Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: A display device includes: a substrate having a display area and a non-display area, wherein the non-display area is surrounded by the display area; a first conductive layer disposed on the substrate; a second conductive layer disposed on the substrate, wherein, corresponding to the display area, the second conductive layer and the first conductive layer cross from a top view; a first insulating layer disposed between the first conductive layer and the second conductive layer; a third conductive layer disposed on the substrate and corresponding to the non-display area; and a second insulating layer disposed between the second conductive layer and the third conductive layer, wherein, corresponding to the non-display area, the third conductive layer and the second conductive layer cross from the top view.

Abstract: A receiving end of an electronic device includes an analog front end (AFE) circuit, a phase detector (PD), and a calculation circuit. The AFE circuit receives an input signal and adjusts the phase of the input signal according to a phase control signal. The PD detects the phase of the input signal to generate a current phase value and a phase difference accumulated value, calculates a target phase value according to the phase difference accumulated value, and generates a first phase driving value according to the target phase value and the current phase value. The calculation circuit generates the phase control signal according to the first phase driving value and a phase threshold. After the calculation circuit generates the phase control signal, the phase detector generates a second phase driving value, and the calculation circuit updates the phase threshold according to the first and second phase driving values.

Abstract: A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.

Abstract: A display device includes: a substrate having a display area and non-display area; a first conductive layer disposed corresponding to the display area and comprising a first line segment, a second line segment and a third line segment parallel to the first line segment, wherein the first and second line segments are disposed at two sides of the non-display area; a third conductive layer disposed on the substrate and including a first connection line electrically connected to the first and second line segments, and a projection of the first connection line is overlapped with at least a portion of the third line segment; and a first insulating layer disposed between the first and third conductive layers and including a first through-hole and a second through-hole, and the third conductive layer is electrically connected to the first and second line segments via the first and the second through-holes, respectively.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a package. The method includes coupling a first package component to a second package component using a first set of conductive elements. A first polymer-comprising material is formed over the second package component and surrounding the first set of conductive elements. The first polymer-comprising material is cured to solidify the first polymer-comprising material. A part of the first polymer-comprising material is removed to expose an upper surface of the second package component. The second package component is coupled to a third package component using a second set of conductive elements that are formed onto the upper surface of the second package component.

Abstract: A semiconductor package includes a substrate. The semiconductor package further includes a plurality of metal pillars on a top surface of the substrate. The semiconductor package further includes a semiconductor component on the substrate, wherein the semiconductor component includes one or more dies, and the semiconductor component has a top surface. The semiconductor package further includes a mold compound encapsulating the plurality of metal pillars and the semiconductor component, wherein the mold compound has a top surface above the top surface of the semiconductor component. The semiconductor package further includes an interposer coupled to the plurality of metal pillars.

Abstract: A display device includes: a substrate having a display area and non-display area; a first conductive layer disposed on the substrate and corresponding to the display area; a second conductive layer disposed on the substrate and corresponding to the display area, wherein the first and second conductive layers cross from top view; a first insulating layer disposed between the first and second conductive layers; a third conductive layer disposed on the substrate, corresponding to the non-display area, and including a first connection line; and a second insulating layer disposed between the second and third conductive layers. The first connection line electrically connects to the first or second conductive layer. The result of a sheet impedance of the first connection line divided by a sheet impedance of the first or second conductive layer is greater than 0 and less than or equal to 10.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a seed layer to cover a first passivation layer over a semiconductor substrate. The method also includes forming a metal layer to partially cover the seed layer by using the seed layer as an electrode layer in a first plating process and forming a metal pillar bump over the metal layer by using the seed layer as an electrode layer in a second plating process. In addition, the method includes forming a second passivation layer over the metal layer, wherein the second passivation layer includes a protrusion portion extending from a top surface of the second passivation layer and surrounding the sidewall of the metal pillar bump.

Abstract: A method for manufacturing a liquid-crystal antenna device is provided. The method includes step (a) providing a first mother substrate. The first mother substrate includes a first region and a second region. The first region has a plurality of first sides. An extension line of at least one of the first sides divides the second region into a first part and a second part. The method also includes the following steps: (b) forming a first electrode layer on the first region and the second region, and (c) cutting the first mother substrate along the first sides of the first region.

Abstract: The electronic device includes a first substrate, a second substrate, a first support member, a planarization layer, and an alignment layer. The second substrate is opposite to the first substrate. The first support member is disposed in the peripheral region and located between the first substrate and the second substrate. The planarization layer is disposed on the first substrate and has a first portion and an opening. The first portion is disposed between the opening, and the first support member and the first portion are overlapped in a normal direction of the first substrate. The alignment layer is disposed on the planarization layer. The alignment layer on the first portion has a first thickness. The alignment layer in the opening has a second thickness. The first thickness is greater than or equal to zero and less than the second thickness.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A display device is provided. A first pixel is coupled to a first scan line and a first data line and includes a first light-transmitting area. A second pixel is coupled to a second scan line and a second data line and includes a second light-transmitting area. The size of the second pixel is equal to the size of the first pixel. The area of the second light-transmitting area is different from the area of the first light-transmitting area. A first color area overlaps the first pixel. When first light passes through the first light-transmitting area and the first color area, the first light has a first color. A second color area overlaps the second pixel. When second light passes through the second light-transmitting area and the second color area, the second light has a second color, which is the same as the first color.

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: An electronic device is provided. The electronic device includes a substrate, a driving circuit disposed on the substrate, an active region disposed on the substrate, and a wiring group disposed on the substrate and between the driving circuit and the active area. The wiring group includes a first conductive line and a second conductive line. The first conductive line has a first section and a second section electrically connected to the first section and disposed between the first section and the active region. The second conductive line includes a third section and a fourth section electrically connected to the third section and disposed between the third section and the active region. The first section and the second section are not the same layer. The first section and the fourth section are the same layer. The second section and the third section are the same layer.

Abstract: A method for manufacturing a liquid-crystal antenna device is provided. The method includes step (a) providing a first mother substrate. The first mother substrate includes a first region and a second region. The first region has a plurality of first sides. An extension line of at least one of the first sides divides the second region into a first part and a second part. The method also includes the following steps: (b) forming a first electrode layer on the first region and the second region, and (c) cutting the first mother substrate along the first sides of the first region.