Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.

Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.

Abstract: The present invention relates to a low-thermal resistance pressing device for a socket, which mainly comprises a housing, an inner collar, a heat conductive pressing block, a bearing collar and a locking member. The locking member on the housing is used to lock the socket. The inner collar is threadedly engaged with the housing. The bearing collar is located between the inner collar and the heat conductive pressing block. In the case of rotating the inner collar in the housing, the bearing collar drives the heat conductive pressing block to move axially so as to exert an axial force to a device to be tested. Because the heat conductive pressing block protrudes from the upper and lower surfaces of the housing, one end thereof can be in contact with a temperature control module, and the other end thereof can be in contact with the device to be tested.

Abstract: A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

Abstract: The present invention relates to a low-thermal resistance pressing device for a socket, which mainly comprises a housing, an inner collar, a heat conductive pressing block, a bearing collar and a locking member. The locking member on the housing is used to lock the socket. The inner collar is threadedly engaged with the housing. The bearing collar is located between the inner collar and the heat conductive pressing block. In the case of rotating the inner collar in the housing, the bearing collar drives the heat conductive pressing block to move axially so as to exert an axial force to a device to be tested. Because the heat conductive pressing block protrudes from the upper and lower surfaces of the housing, one end thereof can be in contact with a temperature control module, and the other end thereof can be in contact with the device to be tested.

Abstract: The present invention relates to a chip-fixing device for a socket, which comprises a fixing base body and a movable stop. The socket is assembled in a socket-accommodating recess of the fixing base body. The movable stop is assembled in the fixing base body and controlled in such a manner that a stopper is moved between a first position and a second position, wherein the first position refers to a position where the stopper is located right above the socket, and the second position refers to a position where the stopper is not located right above the socket. Accordingly, the socket-accommodating recess can be used to install sockets of different sizes, and the movable stop can drive the stopper to restrict a chip from falling off the socket or drive the stopper to release the chip, depending on presence or absence of an external force.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing conformal removable sealant layers and hard masks in one operation using same etching chemistries.

Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.