Abstract: A display device includes a substrate, a plurality of scan lines and a plurality of data lines. The data lines respectively have a first segment that overlaps one of the scan lines and a second segment that is located between adjacent two of the scan lines. A first segment of a first data line and a first segment of a second data line are separated by a distance Wa. A first segment of a third data line and a first segment of a fourth data line are separated by a distance Wc. A second segment of the first data line and a second segment of the second data line are separated by a distance W1. A second segment of the third data line and a second segment of the fourth data line are separated by a distance W3. The distances Wa, Wc, W1 and W3 have a relationship (W1/Wa)?(W3/Wc).

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a protection layer encapsulating the semiconductor die. The chip package also includes a conductive structure in the protection layer and separated from the semiconductor die by the protection layer. The chip package further includes an interconnection structure over the conductive structure and the protection layer. The interconnection structure has a protruding portion between the conductive structure and the semiconductor die, and the protruding portion extends into the protection layer.

Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: A display device includes a display panel having a display region and a peripheral region. The display panel includes a substrate and a scan driving circuit. The scan driving circuit disposed on the substrate includes a plurality of scan driving blocks and a plurality of first conductive lines. The first conductive lines are respectively coupled to and disposed between adjacent scan driving blocks. The scan driving blocks are disposed corresponding to the peripheral region, and the first conductive lines are disposed corresponding to the display region and the peripheral region.

Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A display substrate is provided. The display substrate includes a first insulating layer disposed on a substrate, a second insulating layer disposed on the first insulating layer. In particular, the first insulating layer has a first opening and the second insulating layer has a second opening, wherein the first opening and the second opening are partially overlapped. Further, in a cross-sectional view, the first insulating layer corresponding to the first opening has two first bottom ends, and the second insulating layer corresponding to the second opening has two second bottom ends, a location of a first vertical central line between the two first bottom ends is different from a location of a second vertical central line between the two second bottom ends, and the first vertical central line and the second vertical central line are substantially parallel to a normal direction of the surface.

Abstract: An operating voltage switching device includes a first current mirror circuit generating a corresponding sensing current according to an input current; a comparator comparing a reference voltage with a voltage at a node of the first current mirror circuit to generate a comparison signal; a first power domain providing a first output current to an internal circuit according to the sensing current; a second power domain providing a second output current to the internal circuit according to the sensing current; and a power domain selecting circuit, which is coupled to the comparator, the first power domain and the second power domain, and selects to enable the first power domain or the second power domain according to the comparison signal; wherein the sensing current is not greater than the input current.

Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.

Abstract: A device comprises a first package component, and a first metal trace and a second metal trace on a top surface of the first package component. The device further includes a dielectric mask layer covering the top surface of the first package component, the first metal trace and the second metal trace, wherein the dielectric mask layer has an opening therein exposing the first metal trace. The device also includes a second package component and an interconnect formed on the second package component, the interconnect having a metal bump and a solder bump formed on the metal bump, wherein the solder bump contacts the first metal trace in the opening of the dielectric mask layer.

Abstract: A display device includes a display panel and display drivers disposed on the display panel. The distance between a first display driver and a second display driver of the display drivers is greater than the distance between a second display driver and a third display driver of the display drivers. The display panel includes a curved segment adjacent to an area between the first display driver and the second display driver.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming a mask coating over a carrier, coupling an integrated circuit die over the mask coating, and disposing a molding compound around the integrated circuit die. The method includes forming an interconnect structure over the integrated circuit die and the molding compound.

Abstract: Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes forming a dam structure on dies proximate edge regions of the dies. A molding material is disposed around the dies, and a top portion of the molding material and a top portion of the dam structure are removed.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A display device includes a display panel having a display region and a peripheral region. The display panel includes a substrate and a scan driving circuit. The scan driving circuit disposed on the substrate includes a plurality of scan driving blocks and a plurality of first conductive lines. The first conductive lines are respectively coupled to and disposed between adjacent scan driving blocks. The scan driving blocks are disposed corresponding to the peripheral region, and the first conductive lines are disposed corresponding to the display region and the peripheral region.

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: A display substrate is provided. The display substrate includes a first insulating layer disposed on a substrate, a second insulating layer disposed on the first insulating layer. In particular, the first insulating layer has a first opening and the second insulating layer has a second opening, wherein the first opening and the second opening are partially overlapped. Further, in a cross-sectional view, the first insulating layer corresponding to the first opening has two first bottom ends, and the second insulating layer corresponding to the second opening has two second bottom ends, a location of a first vertical central line between the two first bottom ends is different from a location of a second vertical central line between the two second bottom ends, and the first vertical central line and the second vertical central line are substantially parallel to a normal direction of the surface.

Abstract: A display device includes: a substrate having a display area and non-display area; a first conductive layer disposed on the substrate and corresponding to the display area; a second conductive layer disposed on the substrate and corresponding to the display area, wherein the first and second conductive layers cross from top view; a first insulating layer disposed between the first and second conductive layers; a third conductive layer disposed on the substrate, corresponding to the non-display area, and including a first connection line; and a second insulating layer disposed between the second and third conductive layers. The first connection line electrically connects to the first or second conductive layer. The result of a sheet impedance of the first connection line divided by a sheet impedance of the first or second conductive layer is greater than 0 and less than or equal to 10.