Abstract: An integrated circuit structure includes a power supply rail formed in a backside of a semiconductor wafer. The integrated circuit structure also includes a frontside BEOL wire layer connected to the power supply rail through a gate, wherein the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside BEOL wire layer. A method of forming an integrated circuit structure includes forming a power supply rail in a backside of a semiconductor wafer, forming a gate in the semiconductor wafer, and forming a frontside BEOL wire layer connected to the power supply rail through the gate. Again, the gate is of a type to be powered off by a power supply coupled through the gate from the power supply rail to the first frontside BEOL wire layer.

Abstract: A semiconductor device includes backside power rails located between N channel field effect transistor to N channel field effect transistor spaces, and between at least one P channel field effect transistor to P channel field effect transistor space; and backside local signal lines located between the backside power rails.

Abstract: A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

Abstract: A semiconductor structure comprises a first portion of an interconnect line comprising a first conducting line segment and a second conducting line segment separated by an isolating layer, and a second portion of the interconnect line comprising a third conducting line segment vertically stacked over at least a portion of the first conducting line segment and at least a portion of the second conducting line segment.

Abstract: A second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, and a magnetic tunnel junction (MTJ) stack aligned above the via. A first back end of line (BEOL) layer including a BEOL dielectric layer surrounding a BEOL metal layer, a second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, a magnetic tunnel junction (MTJ) stack aligned above the via. Forming a via dielectric layer as a second back end of line (BEOL) layer, an opening, a lower metal stud in the opening, a liner on the lower metal stud and on exposed side surfaces of the opening, an upper metal stud in remaining portions of the opening, and forming a magnetic tunnel junction (MTJ) stack aligned above.

Abstract: A method is presented forming a fully-aligned via (FAV) and airgaps within a semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A microelectronic structure including a plurality of electronic devices. A plurality of frontside contacts, where each of the plurality of frontside contacts is connected to a frontside of one of the plurality electronic devices, respectively. Each of the plurality of frontside contacts is a same first electric potential. A plurality of backside contacts, where the plurality of backside contacts is connected to a backside of one of the plurality of electronic devices, respectively. Each of the plurality of backside contacts is a same second electrical potential, where the first electrical potential is different than the second electrical potential.

Abstract: Embodiments of the present invention are directed to processing methods and resulting structures having hybrid backside dielectrics. In a non-limiting embodiment of the invention, a front end of line structure is formed and a back end of line structure is formed on a first surface of the front end of line structure. A backside power delivery network is formed on a second surface of the front end of line structure opposite the first surface. The backside power delivery network includes a first set of interconnect lines in a first metallization level, a second set of interconnect lines in the first metallization level, and a hybrid backside dielectric structure. The hybrid backside dielectric structure includes a first dielectric material and a second dielectric material. The first set of interconnect lines are embedded in the first dielectric material and the second set of interconnect lines are embedded in the second dielectric material.

Abstract: Devices and methods of forming the same include a first conductive line having a top surface at a first height above an underlying layer. A second conductive line, parallel to the first conductive line, has a second height above the underlying layer that is greater than the first height. A first interlayer dielectric layer, between the first conductive line and the second conductive line, has a top surface at a third height above the underlying layer that is greater than the first height and that is less than the second height.

Abstract: A dual structure buried rail includes an upper rail and a lower rail. The upper rail may be inset relative to the lower rail. In other words, the lower rail may be wider than the upper rail, and/or the lower rail may have a larger geometrical volume than the upper rail. The upper rail may be located at a boundary of, and/or directly next to, an active device region and the lower rail may extend directly underneath at least a portion of the active device region. The lower rail may extend the entire length of the upper rail. The dual structure buried rail may reduce buried rail resistance which may reduce voltage drop thereacross and provide for improved semiconductor device and/or active device region performance. The dual structure buried rail may provide power potential delivery, provide potential sinking, or the like, to one or more active device region(s).

Abstract: A semiconductor interconnect structure comprises a substrate, a plurality of metal lines disposed relative to the substrate and a plurality of first and second caps disposed on the metal lines wherein the first caps comprise a first dielectric material and the second caps comprise a second dielectric material different from the first dielectric material.

Abstract: The present invention discloses a receptor inhibitor of formula (I), a composition comprising the same and the usage thereof.

Abstract: An upright multipath antenna structure includes a base body, a first path antenna metal layer and a second path antenna metal layer. The base body includes a wiring section and a fixing section. The fixing section is connected to the wiring section. The first path antenna metal layer is arranged on the wiring section of the base body. The second path antenna metal layer is arranged on the wiring section of the base body and is electrically connected to the first path antenna metal layer. The base body includes a plurality of fixing columns. The fixing columns are arranged in the fixing section of the base body.

Abstract: A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface. An electronic device is integrated into the top surface of the semiconductor substrate. A conductive power rail is positioned intermediate the top surface and the bottom surface of the semiconductor substrate. The conductive power rail is configured to conduct power to the electronic device.

Abstract: Embodiments of the invention include providing interconnects with two-dimensional free zero line end enclosure. A first metal line is formed. A second metal line is connected by a via to the first metal line, the first metal line having a first end with a zero line extension in relation to the via in a first dimension, the second metal line having another first end with a zero line extension in relation to the via in a second dimension perpendicular to the first dimension.

Abstract: The semiconductor device includes a first metal layer, a second metal layer, a metal plane, a third dielectric layer and a fourth dielectric layer. The first metal layer comprises a first dielectric layer with a first plurality of signal track and a first plurality of power rails. The second metal layer comprises a second dielectric layer with a second plurality of signal tracks and a second plurality of power rails. The metal plane is between the first metal layer and the second metal layer. The third dielectric layer is between the first metal layer and the metal plane. The fourth dielectric layer is between the second metal layer and the metal plane.

Abstract: A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers. The skip-level through-silicon via structure can enable a greater design flexibility for power grid. The skip-level through-silicon via structure has a large size that provides lower through-silicon via resistance as compared with conventional through-silicon via structures.

Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first power plane electrically connected to a first plurality of via-to-backside power planes (VBPPs), a second power plane, and a plurality of pass through vias electrically connecting the second power plane to a second plurality of VBPPs, wherein the plurality of pass through vias pass through the first power plane.

Abstract: A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.