goes beyond the limits of the von Neumann architecture by integrating the multiple modes of storage and computation, achieving efficient operation and computation; in addition to solving the computing power problem, a new array mode is provided to promote the development of high-integration circuits.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: Methods and apparatus for correcting the gaze direction and the origin (entrance pupil) in gaze tracking systems. During enrollment after an eye model is obtained, the pose of the eye when looking at a target prompt is determined. This information is used to estimate the true visual axis of the eye. The visual axis may then be used to correct the point of view (PoV) with respect to the display during use. If a clip-on lens is present, a corrected gaze axis may be calculated based on the known optical characteristics and pose of the clip-on lens. A clip-on corrected entrance pupil may then be estimated by firing two or more virtual rays through the clip-on lens to determine the intersection between the rays and the corrected gaze axis.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A metasurface unit includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, and a third metal layer. The first metal layer includes a first dipole arm pair and a second dipole arm pair, the first dipole arm pair is disposed in a first direction, and the second dipole arm pair is disposed in a second direction perpendicular to the first direction. The second metal layer includes at least one of the following: metal unit structures arranged at an equal distance in a third direction, metal unit structures arranged at an equal distance in a fourth direction perpendicular to the third direction, and metal unit structures arranged at an equal distance in the third direction and the fourth direction. The third direction and the first direction or the second direction are parallel or have a first included angle.

Abstract: A circuit board assembly with a fully embedded photosensitive chip which does not require an increase in board width for the re-routing of wires around the photosensitive chip includes a circuit board and a reinforced plate at a lower elevation which is connected to the circuit board. The circuit board defines a through hole and a plurality of conductive lines. The conductive lines or the portion of them which are cut off by the location of the through hole accommodating the chip are repeated by connecting lines carried on the reinforced plate, the plurality of connecting lines connects to and continues the conductive lines which are cut off by the hole.

Abstract: A plasma activated biochar filter is provided. In another aspect, Fluorine-based reactive gas is used in a plasma reactor to activate biochar. A further aspect employs a substrate flocked with plasma activated biochar. Yet another aspect employs plasma activated and fluorinated biochar on a porous substrate to act as an oil-fluid separating filter.

Abstract: Provided are a light source module and a backlight display module. The light source module includes a flexible printed circuit board and a plurality of side-emitting LEDs. The flexible printed circuit board extends along a central axis. The plurality of side-emitting LEDs are sequentially arranged along the central axis and bonded to the flexible printed circuit board, and a light-emitting surface of one side-emitting LED of the plurality of side-emitting LEDs is perpendicular to a bonding surface of the flexible printed circuit board.

Abstract: A coated abrasive article includes a substrate and a plurality of abrasive particles overlying the substrate, and the plurality of abrasive particles including tapered abrasive particles having a taper fraction standard deviation of at least 0.025 and not greater than 0.090.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A simple and integrated imaging device for housing motor-switchable and laterally-moving filters between a camera-lens holder and an imaging chip comprises the switchable filters in a cavity and a switching mechanism, and a driving mechanism are also in the cavity. The imaging chip is carried by a flexible printed circuit board. The driving mechanism connected to the switching mechanism drives the switching mechanism to slide back and forth underneath the camera-lens holder, so that either the first or the second switchable filter covers a through hole allowing light to fall on the imaging chip. An electronic device including the imaging device is also disclosed.

Abstract: A camera module includes a circuit board, a lens assembly, and a first board. The circuit board includes a first surface, a second surface opposite to the first surface, a first sidewall, and a second sidewall opposite to the first sidewall. Each of the first sidewall and the second sidewall connects the first surface to the second surface. The lens assembly is disposed on the first surface. The first board is connected to the first sidewall. The first board is inclined or perpendicular to the first surface. The first board is disposed on a side of the lens assembly.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: The present invention discloses a wireless network detection apparatus. A storage circuit stores virtual wireless communication apparatus information. A wireless signal transmission circuit communicates using a wireless communication protocol. A processing circuit executes software or firmware executable commands to perform a wireless network detection method including the steps outlined below. Whether a wireless signal including non-predetermined electronic apparatus identification information being received is determined. When the wireless signal is received, an existence signal is broadcasted accordingly. A first-time pairing information that is transmitted from a non-predetermined electronic apparatus based on the existence signal is received to perform the first-time pairing and store the non-predetermined electronic apparatus identification information in the storage circuit.

Abstract: An air purification system has an air inlet far and an air outlet, with a conduit between the air inlet and the air outlet. Disposed within the conduit in the direction of air flow, there is included at least one ionizer creating a first air ionisation zone within which, in use, aerosols and/or airborne particles in incoming air are ionised become charged. In the conduit there is further a charge reduction stage creating a first charge reduction zone that includes a charge reduction device located across a flow path of the airflow, terminating the air ionisation zone, such that the wherein as charged aerosols and/or particles pass therethrough, and in passing through the charge reduction stage the charged aerosols and/or particles are attracted to the charge reduction stage and on contact with the charge reduction stage become at least partially discharged.