Abstract: The present application provides a new type of brushless high speed motor, in which the integrated shell and air duct are separately fixed to the outside of the inner hole column, the material of the air duct and the outer shell is BMC, and the material of the inner hole column is metal. The two parts are combined and configured to be made of different materials, which can effectively buffer and reduce the resonance point of the motor, and reduce the noise caused by the high speed rotation of the motor. In addition, the housing is configured as a split type, and the air duct and shell can be directly fixed outside the inner hole column by BMC injection molding, which reduces the processing technology, reduces the burr of the housing. A grounding post is provided on the outside of the stator package for grounding.

Abstract: A data processing method performed by a first device includes: generating, in response to first service data satisfying a data uploading condition, a first bit array corresponding to the first service data; encrypting the first bit array through a data key to obtain a ciphertext bit array, the data key being generated by a second device in a data intersection application run in a trusted execution environment of the second device; and transmitting the ciphertext bit array to a blockchain node for forwarding to a second device, for the second device to decrypt, in the data intersection application through the data key, the ciphertext bit array to obtain the first bit array.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Disclosed is a fast lock phase-locked loop circuit for avoiding cycle slip, which belongs to the technical field of integrated circuits. The fast lock phase-locked loop circuit includes a phase frequency detector, a charge pump, an intermediate stage circuit, a loop filter, a voltage-controlled oscillator and a frequency divider. The phase frequency detector, the charge pump, the intermediate stage circuit, the loop filter and the voltage-controlled oscillator are connected in sequence; an output OUT end of the voltage-controlled oscillator is connected with an input IN end of frequency divider, and an output OUT end of the frequency divider is connected with an input IN end of the phase frequency detector to form a feedback path. The output clock frequency of the VCO and the expected frequency, i.e., the reference clock frequency and the feedback clock frequency, are prevented from being too close when the loop is started.

Abstract: Disclosed is a zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronization, which belongs to the technical field of integrated circuits. The zero-delay phase-locked loop frequency synthesizer comprises: a phase frequency detector, a charge pump, a loop pass filter, a voltage control oscillator and a multi-stage synchronization divider, wherein the phase frequency detector, the charge pump, the loop pass filter and the voltage control oscillator are connected in sequence; an output OUT of the voltage control oscillator is connected to an input IN of the multi-stage synchronization divider; and an output OUT of the multi-stage synchronization divider is connected to an input IN of the phase frequency detector, so as to form a feedback path.

Abstract: Disclosed is a fast lock phase-locked loop circuit for avoiding cycle slip, which belongs to the technical field of integrated circuits. The fast lock phase-locked loop circuit includes a phase frequency detector, a charge pump, an intermediate stage circuit, a loop filter, a voltage-controlled oscillator and a frequency divider. The phase frequency detector, the charge pump, the intermediate stage circuit, the loop filter and the voltage-controlled oscillator are connected in sequence; an output OUT end of the voltage-controlled oscillator is connected with an input IN end of frequency divider, and an output OUT end of the frequency divider is connected with an input IN end of the phase frequency detector to form a feedback path. The output clock frequency of the VCO and the expected frequency, i.e., the reference clock frequency and the feedback clock frequency, are prevented from being too close when the loop is started. (FIG.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Disclosed is a zero-delay phase-locked loop frequency synthesizer based on multi-stage synchronization, which belongs to the technical field of integrated circuits. The zero-delay phase-locked loop frequency synthesizer comprises: a phase frequency detector, a charge pump, a loop pass filter, a voltage control oscillator and a multi-stage synchronization divider, wherein the phase frequency detector, the charge pump, the loop pass filter and the voltage control oscillator are connected in sequence; an output OUT of the voltage control oscillator is connected to an input IN of the multi-stage synchronization divider; and an output OUT of the multi-stage synchronization divider is connected to an input IN of the phase frequency detector, so as to form a feedback path.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: Method for manufacturing fluoro(hydro)carbon-substituted silicon or germanium quantum dots which comprises the steps of:—reacting a Zintl salt or intermetallic compound of post-transition metals or metalloids of silicon or germanium with a halogen-containing oxidizing agent to form halide-terminated silicon or germanium quantum dots,—reacting the halide-terminated silicon or germanium quantum dots with a fluoro(hydro)carbon agent selected from the group of metal-fluoro (hydro)carbon compounds of the formula MRq, wherein M is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, q is an integer which corresponds to the valence of the metal, and R is CFnHm-fluoro/hydro-carbon, wherein n is 1 or 2, m is 0 or 1, and the total of n and m is 2, wherein each R may be the same or different, metal-fluoro (hydro)carbon halide compounds of the formula NQaRp wherein N is a metal selected from Group 1, 2, 4, 11, 12, 13, or 14 of the periodic table of elements, Q is a halogen selected fr

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide and an emitter layer. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. The absorber or base layer has a grading in doping concentration from a first doping level closest to the emitter layer to a second doping level away from the emitter layer, the second doping level being greater than the first doping level.

Abstract: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Abstract: Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands.